Advanced Technical Information
IXFN 340N06
HiPerFETTM
Power MOSFETs
Single Die MOSFET
D
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low trr
trr £ 250 ns
G
S
S
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ = 25°C to 150°C
60
V
VDGR
TJ = 25°C to 150°C; RGS = 1 MW
60
V
VGS
Continuous
±20
V
VGSM
Transient
±30
V
ID25
IL(RMS)
TC = 25°C, Chip capability
Terminal current limit
340
100
A
A
IDM
IAR
TC = 25°C, pulse width limited by TJM
TC = 25°C
1360
200
A
A
EAR
TC = 25°C
64
mJ
EAS
TC = 25°C
4
J
dv/dt
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS,
TJ £ 150°C, RG = 2 W
5
V/ns
PD
TC = 25°C
700
W
TJ
TJM
-55 ... +150
150
°C
°C
Tstg
-55 ... +150
°C
2500
3000
V~
V~
VISOL
50/60 Hz, RMS
IISOL £ 1 mA
Md
Mounting torque
Terminal connection torque
VDSS =
60 V
ID25
= 340 A
3 mW
RDS(on) =
t = 1 min
t=1s
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
Weight
30
g
miniBLOC, SOT-227 B (IXFN)
E153432
S
G
S
D
G = Gate
S = Source
D = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
International standard packages
miniBLOC, with Aluminium nitride
isolation
Low RDS (on) HDMOSTM process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
Fast intrinsic Rectifier
Applications
Symbol
Test Conditions
VDSS
V GS = 0 V, ID = 3 mA
60
VGH(th)
V DS = VGS, ID = 8 mA
2.0
IGSS
V GS = ±20 VDC, VDS = 0
IDSS
V DS = VDSS
V GS = 0 V
RDS(on)
V GS = 10 V, ID = 100A
Pulse test, t £ 300 ms,
duty cycle d £ 2 %
© 2000 IXYS All rights reserved
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
TJ = 25°C
TJ = 125°C
V
4.0
V
±200
nA
100
2
mA
mA
3
mW
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
Advantages
Easy to mount
Space savings
High power density
98751 (10/00)
IXFN 340N06
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min.
typ. max.
gfs
VDS = 10 V; ID = 60A, pulse test
80
Ciss
Coss
105
S
16800
pF
8200
pF
5000
pF
140
ns
95
ns
200
ns
33
ns
VGS = 0 V, VDS = 25 V, f = 1 MHz
Crss
td(on)
tr
VGS = 10 V, VDS = 0.5 VDSS, ID = 100A
td(off)
RG
= 2 W (External),
tf
Qg(on)
Qgs
VGS = 10 V, VDS = 50V, ID = 100A
Qgd
600
nC
110
nC
300
nC
RthJC
0.18
RthCK
K/W
0.05
Source-Drain Diode
K/W
miniBLOC, SOT-227 B
M4 screws (4x) supplied
Dim.
Millimeter
Min.
Max.
Inches
Min.
Max.
A
B
31.50
7.80
31.88
8.20
1.240
0.307
1.255
0.323
C
D
4.09
4.09
4.29
4.29
0.161
0.161
0.169
0.169
E
F
4.09
14.91
4.29
15.11
0.161
0.587
0.169
0.595
G
H
30.12
38.00
30.30
38.23
1.186
1.496
1.193
1.505
J
K
11.68
8.92
12.22
9.60
0.460
0.351
0.481
0.378
L
M
0.76
12.60
0.84
12.85
0.030
0.496
0.033
0.506
N
O
25.15
1.98
25.42
2.13
0.990
0.078
1.001
0.084
P
Q
4.95
26.54
5.97
26.90
0.195
1.045
0.235
1.059
R
S
3.94
4.72
4.42
4.85
0.155
0.186
0.174
0.191
T
U
24.59
-0.05
25.07
0.1
0.968
-0.002
0.987
0.004
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
Test Conditions
IS
VGS = 0 V
ISM
Repetitive;
pulse width limited by TJM
VSD
I F = 100A, VGS = 0 V,
Pulse test, t £ 300 ms, duty cycle d £ 2 %
t rr
QRM
IRM
I F = 50A, -di/dt = 100 A/ms, VR = 40V; TJ =25°C
1.4
8
340
A
1360
A
1.2
V
250
ns
mC
A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
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