IXFN32N100P

IXFN32N100P PolarTM Power MOSFET HiPerFETTM VDSS ID25 = = ≤ ≤ RDS(on) trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1000 V VGSS Continuous ± 30 V VGSM Transient ± 40 V ID25 TC = 25°C 27 A IDM TC = 25°C, pulse width limited by TJM 75 A IAR TC = 25°C 16 A EAS TC = 25°C 1.5 J dV/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 20 V/ns PD TC = 25°C 690 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 300 °C z 2500 3000 V~ V~ z 1.5/13 1.3/11.5 Nm/lb.in. Nm/lb.in. z 30 g TJ TL 1.6mm (0.062 in.) from case for 10s VISOL 50/60 Hz, RMS IISOL ≤ 1mA Md Mounting torque Terminal connection torque t = 1min t = 1s Weight 1000V 27A Ω 320mΩ 300ns S G S D G = Gate S = Source D = Drain Either Source terminal S can be used as the Source terminal or the Kelvin Source (gate return) terminal. Features z z z International standard package Encapsulating epoxy meets UL 94 V-0, flammability classification miniBLOC with Aluminium nitride isolation Fast recovery diode Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages z Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 3mA 1000 VGS(th) VDS = VGS, ID = 1mA 3.5 IGSS VGS = ± 30V, VDS = 0V IDSS VDS = VDSS VGS = 0V RDS(on) VGS = 10V, ID = 16A, Note 1 TJ = 125°C © 2008 IXYS CORPORATION, All rights reserved z z Easy to mount Space savings High power density V 6.5 V ± 200 nA 50 μA 2.5 mA Applications z z z z 320 mΩ z Switched-mode and resonant-mode power supplies DC-DC Converters Laser Drivers AC and DC motor controls Robotics and servo controls DS99880A(4/08) IXFN32N100P Symbol Test Conditions (TJ = 25°C unless otherwise specified) Characteristic Values Min. Typ. Max. gfs 13 VDS = 20V, ID = 16A, Note 1 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss RGi td(on) tr td(off) tf Gate input resistance Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 16A RG = 1Ω (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 16A Qgd 21 S 14.2 nF 815 pF 60 pF 1.50 Ω 50 ns 55 ns 76 ns 43 ns 225 nC 85 nC 94 nC RthJC 0.18 RthCS 0.05 Source-Drain Diode TJ = 25°C unless otherwise specified) IS VGS = 0V ISM VSD trr QRM IRM SOT-227B Outline °C/W °C/W Characteristic Values Min. Typ. Max. 32 A Repetitive, pulse width limited by TJM 128 A IF = IS, VGS = 0V, Note 1 1.5 V 300 ns IF = 16A, -di/dt = 100A/μs VR = 100V 2.2 μC 15 A Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFN32N100P Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 70 32 VGS = 15V 10V 28 60 24 50 ID - Amperes 9V ID - Amperes VGS = 15V 10V 20 16 8V 12 9V 40 30 8V 20 8 7V 4 10 0 7V 0 0 1 2 3 4 5 6 7 8 9 10 0 5 10 32 25 30 3.0 VGS = 15V 10V 9V 2.8 RDS(on) - Normalized 8V 20 16 12 VGS = 10V 2.6 24 ID - Amperes 20 Fig. 4. RDS(on) Normalized to ID = 16A Value vs. Junction Temperature Fig. 3. Output Characteristics @ 125ºC 28 15 VDS - Volts VDS - Volts 7V 8 2.4 2.2 I D = 32A 2.0 1.8 I D = 16A 1.6 1.4 1.2 1.0 0.8 4 6V 0.6 0 0.4 0 2 4 6 8 10 12 14 16 18 20 -50 22 -25 0 VDS - Volts 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to I D = 16A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 28 2.6 26 2.4 24 TJ = 125ºC 22 20 2 ID - Amperes RDS(on) - Normalized 2.2 VGS = 10V 1.8 15V - - - 1.6 1.4 18 16 14 12 10 8 6 1.2 4 1 2 TJ = 25ºC 0 0.8 0 5 10 15 20 25 30 35 40 ID - Amperes © 2008 IXYS CORPORATION, All rights reserved 45 50 55 60 65 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 IXFN32N100P Fig. 8. Transconductance 40 35 35 30 30 g f s - Siemens ID - Amperes Fig. 7. Input Admittance 40 25 TJ = 125ºC 25ºC - 40ºC 20 15 25 15 10 10 5 5 0 TJ = - 40ºC 25ºC 125ºC 20 0 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 0 5 10 15 VGS - Volts 20 25 30 35 40 ID - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 100 16 90 14 80 VDS = 500V I D = 16A I G = 10mA 12 VGS - Volts IS - Amperes 70 60 50 40 TJ = 125ºC 30 TJ = 25ºC 10 8 6 4 20 2 10 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0 50 VSD - Volts 100 150 200 250 300 QG - NanoCoulombs Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 100,000 1.000 f = 1 MHz 10,000 Z(th)JC - ºC / W Capacitance - PicoFarads Ciss Coss 1,000 Crss 100 10 0 5 10 15 20 25 30 35 40 VDS - Volts 0.100 0.010 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: F_32N100P(96)3-28-08-C Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.