IXFN34N80

HiPerFETTM Power MOSFETs Single DieMOSFET IXFN 34N80 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr VDSS = 800 V ID25 = 34 A RDS(on) = 0.24 W D trr £ 250 ns Preliminary data sheet S Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 800 V VDGR T J = 25°C to 150°C; RGS = 1 MW 800 V VGS VGSM Continuous Transient ±20 ±30 V V ID25 IDM IAR TC = 25°C TC = 25°C, pulse width limited by TJM 34 136 34 A A A EAR EAS TC = 25°C TC = 25°C 64 3 mJ J dv/dt IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, 5 V/ns 600 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 300 °C 2500 3000 V~ V~ miniBLOC, SOT-227 B E153432 S G S D G = Gate S = Source D = Drain Either Source terminal of miniBLOC can be used as Main or Kelvin Source TJ £ 150°C, RG = 2 W PD TC = 25°C TJ TL 1.6 mm (0.063 in) from case for 10 s VISOL 50/60 Hz, RMS IISOL£ 1 mA Md Mounting torque Terminal connection torque t = 1 min t=1s 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. Weight Symbol VDSS VGS(th) 30 Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VGS = 0 V, ID = 3 mA VDSS temperature coefficient 800 VGS = ±20 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 0.5 • ID25 Pulse test, t £ 300 ms, duty cycle d £ 2 % 3.0 5.0 V %/K ±200 nA 100 2 mA mA 0.24 W -0.214 TJ = 25°C TJ = 125°C IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved V %/K 0.096 VDS = VGS, ID = 8 mA VGS(th) temperature coefficient IGSS g Features · International standard packages · miniBLOC, with Aluminium nitride isolation · Low RDS (on) HDMOSTM process · Rugged polysilicon gate cell structure · Unclamped Inductive Switching (UIS) rated · Low package inductance · Fast intrinsic Rectifier Applications · DC-DC converters · Battery chargers · Switched-mode and resonant-mode power supplies · DC choppers · Temperature and lighting controls Advantages · Easy to mount · Space savings · High power density 98529D (6/99) 1-4 IXFN 34N80 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs VDS = 10 V; ID = 0.5 • ID25, pulse test C iss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz C rss td(on) tr VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 td(off) RG = 1 W (External) tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 20 35 S 7500 pF 920 pF 220 pF 45 ns 45 ns M4 screws (4x) supplied 100 ns Dim. 40 ns 270 31.88 8.20 1.240 0.307 1.255 0.323 nC C D 4.09 4.09 4.29 4.29 0.161 0.161 0.169 0.169 60 nC E F 4.09 14.91 4.29 15.11 0.161 0.587 0.169 0.595 140 nC G H 30.12 38.00 30.30 38.23 1.186 1.496 1.193 1.505 K/W J K 11.68 8.92 12.22 9.60 0.460 0.351 0.481 0.378 K/W L M 0.76 12.60 0.84 12.85 0.030 0.496 0.033 0.506 K/W N O 25.15 1.98 25.42 2.13 0.990 0.078 1.001 0.084 K/W P Q 4.95 26.54 5.97 26.90 0.195 1.045 0.235 1.059 R S 3.94 4.72 4.42 4.85 0.155 0.186 0.174 0.191 T U 24.59 -0.05 25.07 0.1 0.968 -0.002 0.987 0.004 0.15 RthJC 0.21 0.05 Source-Drain Diode Symbol Test Conditions IS VGS = 0 V ISM VSD Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 34 A Repetitive; pulse width limited by TJM 136 A IF = IS, VGS = 0 V, Pulse test, t £ 300 ms, duty cycle d £ 2 % 1.5 V 250 400 ns ns mC A trr IF = IS, -di/dt = 100 A/ms, VR = 100 V QRM IRM © 2000 IXYS All rights reserved Inches Min. Max. 31.50 7.80 0.22 RthCK Millimeter Min. Max. A B RthJC RthCK miniBLOC, SOT-227 B T J = 25°C TJ = 125°C T J = 25°C 1.4 10 IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-4 IXFN 34N80 40 40 ID - Amperes 32 VGS = 9V 8V 7V 6V TJ = 125OC 5V 32 ID - Amperes TJ = 25OC 24 16 4V 8 0 2 4 6 8 16 4V 8 10 0 4 8 Figure 1. Output Characteristics at 25OC RDS(ON) - Normalized RDS(ON) - Normalized 2.0 TJ = 125OC 1.8 1.6 1.4 1.2 TJ = 25OC 1.0 10 20 30 40 VGS = 10V 2.0 1.8 ID = 34A 1.6 ID =17A 1.4 1.2 1.0 25 50 50 ID - Amperes Figure 4. RDS(on) normalized to 0.5 ID25 value vs. ID 40 40 32 32 24 16 8 -50 75 100 0 25 50 75 100 125 150 T C - Degrees C Figure 5. Drain Current vs. Case Temperature © 2000 IXYS All rights reserved 150 RDS(on) normalized to 0.5 ID25 value vs. TJ 24 TJ = 125oC 16 TJ = 25oC 8 -25 125 T J - Degrees C ID - Amperes ID - Amperes Figure 3. 0 20 2.2 VGS = 10V 0 16 Figure 2. Output Characteristics at 125OC 2.4 0.8 12 VDS - Volts VDS - Volts 2.2 5V 24 0 0 VGS = 9V 8V 7V 6V 0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 VGS - Volts Figure 6. Admittance Curves 3-4 IXFN 34N80 12 10000 8 Capacitance - pF 10 VGS - Volts C ISS V DS = 400V ID = 17A IG = 10mA 6 4 f = 1MHz C OSS 1000 C RSS 2 0 0 50 100 100 150 200 250 300 350 400 0 5 10 Gate Charge - nC 15 20 25 30 35 40 V DS - Volts Figure 8. Capacitance Curves Figure 7. Gate Charge 80 100 0. 40 ID - Amperes ID - Amperes 60 TJ = 125 OC 20 10 1 10 25OOC C TTJJ == 25 1 D TJ = 25OC 0 0.2 0.4 0.6 0.8 1.0 1.2 0.1 1.4 10 V SD - Volts 1 00 1 000 V DS - Volts Figure 8. Forward Voltage Drop of the Intrinsic Diode R(th)JC - K/W 1.000 0.100 0.010 Single Pulse 0.001 10 -4 10 -3 10 -2 10 -1 10 0 Pulse Width - Seconds Figure 9. Transient Thermal Resistance © 2000 IXYS All rights reserved 4-4 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.