IXFN32N120P

IXFN32N120P PolarTM HiPerFETTM Power MOSFET VDSS = 1200V ID25 = 32A Ω RDS(on) ≤ 310mΩ ≤ 300ns trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol miniBLOC E153432 Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ VGSS VGSM S 1200 1200 V V Continuous Transient ±30 ±40 V V ID25 IDM TC = 25°C TC = 25°C, Pulse Width Limited by TJM 32 100 A A IA TC = 25°C 16 A EAS TC = 25°C 2 J dv/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 20 V/ns PD TC = 25°C 1000 W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 °C °C 2500 3000 V~ V~ 1.5/13 1.3/11.5 Nm/lb.in. Nm/lb.in. 30 g TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s VISOL 50/60 Hz, RMS IISOL ≤ 1mA Md Mounting Torque Terminal Connection Torque t = 1 minute t = 1 second Weight G S D G = Gate S = Source D = Drain Either Source Terminal S can be used as the Source Terminal or the Kelvin Source ( Gate Return ) Terminal. Features z z z z z z z International Standard Package miniBLOC, with Aluminium Nitride Isolation Isolation Voltage 2500 V~ High Current Handling Capability Fast Intrinsic Diode Avalanche Rated Low RDS(on) HDMOSTM Process Advantages z Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) z Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 3mA 1200 VGS(th) VDS = VGS, ID = 1mA 3.5 IGSS VGS = ±30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 TJ = 125°C z V 6.5 V ±300 nA 50 5 μA mA Applications z z z 310 mΩ z z © 2010 IXYS Corporation, All Rights Reserved Easy to Mount Space Savings High Power Density High Voltage Switch-Mode and Resonant-ModePower Supplies High Voltage Pulse Power Applications High Voltage Discharge Circuits in Lasers Pulsers, Spark Igniters, RF Generators High Voltage DC-DC Converters High Voltage DC-AC Inverters DS99718H(03/10) IXFN32N120P Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 20V, ID = 0.5 • ID25, Note 1 17 28 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss RGi td(on) tr td(off) tf Gate input resistance Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 1Ω (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd SOT-227B (IXFN) Outline S 21 nF 1100 pF 77 pF 0.84 Ω 70 ns 62 ns 88 ns 58 ns 360 nC 130 nC 160 nC (M4 screws (4x) supplied) 0.125 °C/W RthJC RthCS °C/W 0.05 Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) IS VGS = 0V ISM VSD trr QRM IRM Note Characteristic Values Min. Typ. Max. 32 A Repetitive, Pulse Width Limited by TJM 128 A IF = IS, VGS = 0V, Note 1 1.5 V 300 ns IF = 20A, -di/dt = 100A/μs 1.9 15 VR= 100V, VGS = 0V μC A 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFN32N120P Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC 70 32 VGS = 10V 9V 28 24 50 8V 20 ID - Amperes ID - Amperes VGS = 10V 9V 60 16 12 40 8V 30 20 8 7V 10 4 0 7V 0 0 1 2 3 4 5 6 7 8 9 10 0 5 10 32 25 30 3.0 VGS = 10V 8V 28 VGS = 10V 2.6 R DS(on) - Normalized 24 ID - Amperes 20 Fig. 4. RDS(on) Normalized to ID = 16A Value vs. Junction Temperature Fig. 3. Output Characteristics T J = 125ºC 20 16 7V 12 8 2.2 I D = 32A 1.8 I D = 16A 1.4 1.0 0.6 6V 4 0 0.2 0 2 4 6 8 10 12 14 16 18 20 22 -50 -25 0 25 VDS - Volts 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 16A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 2.6 35 VGS = 10V 2.4 30 TJ = 125ºC 2.2 25 2.0 ID - Amperes R DS(on) - Normalized 15 VDS - Volts VDS - Volts 1.8 1.6 20 15 1.4 10 TJ = 25ºC 1.2 5 1.0 0.8 0 0 10 20 30 40 ID - Amperes © 2010 IXYS Corporation, All Rights Reserved 50 60 70 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 IXFN32N120P Fig. 8. Transconductance Fig. 7. Input Admittance 50 70 45 TJ = - 40ºC 60 40 50 30 TJ = 125ºC 25ºC - 40ºC 25 25ºC g f s - Siemens ID - Amperes 35 20 40 125ºC 30 15 20 10 10 5 0 0 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 0 9.0 5 10 15 20 VGS - Volts 25 30 35 40 45 50 400 450 500 ID - Amperes Fig. 10. Gate Charge Fig. 9. Forward Voltage Drop of Intrinsic Diode 100 16 90 14 VDS = 600V I D = 16A 80 I G = 10mA 12 VGS - Volts IS - Amperes 70 60 50 TJ = 125ºC 40 10 8 6 TJ = 25ºC 30 4 20 2 10 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0 50 100 150 VSD - Volts 200 250 300 350 QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area 100,000 1000 100 Ciss 10,000 25µs ID - Amperes Capacitance - PicoFarads RDS(on) Limit 1,000 Coss 100µs 10 1ms 1 10ms 100ms 100 TJ = 150ºC Tc = 25ºC Single Pulse 0.1 Crss f = 1 MHz 10 DC 0.01 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 10 100 1,000 VDS - Volts 10,000 IXFN32N120P Fig. 13. Maximum Transient Thermal Impedance 1.000 Fig. 13. Maximum Transient Thermal Impedance 0.300 Z(th)JC - ºC / W 0.100 0.010 0.001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2010 IXYS Corporation, All Rights Reserved IXYS REF: F_32N120P(99) 3-04-10-D Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.