IXFN40N110Q3

IXFN40N110Q3 Q3-Class HiperFETTM Power MOSFET VDSS ID25 RDS(on) = =  1100V 35A 260m N-Channel Enhancement Mode Fast Intrinsic Rectifier miniBLOC E153432 S Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 1100 V VDGR TJ = 25C to 150C, RGS = 1M 1100 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C 35 A IDM TC = 25C, Pulse Width Limited by TJM 100 A IA TC = 25C 40 A EAS TC = 25C 4 J dv/dt IS  IDM, VDD  VDSS, TJ  150C 50 V/ns PD TC = 25C 960 W -55 ... +150 150 -55 ... +150 C C C 2500 3000 V~ V~ 1.5/13 1.3/11.5 Nm/lb.in Nm/lb.in 30 g TJ TJM Tstg VISOL Md 50/60 Hz, RMS, t = 1minute IISOL 1mA, t = 1s Mounting Torque for Base Plate Terminal Connection Torque Weight G S D G = Gate S = Source D = Drain Either Source Terminal S can be used as the Source Terminal or the Kelvin Source (Gate Return) Terminal. Features       International Standard Package Low Intrinsic Gate Resistance miniBLOC with Aluminum Nitride Isolation Low Package Inductance Fast Intrinsic Rectifier Low RDS(on) and QG Advantages    Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 3mA 1100 VGS(th) VDS = VGS, ID = 8mA 3.5 IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) V 6.5 V 200 nA TJ = 125C VGS = 10V, ID = 20A, Note 1 © 2020 IXYS CORPORATION, All Rights Reserved 50 A 3 mA High Power Density Easy to Mount Space Savings Applications      DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies DC Choppers Temperature and Lighting Controls 260 m DS100597A(1/20) IXFN40N110Q3 Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 20V, ID = 20A, Note 1 14 24 S 14 nF 984 pF 120 pF Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss RGi Gate Input Resistance td(on) Resistive Switching Times tr td(off) tf 0.18 Qgs ns 68 ns 74 ns 26 ns 300 nC 95 nC 143 nC RG = 0.5 (External) VGS = 10V, VDS = 0.5 • VDSS, ID = 20A Qgd  47 VGS = 10V, VDS = 0.5 • VDSS, ID = 20A Qg(on)  0.13 C/W RthJC RthCS 0.05 C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) IS VGS = 0V ISM VSD trr QRM IRM Note Characteristic Values Min. Typ. Max. 40 A Repetitive, Pulse Width Limited by TJM 160 A IF = IS, VGS = 0V, Note 1 1.4 V 434 4.1 18.8 IF = 20A, -di/dt = 100A/s VR = 100V, VGS = 0V ns C A 1. Pulse test, t  300s, duty cycle, d  2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFN40N110Q3 Fig. 2. Extended Output Characteristics @ TJ = 25oC Fig. 1. Output Characteristics @ TJ = 25oC 40 80 VGS = 10V 36 9V 70 32 8V 60 I D - Amperes 28 I D - Amperes V GS = 10V 24 20 7V 16 8V 50 40 7V 30 12 20 6V 8 6V 10 4 5V 5V 0 0 0 1 2 3 4 5 6 7 8 9 10 11 0 5 10 15 20 25 30 VDS - Volts VDS - Volts Fig. 3. Output Characteristics @ TJ = 125oC Fig. 4. RDS(on) Normalized to ID = 20A Value vs. Junction Temperature 40 3.2 V GS = 10V 8V 36 V GS = 10V 2.8 32 I D - Amperes RDS(on) - Normalized 7V 28 24 20 16 6V 12 8 5V 2.4 2.0 I D = 40A 1.6 I D = 20A 1.2 0.8 4 4V 0 0.4 0 2.8 5 10 15 25 -50 -25 0 25 50 75 100 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 20A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 40 VGS = 10V 2.6 125 150 125 150 35 2.4 o TJ = 125 C 30 2.2 I D - Amperes R DS(on) - Normalized 20 2.0 1.8 1.6 25 20 15 1.4 10 o TJ = 25 C 1.2 5 1.0 0.8 0 0 10 20 30 40 50 I D - Amperes © 2020 IXYS CORPORATION, All Rights Reserved 60 70 80 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXFN40N110Q3 Fig. 7. Input Admittance Fig. 8. Transconductance 40 50 o 45 TJ = - 40 C 35 40 30 o 30 o TJ = 125 C 25 o 25 C o - 40 C 20 25 C g f s - Siemens I D - Amperes 35 25 20 o 125 C 15 15 10 10 5 5 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 0 7.5 5 10 15 20 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 30 35 40 45 50 360 400 440 Fig. 10. Gate Charge 140 16 120 14 VDS = 500V I D = 20A I G = 10mA 12 V GS - Volts 100 I S - Amperes 25 I D - Amperes 80 60 o TJ = 125 C 40 10 8 6 4 o TJ = 25 C 20 2 0 0 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 0 40 80 120 VSD - Volts 160 200 240 280 320 QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area 1000 100,000 f = 1 MHz RDS(on) Limit 1ms 100 10,000 I D - Amperes Capacitance - PicoFarads Ciss Coss 1,000 10 1 100 100µs o TJ = 150 C Crss o TC = 25 C Single Pulse 0.1 10 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 10 100 VDS - Volts 1,000 IXFN40N110Q3 Fig. 13. Maximum Transient Thermal Impedance 1 Z (th)JC - K / W 0.1 0.01 0.001 0.0001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2020 IXYS CORPORATION, All Rights Reserved IXYS REF: F_40N110Q3(Q9) 02-25-14 IXFN40N110Q3 SOT-227 Outline J M4-7 NUT (4 PLACES) A B D M N C S L E F G H 0 U IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXFN40N110Q3 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. © 2020 IXYS CORPORATION, All Rights Reserved