IXFN32N60

IXFK 32N60 IXFK 36N60 IXFN 32N60 IXFN 36N60 Preliminary Data VDSS HiPerFETTM Power MOSFET ID25 RDS(on) t rr IXFK/FN 36N60 600V 36A IXFK/FN 32N60 600V 32A 0.18Ω 0.25Ω 250ns 250ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr TO-264 AA (IXFK) Symbol Test Conditions VDSS TJ = 25°C to 150°C 600 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 600 600 V V GS VGSM Continuous Transient I D25 TC = 25°C, Chip capability Maximum Ratings IXFK IXFN I DM TC = 25°C, pulse width limited by TJM IAR TC = 25°C EAR TC = 25°C dv/dt I S ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω PD ±20 ±30 ±20 ±30 V V 32N60 32 36N60 36 32N60 128 36N60 144 20 32 36 128 144 20 A A A A A TC = 25°C TJ 30 30 mJ 5 5 V/ns 500 520 W -55 ... +150 °C 150 °C -55 ... +150 °C 300 - °C - 2500 3000 V~ V~ 0.9/6 1.5/13 - 1.5/13 Nm/lb.in. Nm/lb.in. TJM Tstg TL 1.6 mm (0.063 in) from case for 10 s VISOL 50/60 Hz, RMSt = 1 min IISOL ≤ 1 mAt = 1 s Md Mounting torque Terminal connection torque Weight 10 Symbol Test Conditions VDSS VGS = 0 V, ID = 1 mA 600 VDS = VGS, ID = 8 mA 2 I GSS VGS = ±20 VDC, VDS = 0 IDSS VDS = 0.8 VDSS VGS = 0 V TJ = 25°C TJ = 125°C VGS = 10 V, ID = 0.5 ID25 36N60 Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % 32N60 IXYS reserves ©1996 IXYS Corporation. the right to change All rights limits, reserved. test conditions, and dimensions. IXYS Corporation 3540 Bassett Street, Santa Clara,CA 95054 Tel: 408-982-0700 Fax: 408-496-0670 g Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. VGH(th) RDS(on) 30 V 4.5 V ±200 nA 400 2 µA mA 0.18 0.25 Ω Ω G D D (TAB) S miniBLOC, SOT-227 B (IXFN) E153432 S G S D G = Gate S = Source D = Drain TAB = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source Features • International standard packages • JEDEC TO-264 AA, epoxy meet UL 94 V-0, flammability classification • miniBLOC with Aluminium nitride isolation • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance • Fast intrinsic Rectifier Applications • DC-DC converters • Synchronous rectification • Battery chargers • Switched-mode and resonant-mode power supplies • DC choppers • Temperature and lighting controls • Low voltage relays Advantages Easy to mount • Space savings • High power density • 92807G (01/96) IXYS Semiconductor Edisonstr. 15, D-68623 Lampertheim, Germany Tel: +49-6206-5030 Fax: +49-6206-503629 IXFK 32N60 IXFK 36N60 Symbol Test Conditions gfs V DS = 10 V; ID = 0.5 ID25, pulse test S 9000 pF 840 pF Crss 280 pF td(on) 30 ns Ciss VGS = 0 V, VDS = 25 V, f = 1 MHz tr VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 td(off) RG = 1 Ω (External), tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgd RthJC TO-264 AA RthCK TO-264 AA RthJC miniBLOC, SOT-227 B RthCK miniBLOC, SOT-227 B Source-Drain Diode TO-264 AA Outline Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 36 Coss IXFN 32N60 IXFN 36N60 45 ns 100 ns 60 ns 325 nC 60 nC 120 nC 0.25 0.15 Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T K/W K/W 0.24 0.05 K/W K/W Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS IS VGS = 0 VGS = 0 36N60 32N60 36 32 A A I SM Repetitive; pulse width limited by TJM 36N60 32N60 144 128 A A VSD IF = IS A, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 1.5 V t rr I RM IF = IS, -di/dt = 100 A/µs, VR = 100 V 250 ns A 20 Millimeter Min. Max. 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 Inches Min. Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 miniBLOC, SOT-227 B M4 screws (4x) supplied Dim. Millimeter Min. Max. Inches Min. Max. A B C D E F G H 31.50 7.80 4.09 4.09 4.09 14.91 30.12 38.00 31.88 8.20 4.29 4.29 4.29 15.11 30.30 38.23 1.240 0.307 0.161 0.161 0.161 0.587 1.186 1.496 1.255 0.323 0.169 0.169 0.169 0.595 1.193 1.505 J K 11.68 8.92 12.22 9.60 0.460 0.351 0.481 0.378 L M N O P Q R S 0.76 12.60 25.15 1.98 4.95 26.54 3.94 4.72 0.84 12.85 25.42 2.13 5.97 26.90 4.42 4.85 0.030 0.496 0.990 0.078 0.195 1.045 0.155 0.186 0.033 0.506 1.001 0.084 0.235 1.059 0.174 0.191 T U 24.59 -0.05 25.07 0.1 0.968 -0.002 0.987 0.004 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 4,850,072 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 IXFK 32N60 IXFK 36N60 IXFN 32N60 IXFN 36N60 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS Corporation 3540 Bassett Street, Santa Clara,CA 95054 Tel: 408-982-0700 Fax: 408-496-0670 IXYS Semiconductor Edisonstr. 15, D-68623 Lampertheim, Germany Tel: +49-6206-5030 Fax: +49-6206-503629 IXFK 32N60 IXFK 36N60 IXFN 32N60 IXFN 36N60 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 4,850,072 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025