IXFN44N50Q

HiPerFETTM Power MOSFETs Q-Class VDSS trr ≤ 250 ns Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 44N50 48N50 44 48 A A IDM TC = 25°C, pulse width limited by TJM 44N50 48N50 176 192 A A IAR TC = 25°C 48 A EAR EAS TC = 25°C 60 2.5 mJ mJ dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω 15 V/ns PD TC = 25°C 500 W -55 to +150 °C TJM 150 °C Tstg -55 to +150 °C 2500 3000 V~ V~ 1.5/13 1.5/13 Nm/lb.in. Nm/lb.in. 30 g TJ 50/60 Hz, RMS IISOL≤ 1 mA Md Mounting torque Terminal connection torque t = 1 min t=1s Weight Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VDSS VGS = 0 V, ID = 1 mA 500 VGS(th) VDS = VGS, ID = 4 mA 2.0 IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 0.5 ID25 V 4.0 V ±100 nA TJ = 25°C TJ = 125°C 100 2 µA mA 44N50 48N50 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 120 100 Ω Ω © 2003 IXYS All rights reserved RDS(on) 500 V 44 A 120 mΩ Ω Ω 500 V 48 A 100 mΩ IXFN 44N50Q IXFN 48N50Q N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt VISOL ID25 miniBLOC, SOT-227 B (IXFN) E153432 S G S G = Gate S = Source D D = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source Features • IXYS advanced low Qg process • Low gate charge and capacitances - easier to drive -faster switching • Unclamped Inductive Switching (UIS) rated • Low RDS (on) • Fast intrinsic diode • International standard package • miniBLOC with Aluminium nitride isolation for low thermal resistance • Low terminal inductance (