IXFN44N100P

IXFN44N100P PolarTM HiperFETTM Power MOSFET VDSS ID25 RDS(on) trr D = =   1000V 37A  220m 300ns G N-Channel Enhancement Mode Fast Intrinsic Rectifier S S miniBLOC E153432 S Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 1000 V VDGR TJ = 25C to 150C, RGS = 1M 1000 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C IDM TC = 25C, Pulse Width Limited by TJM IA EAS 37 A 110 A TC = 25C TC = 25C 22 2 A J dv/dt IS  IDM, VDD  VDSS, TJ  150C 20 V/ns PD TC = 25C 890 W -55 ... +150 150 -55 ... +150 C C C TJ TJM Tstg VISOL 50/60 Hz, RMS, t = 1minute IISOL 1mA, t = 1s Md Mounting Torque for Base Plate Terminal Connection Torque Weight 2500 3000 V~ V~ 1.5/13 1.3/11.5 Nm/lb.in Nm/Ib.in 30 g G S D G = Gate S = Source D = Drain Either Source Terminal S can be used as the Source Terminal or the Kelvin Source (Gate Return) Terminal. Features       International Standard Package Low Intrinsic Gate Resistance miniBLOC with Aluminum Nitride Isolation Low Package Inductance Fast Intrinsic Rectifier Low RDS(on) and QG Advantages    Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 3mA 1000 VGS(th) VDS = VGS, ID = 1mA 3.5 IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 22A, Note 1 Applications V 6.5 V 200 nA TJ = 125C © 2017 IXYS CORPORATION, All Rights Reserved High Power Density Easy to Mount Space Savings 50 A 3 mA 220 m      DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies AC Motor Control High Speed Power Switching Appliccation DS99879B(8/17) IXFN44N100P Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 20 VDS = 20V, ID = 22A, Note 1 35 S 19 nF 1060 pF 41 pF 1.7  60 ns 68 ns 90 ns 54 ns 350 nC Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss RGi Gate Input Resistance td(on) Resistive Switching Times tr td(off) tf VGS = 10V, VDS = 0.5 • VDSS, ID = 22A RG = 1 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 22A Qgd SOT-227B (IXFN) Outline 104 nC 125 nC RthJC (M4 screws (4x) supplied) 0.14C/W RthCS 0.05 C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) IS VGS = 0V ISM Characteristic Values Min. Typ. Max. 44 A Repetitive, Pulse Width Limited by TJM 176 A VSD IF = IS, VGS = 0V, Note 1 1.5 V trr QRM IRM IF = 22A, -di/dt = 100A/s Note 2.5 17.0 VR = 100V, VGS = 0V 300 ns C A 1. Pulse test, t  300s, duty cycle, d  2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFN44N100P o o Fig. 2. Extended Output Characteristics @ TJ = 25 C Fig. 1. Output Characteristics @ TJ = 25 C 45 80 VGS = 10V 9V 40 70 35 9V 60 30 8V I D - Amperes I D - Amperes VGS = 10V 25 20 15 10 50 40 8V 30 20 7V 7V 10 5 0 0 0 1 2 3 4 5 6 7 8 9 10 11 0 5 10 15 3.0 45 VGS = 10V 30 VGS = 10V 2.6 35 RDS(on) - Normalized 8V 30 I D - Amperes 25 Fig. 4. RDS(on) Normalized to ID = 22A Value vs. Junction Temperature o Fig. 3. Output Characteristics @ TJ = 125 C 40 20 VDS - Volts VDS - Volts 25 20 7V 15 2.2 I D = 44A 1.8 I D = 22A 1.4 1.0 10 0.6 5 6V 0 0 2 4 6 8 10 12 14 16 18 0.2 20 22 24 -50 -25 0 VDS - Volts Fig. 5. RDS(on) Normalized to ID = 22A Value vs. Drain Current 2.6 2.4 50 75 100 125 150 Fig. 6. Maximum Drain Current vs. Case Temperature 40 35 o TJ = 125 C 2.2 30 2.0 1.8 I D - Amperes RDS(on) - Normalized 25 TJ - Degrees Centigrade VGS = 10V 1.6 1.4 25 20 15 o TJ = 25 C 10 1.2 5 1.0 0 0.8 0 10 20 30 40 50 60 I D - Amperes © 2017 IXYS CORPORATION, All Rights Reserved 70 80 90 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 IXFN44N100P Fig. 7. Input Admittance Fig. 8. Transconductance 50 60 45 55 o TJ = - 40 C 50 40 45 30 o TJ = 125 C 25 o 25 C o - 40 C 20 o 25 C 40 g f s - Siemens I D - Amperes 35 35 o 125 C 30 25 20 15 15 10 10 5 5 0 0 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 0 9.0 5 10 15 20 VGS - Volts 25 30 35 40 45 50 I D - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 16 120 VDS = 500V 100 12 80 10 VGS - Volts I S - Amperes 14 60 40 o TJ = 125 C I D = 22A I G = 10mA 8 6 4 20 o TJ = 25 C 2 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0 50 100 VSD - Volts 200 250 300 350 400 QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Maximum Transient Thermal Impedance 100,000 1 C iss 10,000 0.1 Z (th)JC - K / W Capacitance - PicoFarads 150 1,000 C oss 0.01 100 f = 1 MHz Crss 10 0 5 10 15 20 25 30 35 40 VDS - Volts 0.001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: IXF_44N100P (97-744) 4-01-08-D Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.