IXFN44N50

HiPerFETTM Power MOSFETs VDSS TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings IXFK IXFN VDSS T J = 25°C to 150°C 500 500 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 500 500 V VGS Continuous ±20 ±20 V VGSM Transient ±30 ±30 V ID25 TC = 25°C 44N50 48N50 44 48 44 48 A A IDM TC = 25°C, pulse width limited by TJM 44N50 48N50 176 192 176 192 A A IAR TC = 25°C 24 24 A EAR TC = 25°C 30 30 mJ dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω 5 5 V/ns TC = 25°C G 520 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C TJ 300 - °C t = 1 min t=1s - 2500 3000 V~ V~ Mounting torque Terminal connection torque 0.9/6 - TL 1.6 mm (0.063 in) from case for 10 s VISOL 50/60 Hz, RMS IISOL ≤ 1 mA Md D (TAB) S miniBLOC, SOT-227 B (IXFN) E153432 S D G G S S 500 RDS(on) 500 V 44 A 0.12 Ω 500 V 48 A 0.10 Ω trr ≤ 250 ns IXFK / IXFN 44 N50 IXFK / IXFN 48 N50 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr PD ID25 D S G = Gate S = Source D = Drain TAB = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source Features International standard packages Molding epoxies meet UL 94 V-0 flammability classification SOT-227B miniBLOC with aluminium nitride isolation Low RDS (on) HDMOSTM process Unclamped Inductive Switching (UIS) rated Fast intrinsic rectifier l l l Weight Symbol 10 Test Conditions 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 g Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. l l l Applications DC-DC converters Synchronous rectification Battery chargers Switched-mode and resonant-mode power supplies DC choppers Temperature and lighting controls l VDSS VGS = 0 V, ID = 1 mA 500 VGS(th) VDS = VGS, ID = 8 mA 2 IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = 0.8 • VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 0.5 • ID25 V 4 V ±200 nA TJ = 25°C TJ = 125°C 400 2 µA mA 44N50 48N50 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 0.12 0.10 Ω Ω l l l l l Advantages Easy to mount Space savings High power density l l l IXYS reserves the right to change limits, test conditions, and dimensions. C1 - 184 93001I (07/00) © 2000 IXYS All rights reserved IXFN / IXFK 44N50 IXFN / IXFK 48N50 Symbol Test Conditions gfs VDS = 10 V; ID = 0.5 • ID25, pulse test Ciss Coss Crss td(on) tr td(off) Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VGS = 0 V, VDS = 25 V, f = 1 MHz VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 1 Ω (External), tf Qg(on) Qgs Qgd VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 22 42 S 8400 900 280 pF pF pF 30 60 100 ns ns ns 30 ns 270 60 135 nC nC nC RthJC RthCK TO-264 AA TO-264 AA 0.15 RthJC RthCK miniBLOC, SOT-227 B miniBLOC, SOT-227 B 0.05 Source-Drain Diode Symbol Test Conditions IS VGS = 0 V ISM VSD t rr QRM IRM 0.25 K/W K/W 0.24 K/W K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 48 A Repetitive; pulse width limited by TJM 192 A IF = 100 A, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 1.5 V 250 ns µC A IF = IS, -di/dt = 100 A/µs, VR = 100 V TBD 20 TO-264 AA Outline Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T Millimeter Min. Max. 4.82 2.54 2.00 1.12 2.39 2.90 0.53 25.91 19.81 5.46 0.00 0.00 20.32 2.29 3.17 6.07 8.38 3.81 1.78 6.04 1.57 5.13 2.89 2.10 1.42 2.69 3.09 0.83 26.16 19.96 BSC 0.25 0.25 20.83 2.59 3.66 6.27 8.69 4.32 2.29 6.30 1.83 Inches Min. Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 miniBLOC, SOT-227 B M4 screws (4x) supplied Dim. © 2000 IXYS All rights reserved Millimeter Min. Max. Inches Min. Max. A B 31.50 7.80 31.88 8.20 1.240 0.307 1.255 0.323 C D 4.09 4.09 4.29 4.29 0.161 0.161 0.169 0.169 E F 4.09 14.91 4.29 15.11 0.161 0.587 0.169 0.595 G H 30.12 38.00 30.30 38.23 1.186 1.496 1.193 1.505 J K 11.68 8.92 12.22 9.60 0.460 0.351 0.481 0.378 L M 0.76 12.60 0.84 12.85 0.030 0.496 0.033 0.506 N O 25.15 1.98 25.42 2.13 0.990 0.078 1.001 0.084 P Q 4.95 26.54 5.97 26.90 0.195 1.045 0.235 1.059 R S 3.94 4.72 4.42 4.85 0.155 0.186 0.174 0.191 T U 24.59 -0.05 25.07 0.1 0.968 -0.002 0.987 0.004 IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 C1 - 185 IXFN / IXFK 44N50 IXFN / IXFK 48N50 Fig. 1 Output Characteristics 100 90 6V 80 80 70 70 ID - Amperes ID - Amperes 100 7V VGS = 10V TJ = 25°C 90 Fig. 2 Input Admittance 60 50 40 5V 30 TJ = 25°C 60 50 40 30 20 20 10 10 0 0 0 5 10 15 20 25 30 35 0 1 2 3 VDS - Volts 7 8 9 10 2.50 TJ = 25°C 2.25 1.4 1.3 VGS = 10V 1.2 VGS = 15V 1.1 RDS(on) - Normalized 1.5 RDS(on) - Normalized 6 Fig. 4 Temperature Dependence of Drain to Source Resistance 1.6 1.0 2.00 1.75 ID = 24A 1.50 1.25 1.00 0.75 0.9 0 0.50 -50 10 20 30 40 50 60 70 80 90 100 -25 0 ID - Amperes 1.2 48N50 44N50 30 20 10 0 -50 75 100 125 150 VGS(th) BVDSS 1.1 BV/VG(th) - Normalized 40 50 Fig. 6 Temperature Dependence of Breakdown and Threshold Voltage 60 50 25 TJ - Degrees C Fig. 5 Drain Current vs. Case Temperature ID - Amperes 5 VGS - Volts Fig. 3 RDS(on) vs. Drain Current 1.0 0.9 0.8 0.7 0.6 -25 0 25 50 75 TC - Degrees C C1 - 186 4 100 125 150 0.5 -50 -25 0 25 50 75 100 125 150 TJ - Degrees C © 2000 IXYS All rights reserved IXFN / IXFK 44N50 IXFN / IXFK 48N50 Fig.7 Gate Charge Characteristic Curve Fig.8 Capacitance Curves 10 10000 VDS = 250V 9 9000 ID = 24A 6 5 4 3 7000 5000 4000 3000 2000 1 1000 0 0 50 f = 1 MHz VDS = 25V 6000 2 0 Ciss 8000 Capacitance - pF VGE - Volts 8 I = 10mA G 7 100 150 200 250 300 350 400 Coss Crss 0 5 Gate Charge - nCoulombs 10 15 20 25 VDS - Volts Fig.9 Source Current vs. Source to Drain Voltage 100 90 ID - Amperes 80 70 60 50 TJ = 125°C 40 30 TJ = 25°C 20 10 0 0.00 0.25 0.50 0.75 1.00 1.25 1.50 VSD - Volt Thermal Response - K/W Fig.10 Transient Thermal Impedance 0.1 0.01 0.001 0.01 0.1 1 Time - Seconds © 2000 IXYS All rights reserved C1 - 187 Disclaimer Notice - Information furnished is believed to be accurate and reliable. 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