IXFN40N110P

IXFN40N110P PolarTM HiperFETTM Power MOSFET VDSS ID25 RDS(on) trr D = =   1100V 34A  260m 300ns G N-Channel Enhancement Mode Fast Intrinsic Rectifier S S miniBLOC E153432 S Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 1100 V VDGR TJ = 25C to 150C, RGS = 1M 1100 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C IDM TC = 25C, Pulse Width Limited by TJM IA EAS 34 A 100 A TC = 25C TC = 25C 20 2 A J dv/dt IS  IDM, VDD  VDSS, TJ  150C 20 V/ns PD TC = 25C 890 W -55 ... +150 150 -55 ... +150 C C C TJ TJM Tstg VISOL 50/60 Hz, RMS, t = 1minute IISOL 1mA, t = 1s Md Mounting Torque for Base Plate Terminal Connection Torque Weight 2500 3000 V~ V~ 1.5/13 1.3/11.5 Nm/lb.in Nm/Ib.in 30 g G S D G = Gate S = Source D = Drain Either Source Terminal S can be used as the Source Terminal or the Kelvin Source (Gate Return) Terminal. Features       International Standard Package Low Intrinsic Gate Resistance miniBLOC with Aluminum Nitride Isolation Low Package Inductance Fast Intrinsic Rectifier Low RDS(on) and QG Advantages    Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 3mA 1100 VGS(th) VDS = VGS, ID = 1mA 3.5 IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 20A, Note 1 Applications V 6.5 V 300 nA TJ = 125C © 2017 IXYS CORPORATION, All Rights Reserved High Power Density Easy to Mount Space Savings 50 A 3 mA 260 m      DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies AC Motor Control High Speed Power Switching Appliccation DS99901B(8/17) IXFN40N110P Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 20 VDS = 20V, ID = 20A, Note 1 32 S 19 nF 1070 pF 46 pF 1.65  53 ns 55 ns 110 ns 54 ns 310 nC Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss RGi Gate Input Resistance td(on) Resistive Switching Times tr td(off) tf VGS = 10V, VDS = 0.5 • VDSS, ID = 20A RG = 1 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 20A Qgd SOT-227B (IXFN) Outline 95 nC 142 nC RthJC (M4 screws (4x) supplied) 0.14C/W RthCS 0.05 C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) IS VGS = 0V ISM Characteristic Values Min. Typ. Max. 40 A Repetitive, Pulse Width Limited by TJM 160 A VSD IF = IS, VGS = 0V, Note 1 1.5 V trr QRM IRM IF = 20A, -di/dt = 100A/s Note 2.2 16.0 VR = 100V, VGS = 0V 300 ns C A 1. Pulse test, t  300s, duty cycle, d  2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFN40N110P o o Fig. 1. Output Characteristics @ TJ = 25 C Fig. 2. Extended Output Characteristics @ TJ = 25 C 40 80 VGS = 10V VGS = 10V 35 70 60 25 50 20 I D - Amperes I D - Amperes 9V 30 8V 15 10 9V 40 30 8V 20 5 10 7V 0 7V 0 0 1 2 3 4 5 6 7 8 9 10 11 12 0 5 10 15 3.2 40 VGS = 10V 9V 35 30 RDS(on) - Normalized 8V 25 20 15 7V 10 VGS = 10V 2.8 30 I D - Amperes 25 Fig. 4. RDS(on) Normalized to ID = 20A Value vs. Junction Temperature Fig. 3. Output Characteristics @ TJ = 125oC 2.4 I D = 40A 2.0 I D = 20A 1.6 1.2 0.8 5 6V 0 0.4 0 5 10 15 20 -50 25 -25 0 VDS - Volts VGS = 10V 2.4 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 20A Value vs. Drain Current 2.6 Fig. 6. Maximum Drain Current vs. Case Temperature 45 40 o TJ = 125 C 2.2 35 2.0 30 I D - Amperes RDS(on) - Normalized 20 VDS - Volts VDS - Volts 1.8 1.6 1.4 25 20 15 o TJ = 25 C 1.2 10 1.0 5 0.8 0 0 10 20 30 40 50 I D - Amperes © 2017 IXYS CORPORATION, All Rights Reserved 60 70 80 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 IXFN40N110P Fig. 8. Transconductance Fig. 7. Input Admittance 60 45 40 o TJ = - 40 C 50 35 25 g f s - Siemens I D - Amperes 30 o TJ = 125 C 20 o 25 C o - 40 C 15 40 o 25 C 30 o 125 C 20 10 10 5 0 0 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 0 9.0 5 10 15 VGS - Volts 25 30 35 40 45 50 350 400 450 500 I D - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 120 16 VDS = 550V 14 100 I D = 20A I G = 10mA 12 VGS - Volts 80 I S - Amperes 20 60 o TJ = 125 C 40 10 8 6 o TJ = 25 C 4 20 2 0 0 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 0 50 100 VSD - Volts 200 250 300 QG - NanoCoulombs Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 1 100,000 Ciss 10,000 0.1 Z (th)JC - K / W Capacitance - PicoFarads 150 1,000 Coss 0.01 100 Crss f = 1 MHz 10 0 5 10 15 20 25 30 35 40 VDS - Volts 0.001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: IXF_40N110P (97-768) 12-15-11-A Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.