IXFN400N15X3

IXFN400N15X3 X3-Class HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated VDSS ID25 = = 150V 400A  2.5m D RDS(on)  S miniBLOC, SOT-227 E153432  G S S G Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M 150 150 V V VGSS VGSM Continuous Transient  20  30 V V ID25 IL(RMS) IDM TC = 25C (Chip Capability) External Lead Current Limit TC = 25C, Pulse Width Limited by TJM 400 200 900 A A A IA EAS TC = 25C TC = 25C 200 3.5 A J PD TC = 25C 695 W dv/dt IS  IDM, VDD  VDSS, TJ  150°C 50 V/ns -55 ... +150 150 -55 ... +150 C C C 2500 3000 V~ V~ 1.5/13 1.3/11.5 Nm/lb.in Nm/lb.in 30 g TJ TJM Tstg VISOL 50/60 Hz, RMS IISOL  1mA Md Mounting Torque Terminal Connection Torque t = 1 minute t = 1 second Weight S D G = Gate S = Source Features         Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 3mA 150 VGS(th) VDS = VGS, ID = 8mA 2.5 IGSS VGS =  20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 200A, Note 1 TJ = 125C © 2019 IXYS CORPORATION, All Rights Reserved. International Standard Package miniBLOC, with Aluminium Nitride Isolation Isolation Voltage 2500V~ High Current Handling Capability Avalanche Rated Low RDS(on) Advantages  Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) High Power Density Easy to Mount Space Savings V Applications 4.5 V  200 nA 25 A 1.5 mA D = Drain Switch-Mode and Resonant-Mode Power Supplies  DC-DC Converters  PFC Circuits  AC and DC Motor Drives  Robotics and Servo Controls 2.5 m DS100851C(11/19) IXFN400N15X3 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max gfs VDS = 10V, ID = 60A, Note 1 85 RGi 145 S Gate Input Resistance 2.15  23.7 nF VGS = 0V, VDS = 25V, f = 1MHz 3730 pF 140 pF 2200 5330 pF pF 36 ns Ciss Coss Crss Effective Output Capacitance Co(er) Co(tr) Energy related td(on) Resistive Switching Times tr td(off) tf Time related VGS = 0V VDS = 0.8 • VDSS VGS = 10V, VDS = 0.5 • VDSS, ID = 200A RG = 1(External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 200A Qgd 30 ns 210 ns 19 ns 365 nC 103 nC 87 nC 0.18 C/W RthJC RthCS C/W 0.05 Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max IS VGS = 0V ISM Repetitive, Pulse Width Limited by TJM VSD IF = 100A, VGS = 0V, Note 1 trr QRM IRM IF = 150A, -di/dt = 100A/μs 400 A 1600 A 1.4 V 132 580 8.8 ns  nC A 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 VR = 100V Note 1. Pulse test, t  300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFN400N15X3 o o Fig. 1. Output Characteristics @ TJ = 25 C Fig. 2. Extended Output Characteristics @ TJ = 25 C 400 1000 VGS = 10V 9V 350 8V I D - Amperes 200 6V 150 8V 700 7V 250 9V 800 300 I D - Amperes VGS = 10V 900 600 500 7V 400 300 100 6V 200 5V 50 100 0 5V 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 0 2 4 6 VDS - Volts 2.2 400 VGS = 10V 9V 8V 12 14 16 VGS = 10V 2.0 7V 1.8 RDS(on) - Normalized 300 I D - Amperes 10 Fig. 4. RDS(on) Normalized to ID = 200A Value vs. Junction Temperature o Fig. 3. Output Characteristics @ TJ = 125 C 350 8 VDS - Volts 250 6V 200 150 100 I D = 400A 1.6 I D = 200A 1.4 1.2 1.0 5V 0.8 50 4V 0.6 0 0 2.4 0.2 0.4 0.6 1 1.2 1.4 1.6 1.8 -50 2 -25 0 25 50 75 100 125 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 200A Value vs. Drain Current Fig. 6. Normalized Breakdown & Threshold Voltages vs. Junction Temperature 1.3 VGS = 10V 150 1.2 2.0 BVDSS / VGS(th) - Normalized 2.2 RDS(on) - Normalized 0.8 o TJ = 125 C 1.8 1.6 1.4 1.2 o TJ = 25 C BVDSS 1.1 1.0 0.9 0.8 VGS(th) 0.7 0.6 1.0 0.5 0.8 0 100 200 300 400 500 600 700 I D - Amperes © 2019 IXYS CORPORATION, All Rights Reserved. 800 900 1000 -60 -40 -20 0 20 40 60 80 TJ - Degrees Centigrade 100 120 140 160 IXFN400N15X3 Fig. 7. Maximum Drain Current vs. Case Temperature Fig. 8. Input Admittance 400 220 200 300 160 140 I D - Amperes I D - Amperes VDS = 10V 350 External Lead Current Limit 180 120 100 80 250 200 o TJ = 125 C 150 o 25 C 60 o - 40 C 100 40 50 20 0 0 -50 -25 0 25 50 75 100 125 150 3.0 3.5 4.0 4.5 TC - Degrees Centigrade 5.5 6.0 6.5 7.0 Fig. 10. Forward Voltage Drop of Intrinsic Diode Fig. 9. Transconductance 450 800 o TJ = - 40 C VDS = 10V 400 700 350 600 300 o 25 C I S - Amperes g f s - Siemens 5.0 VGS - Volts 250 o 200 125 C 150 500 400 300 o TJ = 125 C 200 100 o TJ = 25 C 100 50 0 0 0 50 100 150 200 250 300 350 400 450 0.2 0.4 0.6 0.8 I D - Amperes 1.2 1.4 1.6 1.8 2.0 2.2 VSD - Volts Fig. 12. Capacitance Fig. 11. Gate Charge 100,000 10 9 VDS = 75V Capacitance - PicoFarads I D = 200A 8 I G = 10mA 7 VGS - Volts 1.0 6 5 4 3 2 C iss 10,000 Coss 1,000 Crss f = 1 MHz 1 0 100 0 50 100 150 200 250 300 350 400 QG - NanoCoulombs IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 100 VDS - Volts 1,000 IXFN400N15X3 Fig. 14. Forward-Bias Safe Operating Area Fig. 13. Output Capacitance Stored Energy 1000 24 RDS(on) Limit 25μs 20 100μs External Lead Current Limit 16 I D - Amperes EOSS - MicroJoules 100 12 1ms 10 8 10ms 1 o TJ = 150 C 4 DC o TC = 25 C Single Pulse 100ms Fig. 15. Maximum Transient Thermal Impedance 0 0.1 0 20 40 60 1 80 100 120 140 1 10 100 1,000 VDS - Volts VDS - Volts Fig. 15. Maximum Transient Thermal Impedance aaaaa 0.3 Z(th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2019 IXYS CORPORATION, All Rights Reserved. IXYS REF: F_400N15X3(29-S151) 7-13-17 IXFN400N15X3 SOT-227 Outline IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXFN400N15X3 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. © 2019 IXYS CORPORATION, All Rights Reserved.