IXFN39N90

IXFN39N90 HiPerFETTM Power MOSFET Single MOSFET Die VDSS ID25 RDS(on) trr N-Channel Enhancement Mode Avalanche Rated = = ≤ ≤ 900V 39A Ω 220mΩ 250ns miniBLOC, SOT-227 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 900 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 900 V VGSS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C IDM TC = 25°C, Pulse Width Limited by TJM IA EAS TC = 25°C TC = 25°C dv/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C PD TC = 25°C TJ TJM Tstg VISOL Md 50/60 Hz, RMS IISOL ≤ 1mA 39 A 154 A 39 4 A J 5 V/ns 694 W -55 ... +150 150 -55 ... +150 °C °C °C 2500 3000 V~ V~ 1.5/13 1.3/11.5 Nm/lb.in. Nm/lb.in. 30 g t = 1 minute t = 1 second Mounting Torque Terminal Connection Torque Weight S G S D G = Gate S = Source D = Drain Either Source Terminal at miniBLOC can be used as Main or Kelvin Source. Features z z z z z z International Standard Package miniBLOC, with Aluminium Nitride Isolation High Current Handling Capability Fast Intrinsic Diode Avalanche Rated Low Package Inductance Advantages Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. VDSS BVDSS VGS = 0V, ID = 3mA Temperature Dependence 900 VGS(th) VGS(th) VDS = VGS, ID = 8mA Temperature Dependence 3.0 IGSS VGS = ±20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) V V/K 3.68 5.5 -0.009 ±200 TJ = 125°C VGS = 10V, ID = 0.5 • ID25, Note 1 © 2013 IXYS CORPORATION, All Rights Reserved V V/K nA 100 μA 2 mA z z z Easy to Mount Space Savings High Power Density Applications z z z z z DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies DC Choppers Temperture and Lighting Controls 220 mΩ DS98628C(6/13) IXFN39N90 Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 15V, ID = 0.5 • ID25, Note 1 30 Ciss VGS = 0V, VDS = 25V, f = 1MHz Coss 45 S 9200 pF 1360 pF 380 pF 45 ns 68 ns 125 ns 30 ns 390 nC Crss td(on) Resistive Switching Times tr VGS = 10V, VDS = 0.5 • VDSS, ID = 0 .5 • ID25 td(off) RG = 1Ω (External) tf Qg(on) VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgs SOT-227B miniBLOC (IXFN) Qgd 65 nC 190 nC (M4 screws (4x) supplied) 0.18 °C/W RthJC RthCS 0.05 °C/W Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) IS VGS = 0V ISM VSD trr 39 A Repetitive, Pulse Width Limited by TJM 154 A IF = IS, VGS = 0V, Note 1 1.3 V 250 ns IF = 39A, -di/dt = -100A/μs QRM VR = 100V, VGS = 0V IRM Note Characteristic Values Min. Typ. Max. 1: 2.0 μC 9.0 A Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFN39N90 Figure 1. Output Characteristics at 25OC Figure 2. Output Characteristics at 125OC 45 80 70 ID - Amperes 60 TJ = 125OC VGS = 9V 8V 7V 6V 40 VGS = 9V 8V 7V 6V 35 ID - Amperes TJ = 25OC 5V 50 40 30 20 30 5V 25 20 15 10 4V 10 4V 5 0 0 0 2 4 6 8 0 10 12 14 16 18 20 2 4 6 8 10 12 14 16 18 20 VDS - Volts VDS - Volts Figure 3. RDS(on) normalized to 0.5 ID25 value vs. ID 2.4 2.4 VGS = 10V VGS = 10V 2.2 2.0 RDS(ON) - Normalized RDS(ON) - Normalized 2.2 TJ = 125OC 1.8 1.6 1.4 TJ = 25OC 1.2 2.0 ID = 39A 1.8 ID =19.5A 1.6 1.4 1.2 1.0 0.8 0 10 20 30 40 50 60 70 1.0 25 80 50 ID - Amperes 75 100 125 150 T J - Degrees C Figure 5. Drain Current vs. Case Temperature Figure 6. Admittance Curves 40 50 35 40 ID - Amperes ID - Amperes 30 25 20 15 30 20 TJ = 125oC 10 10 5 TJ = 25oC 0 -50 -25 0 25 50 75 100 125 150 T C - Degrees C © 2013 IXYS CORPORATION, All Rights Reserved 0 3.5 4.0 4.5 5.0 VGS - Volts 5.5 6.0 IXFN39N90 Figure 8. Capacitance Curves Figure 7. Gate Charge 18 10 Ciss 16 VGS - Volts Capacitance - pF VDS = 450 V ID = 19.50A IG = 10 mA 8 6 4 2 14 f = 100kHz 12 10 8 6 4 Coss 2 Crss 0 0 0 50 0 100 150 200 250 300 350 400 5 10 15 20 25 30 35 40 VDS - Volts Gate Charge - nC Figure 9. Forward Voltage Drop of the Intrinsic Diode 100 VGS = 0V ID - Amperes 80 TJ = 125OC 60 TJ = 25OC 40 20 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD - Volts Figure 10. Transient Thermal Resistance R(th)JC - K/W 1.000 0.100 Single Pulse 0.010 0.001 10-4 10-3 10-2 10-1 100 101 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: F_39N90(9Y) Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.