IXFN44N60

HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 44N60 VDSS = ID25 = RDS(on) = D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Test Conditions trr £ 250 ns G S Symbol S Maximum Ratings VDSS T J = 25°C to 150°C 600 V VDGR T J = 25°C to 150°C; RGS = 1 MW 600 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 44 A IDM TC = 25°C, pulse width limited by TJM IAR A TC = 25°C 44 A EAR TC = 25°C 60 mJ EAS TC = 25°C 3 J dv/dt IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, T J £ 150°C, RG = 2 W 5 V/ns PD TC = 25°C 600 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C - °C 2500 3000 V~ V~ TJ 1.6 mm (0.63 in) from case for 10 s VISOL 50/60 Hz, RMS IISOL £ 1 mA Md Mounting torque Terminal connection torque t = 1 min t=1s 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. Weight 30 Symbol Test Conditions VDSS VGS = 0 V, ID = 3 mA 600 VGH(th) VDS = VGS, ID = 8 mA 2.5 IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) g Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. V 4.5 V ±100 nA TJ = 25°C TJ = 125°C 100 2 mA mA VGS = 10 V, ID = 0.5 • ID25 Pulse test, t £ 300 ms, duty cycle d £ 2 % 130 mW IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved miniBLOC, SOT-227 B E153432 S G 176 TJ 600 V 44 A 130 mW S D G = Gate S = Source D = Drain TAB = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source Features • International standard package • miniBLOC, with Aluminium nitride • • • • • isolation Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance Fast intrinsic Rectifier Applications • DC-DC converters • Battery chargers • Switched-mode and resonant-mode power supplies • DC choppers • Temperature and lighting controls Advantages • Easy to mount • Space savings • High power density 98610B (7/00) 1-4 IXFN 44N60 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs VDS = 10 V; ID = 0.5 • ID25, pulse test 30 C iss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz C rss td(on) tr VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 td(off) RG = 1 W (External), tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 45 S 8900 pF 1000 pF 330 pF 42 ns 55 ns M4 screws (4x) supplied 110 ns Dim. 45 ns 330 31.88 8.20 1.240 0.307 1.255 0.323 nC C D 4.09 4.09 4.29 4.29 0.161 0.161 0.169 0.169 60 nC E F 4.09 14.91 4.29 15.11 0.161 0.587 0.169 0.595 65 nC G H 30.12 38.00 30.30 38.23 1.186 1.496 1.193 1.505 K/W J K 11.68 8.92 12.22 9.60 0.460 0.351 0.481 0.378 K/W L M 0.76 12.60 0.84 12.85 0.030 0.496 0.033 0.506 N O 25.15 1.98 25.42 2.13 0.990 0.078 1.001 0.084 P Q 4.95 26.54 5.97 26.90 0.195 1.045 0.235 1.059 R S 3.94 4.72 4.42 4.85 0.155 0.186 0.174 0.191 T U 24.59 -0.05 25.07 0.1 0.968 -0.002 0.987 0.004 0.05 Symbol Test Conditions IS VGS = 0 V ISM Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 44 A Repetitive; pulse width limited by TJM 176 A VSD IF = IS, VGS = 0 V, Pulse test, t £ 300 ms, duty cycle d £ 2 % 1.3 V t rr QRM IRM IF = 50A, -di/dt = 100 A/ms, VR = 100 V 250 ns mC A © 2000 IXYS All rights reserved Inches Min. Max. 31.50 7.80 0.21 Source-Drain Diode Millimeter Min. Max. A B RthJC RthCK miniBLOC, SOT-227 B 1.4 8 IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-4 IXFN 44N60 Figure 1. Output Characteristics at 25OC Figure 2. Output Characteristics at 125OC 80 100 O TJ = 25 C 60 60 ID - Amperes ID - Amperes 80 5V 40 5V 40 0 0 0 4 8 12 16 20 0 24 4 8 12 16 20 24 VDS - Volts VDS - Volts Figure 3. RDS(on) normalized to 15A/25OC vs. ID Figure 4. RDS(on) normalized to 15A/25OC vs. TJ 2.4 2.4 VGS = 10V VGS = 10V TJ = 125OC RDS(ON) - Normalized RDS(ON) - Normalized 6V 20 20 2.0 1.6 TJ = 25OC 1.2 0.8 0 20 40 60 80 2.0 ID = 44A 1.6 ID = 22A 1.2 0.8 25 100 50 ID - Amperes 100 125 150 Figure 6. Admittance Curves 60 60 50 50 ID - Amperes 40 30 20 10 TJ = 125oC 40 30 TJ = 25oC 20 10 0 -50 -25 75 TJ - Degrees C Figure 5. Drain Current vs. Case Temperature ID - Amperes VGS = 10V 9V 8V 7V TJ = 125OC VGS = 10V 9V 8V 7V 6V 0 25 50 75 TC - Degrees C © 2000 IXYS All rights reserved 100 125 150 0 3.0 3.5 4.0 4.5 5.0 5.5 VGS - Volts 3-4 IXFN 44N60 Figure 7. Gate Charge Figure 8. Capacitance Curves 12 10000 Capacitance - pF 8 VGS - Volts Ciss VDS = 300V ID = 30A IG = 10mA 10 6 4 Coss 1000 Crss 2 0 f = 1MHz 0 50 100 150 200 250 300 350 400 100 0 5 10 15 Gate Charge - nC 20 25 30 35 40 VDS - Volts Figure 9. Forward Voltage Drop of the Intrinsic Diode 100 ID - Amperes 80 TJ = 125OC 60 40 TJ = 25OC 20 0 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Volts Figure 10. Transient Thermal Resistance R(th)JC - K/W 1.00 0.10 0.01 0.00 10-4 10-3 10-2 10-1 100 101 Pulse Width - Seconds © 2000 IXYS All rights reserved 4-4 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. 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