IXFN360N15T2

IXFN360N15T2 GigaMOSTM TrenchT2 HiperFETTM Power MOSFET VDSS ID25 = = 150V 310A 4.0m 150ns RDS(on)  trr  N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 E153432 S G Symbol Test Conditions VDSS TJ = 25C to 175C Maximum Ratings 150 V VDGR TJ = 25C to 175C, RGS = 1M 150 V VGSS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C (Chip Capability) 310 A IL(RMS) IDM External Lead Current Limit TC = 25C, Pulse Width Limited by T JM 200 900 A A IA EAS TC = 25C TC = 25C 100 TBD A J dv/dt IS  IDM, VDD  VDSS, T J  175°C 20 V/ns PD TC = 25C 1070 W -55 ... +175 175 -55 ... +175 C C C 2500 3000 V~ V~ 1.5/13 1.3/11.5 Nm/lb.in. Nm/lb.in. 30 g TJ TJM Tstg VISOL 50/60 Hz, RMS IISOL  1mA t = 1 minute t = 1 second Md Mounting Torque Terminal Connection Torque Weight S D G = Gate S = Source D = Drain Either Source Terminal S can be used as the Source Terminal or the Kelvin Source ( Gate Return ) Terminal. Features        International Standard Package miniBLOC, with Aluminium Nitride Isolation Isolation voltage 2500 V~ High Current Handling Capability Fast Intrinsic Diode Avalanche Rated Low RDS(on) Advantages  Easy to Mount Space Savings High Power Density   Symbol Test Conditions (T J = 25C, Unless Otherwise Specified) BVDSS Characteristic Values Min. Typ. Max. VGS = 0V, ID = 3mA VGS(th) VDS = VGS, ID = 8mA IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 60A, Note 1 150 2.5 T J = 150C Applications V   5.0 V 200 nA  50 A 5 mA  4.0 m     © 2020 Littelfuse, Inc. Synchronous Recification DC-DC Converters Battery Chargers Switched-Mode and Resonant-Mode Power Supplies DC Choppers AC Motor Drives Uninterruptible Power Supplies High Speed Power Switching Applications DS100180A(12/20) IXFN360N15T2 Symbol Test Conditions (T J = 25C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 10V, ID = 60A, Note 1 140 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss RGI td(on) tr td(off) tf 230 S 47.5 nF 3060 pF 665 pF 2.7  50 ns 170 ns 115 ns 265 ns 715 nC 185 nC 200 nC Gate Input Resistance Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 100A RG = 1 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 180A Qgd RthJC 0.14C/W RthCS C/W 0.05 Source-Drain Diode Symbol Test Conditions (T J = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V ISM Repetitive, Pulse Width Limited by T JM VSD IF = 60A, VGS = 0V, Note 1 IF = 160A, VGS = 0V trr QRM IRM -di/dt = 100A/s VR = 60V 360 A 1440 A 1.2 V 500 150 ns nC 9 A Note 1. Pulse test, t  300s; duty cycle, d  2%. Littelfuse reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405 B2 6,710,463 6,727,585 7,005,734 B2 6,759,692 7,063,975 B2 6,771,478 B2 7,071,537 7,157,338B2 IXFN360N15T2 Fig. 2. Extended Output Characteristics @ TJ = 25oC Fig. 1. Output Characteristics @ TJ = 25oC 350 350 V GS = 15V 10V 8V 7V 300 250 250 200 I D - Amperes I D - Amperes V GS = 10V 7V 6V 300 6V 150 100 200 150 5V 100 50 50 5V 4V 0 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 VDS - Volts 350 8 9 10 VGS = 10V 2.6 RDS(on) - Normalized I D - Amperes 7 3.0 VGS = 10V 8V 7V 250 6V 200 5V 150 100 50 2.2 I D = 360A 1.8 I D = 180A 1.4 1.0 0.6 4V 0 0.2 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -50 -25 0 VDS - Volts 25 50 75 100 125 150 175 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 180A Value vs. Drain Current Fig. 6. Drain Current vs. Case Temperature 3.4 220 VGS = 10V 3.0 200 External Lead Current Limit 180 2.6 160 TJ = 175oC I D - Amperes RDS(on) - Normalized 6 Fig. 4. RDS(on) Normalized to ID = 180A Value vs. Junction Temperature Fig. 3. Output Characteristics @ TJ = 150oC 300 5 VDS - Volts 2.2 1.8 1.4 140 120 100 80 60 TJ = 25oC 40 1.0 20 0.6 0 0 50 100 150 200 ID - Amperes © 2020 Littelfuse, Inc. 250 300 350 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 175 IXFN360N15T2 Fig. 7. Input Admittance Fig. 8. Transconductance 200 450 180 400 TJ = - 40oC 160 120 25oC g f s - Siemens I D - Amperes 350 TJ = 150oC 25oC - 40oC 140 100 80 60 300 250 150oC 200 150 40 100 20 50 0 0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 0 20 40 60 80 VGS - Volts 120 140 160 180 200 220 Fig. 10. Gate Charge Fig. 9. Forward Voltage Drop of Intrinsic Diode 10 350 VDS = 75V I D = 180A I G = 10mA 9 300 8 250 7 VGS - Volts I S - Amperes 100 I D - Amperes 200 150 TJ = 150oC 6 5 4 3 100 TJ = 25oC 2 50 1 0 0 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0 100 200 300 400 500 600 700 800 QG - NanoCoulombs VSD - Volts Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area 100,000 1,000.0 RDS(on) Limit 25µs 100.0 100µs External Lead Limit 10,000 I D - Amperes Capacitance - PicoFarads Ciss Coss 10.0 1ms 1,000 10ms 1.0 TJ = 175oC Crss 25oC TC = Single Pulse f = 1 MHz 100ms DC 0.1 100 0 5 10 15 20 25 30 35 40 VDS - Volts Littelfuse reserves the right to change limits, test conditions, and dimensions. 1 10 100 VDS - Volts 1,000 IXFN360N15T2 Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 340 300 RG = 1Ω , VGS = 10V VDS = 75V RG = 1Ω , VGS = 10V VDS = 75V 260 260 t r - Nanoseconds t r - Nanoseconds 300 I D = 100A 220 180 I D = 200A 140 220 TJ = 25ºC 180 TJ = 125ºC 140 100 60 100 25 35 45 55 65 75 85 95 105 115 40 125 60 80 100 TJ - Degrees Centigrade 700 210 td(off) t r - Nanoseconds 150 500 120 300 90 200 60 I D = 100A 100 30 0 2 3 4 5 6 7 220 8 9 RG = 1Ω, VGS = 10V VDS = 75V 400 160 I D = 200A 120 100 100 25 35 45 55 900 220 800 180 TJ = 125oC 300 200 105 115 80 125 0 140 ID - Amperes 160 180 200 tf td(off) 800 TJ = 125oC, VGS = 10V VDS = 75V 700 600 700 600 I D = 200A, 100A 400 400 300 300 120 200 200 100 100 140 100 900 500 TJ = 25oC © 2020 Littelfuse, Inc. 95 500 160 120 85 100 1 2 3 4 5 6 RG - Ohms 7 8 9 10 t d(off) - Nanoseconds 200 t d(off) - Nanoseconds t f - Nanoseconds 240 t f - Nanoseconds t d(off) 500 100 75 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance RG = 1Ω, VGS = 10V VDS = 75V 80 65 TJ - Degrees Centigrade tf 60 140 200 10 700 40 I D = 100A 300 Fig. 17. Resistive Turn-off Switching Times vs. Drain Current 400 200 180 RG - Ohms 600 200 td(off) 0 0 1 180 t d(off) - Nanoseconds 400 600 t d(on) - Nanoseconds I D = 200A 500 180 t f - Nanoseconds tf 160 700 tf TJ = 125oC, VGS = 10V VDS = 75V 140 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 600 120 ID - Amperes IXFN360N15T2 Fig. 19. Maximum Transient Thermal Impedance 1.000 Fig. 19. Maximium Transient Thermal Impedance .sadgsfgsf 0.200 Z(th)JC - K / W 0.100 0.010 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds Littelfuse reserves the right to change limits, test conditions, and dimensions. IXYS REF: F_360N15T2 (9V) 08-19-09 IXFN360N15T2 SOT-227B miniBLOC (IXFN) © 2020 Littelfuse, Inc. IXFN360N15T2 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. Littelfuse reserves the right to change limits, test conditions, and dimensions.