IXFN340N07

HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 340N07 VDSS ID25 RDS(on) = 70 V = 340 A Ω = 4 mΩ trr ≤ 200 ns D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G S S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 70 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 70 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 IL(RMS) TC = 25°C, Chip capability Terminal current limit 340 100 A A IDM IAR TC = 25°C, pulse width limited by TJM TC = 25°C 1360 200 A A EAR TC = 25°C 64 mJ EAS TC = 25°C 4 J dv/dt IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω 10 V/ns PD TC = 25°C 700 W TJ TJM -55 ... +150 150 °C °C Tstg -55 ... +150 °C 2500 3000 V~ V~ VISOL 50/60 Hz, RMS IISOL ≤ 1 mA Md Mounting torque Terminal connection torque t = 1 min t=1s S G 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. Weight miniBLOC, SOT-227 B (IXFN) E153432 30 g S D G = Gate S = Source D = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source Features • International standard package • miniBLOC, with Aluminium nitride isolation • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance • Fast intrinsic Rectifier Applications Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VDSS VGS = 0 V, ID = 3 mA 70 VGH(th) VDS = VGS, ID = 8 mA 2.0 IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) V GS = 10 V, ID = 100A Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 % © 2004 IXYS All rights reserved TJ = 25°C TJ = 125°C V 4.0 V ±200 nA 100 2 μA mA 4 mΩ • DC-DC converters • Battery chargers • Switched-mode and resonant-mode power supplies • DC choppers • Temperature and lighting controls • Linear current regulators Advantages • Easy to mount • Space savings • High power density DS98547D(05/04) IXFN 340N07 Symbol gfs Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VDS = 10 V; ID = 60A, pulse test 80 Ciss Coss 98 S 12200 pF 7100 pF Crss VGS = 0 V, VDS = 25 V, f = 1 MHz 3340 pF td(on) 100 ns 95 ns 200 ns 33 ns tr VGS = 10 V, VDS = 0.5 • VDSS, ID = 100A td(off) RG = 1 Ω (External) M4 screws (4x) supplied Dim. tf Qg(on) Qgs miniBLOC, SOT-227 B VGS = 10 V, VDS = 50 V, ID = 100A Qgd 490 nC 72 nC 266 nC RthJC 0.18 RthCK 0.05 Source-Drain Diode K/W K/W Millimeter Min. Max. Inches Min. Max. A B 31.50 7.80 31.88 8.20 1.240 0.307 1.255 0.323 C D 4.09 4.09 4.29 4.29 0.161 0.161 0.169 0.169 E F 4.09 14.91 4.29 15.11 0.161 0.587 0.169 0.595 G H 30.12 38.00 30.30 38.23 1.186 1.496 1.193 1.505 J K 11.68 8.92 12.22 9.60 0.460 0.351 0.481 0.378 L M 0.76 12.60 0.84 12.85 0.030 0.496 0.033 0.506 N O 25.15 1.98 25.42 2.13 0.990 0.078 1.001 0.084 P Q 4.95 26.54 5.97 26.90 0.195 1.045 0.235 1.059 R S 3.94 4.72 4.42 4.85 0.155 0.186 0.174 0.191 T U 24.59 -0.05 25.07 0.1 0.968 -0.002 0.987 0.004 Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions IS VGS = 0 V ISM Repetitive; pulse width limited by TJM VSD IF = 100A, VGS = 0 V, Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 % trr QRM IRM IF = 50A, -di/dt = 100 A/μs, VR = 50V TJ = 25°C 100 1.4 8 340 A 1360 A 1.2 V 200 ns μC A IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,306,728 B1 6,534,343 6,259,123 B1 6,404,065 B1 6,583,505 6,683,344 6,710,405B2 IXFN 340N07 Fig. 1. Output Characteristics @ 25 Deg. C Fig. 2. Output Characteristics @ 125 Deg. C 240 240 VGS=10V 9V 8V 7V 160 6V 120 5V 80 160 0 0 0.6 0.9 V DS - Volts 1.2 5V 80 40 0.3 0 1.5 5 1.6 RDS(ON) - Normalized 1.8 RDS(ON) - Ohm 4.5 ID=200A 3.5 ID=100A 1.2 1.6 2 1.4 1.2 ID=200A 1 ID=100A 0.8 2.5 2 -50 0.6 -25 0 25 50 75 100 125 150 -50 -25 TJ - Degrees Centigrade 0 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 6. Temperature dependence of Breakdown & Threshold Voltage Fig. 5. RDS(ON) Normalized to I L(RMS) Value vs. I D 1.2 BVDSS & VGS(TH) - Normalized 1.6 TJ=125 °C 1.5 RDS(ON) - Normalized 0.8 Fig. 4. RDS(ON) Normalized to I L(RMS) Value vs. Junction Temperature 5.5 3 0.4 VDS - Volts Fig. 3. Temperature Dependence of RDS(ON) 4 6V 120 40 0 VGS=10V 9V 8V 7V 200 ID - Amperes ID - Amperes 200 1.4 1.3 1.2 1.1 TJ=25 °C 1 VGS(TH) BVDSS 1.1 1 0.9 0.8 0.7 0.9 0 50 100 150 ID - Amperes © 2004 IXYS All rights reserved 200 250 -50 -25 0 25 50 75 100 125 150 TJ - Degrees Centigrade IXFN 340N07 Fig. 8. Transconductance Fig. 7. Input Admittance 180 250 150 GFS - Siemens ID - Amperes 200 150 TJ= -40 °C 100 25 °C 120 90 60 125 °C 50 TJ=25° 30 0 0 2.5 3 3.5 4 4.5 5 5.5 6 0 40 VGS - Volts 200 240 Fig. 10. Gate Charge -240 10 -200 8 VDS=50V -160 -120 V GS - Volts IS - Amperes Fig. 9. Source Current vs. Source-ToDrain Voltage 80 120 160 ID - Amperes TJ=125 °C -80 TJ=25°C 6 4 2 -40 0 -0.4 ID=100A IG=10mA 0 -0.5 -0.6 -0.7 -0.8 -0.9 0 -1 VSD - Volts 100 200 300 400 500 QG - nanoCoulom bs Fig. 11. Capacitance Fig. 12. Transient Thermal Resistance 1 100000 R(TH)JC - (ºC/W) Capacitance - pF f=100kHz Ciss 10000 Coss Crss 0.1 0.01 0.001 1000 0 10 20 VDS - Volts 30 40 IXYS reserves the right to change limits, test conditions, and dimensions. 1 10 100 Pulse Width - milliseconds 1000 IXFN 340N07 Fig. 13. Forward-Bias Safe Operating Area 10,000 TC = 25ºC TJ = 150ºC R DS(on) Limit I D - Amperes 1,000 100µs 1ms 100 10ms DC 10 1 © 2004 IXYS All rights reserved 10 VD S - Volts 100 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications.Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.