IXFN38N100P

IXFN38N100P PolarTM HiperFETTM Power MOSFET VDSS ID25 RDS(on) trr D = =   1000V 38A  210m 300ns G N-Channel Enhancement Mode Fast Intrinsic Rectifier S S miniBLOC E153432 S Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 1000 V VDGR TJ = 25C to 150C, RGS = 1M 1000 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C IDM TC = 25C, Pulse Width Limited by TJM IA EAS 38 A 120 A TC = 25C TC = 25C 19 2 A J dv/dt IS  IDM, VDD  VDSS, TJ  150C 20 V/ns PD TC = 25C 1000 W -55 ... +150 150 -55 ... +150 C C C TJ TJM Tstg VISOL 50/60 Hz, RMS, t = 1minute IISOL 1mA, t = 1s Md Mounting Torque for Base Plate Terminal Connection Torque Weight 2500 3000 V~ V~ 1.5/13 1.3/11.5 Nm/lb.in Nm/Ib.in 30 g G S D G = Gate S = Source D = Drain Either Source Terminal S can be used as the Source Terminal or the Kelvin Source (Gate Return) Terminal. Features       International Standard Package Low Intrinsic Gate Resistance miniBLOC with Aluminum Nitride Isolation Low Package Inductance Fast Intrinsic Rectifier Low RDS(on) and QG Advantages    Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 3mA 1000 VGS(th) VDS = VGS, ID = 1mA 3.5 IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 19A, Note 1 Applications V 6.5 V 300 nA TJ = 125C © 2017 IXYS CORPORATION, All Rights Reserved High Power Density Easy to Mount Space Savings 50 A 4 mA 210 m      DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies AC Motor Control High Speed Power Switching Appliccation DS99866C(8/17) IXFN38N100P Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 18 VDS = 20V, ID = 19A, Note 1 29 S 24 nF 1245 pF 80 pF 0.78  74 ns 55 ns 71 ns 40 ns 350 nC Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss RGi Gate Input Resistance td(on) Resistive Switching Times tr td(off) tf VGS = 10V, VDS = 0.5 • VDSS, ID = 19A RG = 1 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 19A Qgd SOT-227B (IXFN) Outline 150 nC 150 nC RthJC (M4 screws (4x) supplied) 0.125C/W RthCS 0.05 C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) IS VGS = 0V ISM Characteristic Values Min. Typ. Max. 38 A Repetitive, Pulse Width Limited by TJM 150 A VSD IF = IS, VGS = 0V, Note 1 1.5 V trr QRM IRM IF = 25A, -di/dt = 100A/s Note 2.5 17.0 VR = 100V, VGS = 0V 300 ns C A 1. Pulse test, t  300s, duty cycle, d  2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFN38N100P o o Fig. 2. Extended Output Characteristics @ TJ = 25 C Fig. 1. Output Characteristics @ TJ = 25 C 100 40 VGS = 15V 10V 35 VGS = 15V 11V 90 80 30 I D - Amperes I D - Amperes 70 9V 25 20 15 10V 60 50 40 9V 30 10 8V 20 5 8V 10 7V 0 0 0 1 2 3 4 5 6 7 0 8 5 10 15 40 2.6 VGS = 15V 10V 30 VGS = 10V 2.2 9V RDS(on) - Normalized 30 I D - Amperes 25 Fig. 4. RDS(on) Normalized to ID = 19A Value vs. Junction Temperature o Fig. 3. Output Characteristics @ TJ = 125 C 35 20 VDS - Volts VDS - Volts 25 20 8V 15 I D = 38A 1.8 I D = 19A 1.4 1.0 10 0.6 7V 5 6V 0 0 2 4 6 8 10 12 14 0.2 16 18 -50 -25 0 VDS - Volts Fig. 5. RDS(on) Normalized to ID = 19A Value vs. Drain Current 2.6 50 75 100 125 150 Fig. 6. Maximum Drain Current vs. Case Temperature 40 VGS = 10V 15V 2.4 35 2.2 30 o TJ = 125 C 2.0 I D - Amperes RDS(on) - Normalized 25 TJ - Degrees Centigrade 1.8 1.6 1.4 1.2 25 20 15 10 o TJ = 25 C 5 1.0 0 0.8 0 10 20 30 40 50 60 I D - Amperes © 2017 IXYS CORPORATION, All Rights Reserved 70 80 90 100 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 IXFN38N100P Fig. 7. Input Admittance Fig. 8. Transconductance 60 60 o TJ = - 40 C 55 50 50 45 30 o TJ = 125 C o 25 C o - 40 C 20 40 g f s - Siemens I D - Amperes 40 o 25 C 35 30 o 125 C 25 20 15 10 10 5 0 0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 0 10.0 10 20 30 VGS - Volts 40 50 60 70 80 I D - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 16 100 I D = 19A I G = 10mA 12 VGS - Volts 80 I S - Amperes VDS = 500V 14 60 40 o TJ = 125 C 10 8 6 4 20 o TJ = 25 C 2 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 0 50 100 VSD - Volts 200 250 300 350 400 450 500 QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area 100,000 1000 RDS(on) Limit Ciss 10,000 100 I D - Amperes Capacitance - PicoFarads 150 1,000 Coss 100 1ms 100μs 25μs DC 10 1 o TJ = 150 C o TC = 25 C Single Pulse Crss f = 1 MHz 10ms 100ms 10 0.1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 10 100 VDS - Volts 1,000 IXFN38N100P Fig. 13. Maximum Transient Thermal Impedance 1 Z(th)JC - K / W 0.1 0.01 0.001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2017 IXYS CORPORATION, All Rights Reserved IXYS REF: IXF_38N100P (99-740) 7-14-09-D Disclaimer Notice - Information furnished is believed to be accurate and reliable. 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