IXFN44N80

Power MOSFET HiPerFETTM Single MOSFET Die IXFN44N80 VDSS ID25 RDS(on) = 800V = 44A ≤ 0.165Ω Ω N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 800 V VGSS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C, Chip capability IDM TC = 25°C, pulse width limited by TJM IAR 44 S G S D A 176 A TC = 25°C 44 A EAR TC = 25°C 64 mJ EAS TC = 25°C 4 J dV/dt IS 5 V/ns 700 W -55 ... +150 °C with Aluminium nitride isolation •Low RDS (on) HDMOSTM process TJM 150 °C •Rugged polysilicon gate cell Tstg -55 ... +150 °C 2500 3000 V~ V~ 1.5/13 1.3/11.5 Nm/lb.in. Nm/lb.in. 30 g ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 1Ω PD TC = 25°C TJ VISOL Md 50/60 Hz, RMS IISOL ≤ 1mA t = 1min t = 1s Mounting torque Terminal connection torque Weight Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VGS = 0V, ID = 3mA 800 VGS(th) VDS = VGS, ID = 8mA 2.5 IGSS VGS = ±20V, VDS = 0V IDSS VDS = VDSS VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 © 2007 IXYS CORPORATION, All rights reserved TJ = 125°C V 4.5 V ±200 nA Either Source terminal at miniBLOC can be used as Main or Kelvin Source Features •International standard packages •miniBLOC, structure •Unclamped Inductive Switching (UIS) rated •Low package inductance •Fast intrinsic Rectifier Applications •DC-DC converters power supplies • DC choppers •Temperature and lighting controls 100 μA 2 mA Advantages • Easy to mount Ω • Space savings 0.165 D = Drain •Battery chargers •Switched-mode and resonant-mode Characteristic Values Min. Typ. Max. BVDSS G = Gate S = Source DS98594E(08/07) IXFN 44N80 Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. gfs 32 VDS = 15V, ID = 0.5 • ID25, Note 1 Ciss Coss 50 S 10000 VGS = 0V, VDS = 25V, f = 1MHz Crss pF 1300 pF 330 pF td(on) Resistive Switching Times 35 ns tr VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 48 ns td(off) RG = 1Ω (External) 100 ns 24 ns 380 nC 70 nC 170 nC tf QG(on) QGS VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 QGD 0.18 °C/W RthJC RthCK °C/W 0.05 Source-Drain Diode Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. IS VGS = 0V ISM Repetitive, pulse width limited by TJM VSD IF = IS, VGS = 0V, Note 1 trr QRM IF = 22A, -di/dt = 100A/μs, VR = 100V IRM miniBLOC, SOT-227 B 44 A 176 A 1.3 V 250 ns 1.2 μC 8 A M4 screws (4x) supplied Dim. Millimeter Min. Max. Inches Min. Max. A B 31.50 7.80 31.88 8.20 1.240 0.307 1.255 0.323 C D 4.09 4.09 4.29 4.29 0.161 0.161 0.169 0.169 E F 4.09 14.91 4.29 15.11 0.161 0.587 0.169 0.595 G H 30.12 38.00 30.30 38.23 1.186 1.496 1.193 1.505 J K 11.68 8.92 12.22 9.60 0.460 0.351 0.481 0.378 L M 0.76 12.60 0.84 12.85 0.030 0.496 0.033 0.506 N O 25.15 1.98 25.42 2.13 0.990 0.078 1.001 0.084 P Q 4.95 26.54 5.97 26.90 0.195 1.045 0.235 1.059 R S 3.94 4.72 4.42 4.85 0.155 0.186 0.174 0.191 T U 24.59 -0.05 25.07 0.1 0.968 -0.002 0.987 0.004 Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFN44N80 60 90 VGS = 9V 8V 7V 6V O TJ = 25 C 45 ID - Amperes ID - Amperes 75 VGS = 9V 8V 7V 6V TJ = 125OC 60 45 30 5V 5V 30 15 4V 15 4V 0 0 0 5 10 15 0 20 5 15 20 VDS - Volts VDS - Volts 2.4 2.5 VGS = 10V VGS = 10V 2.0 RDS(ON) - Normalized RDS(ON) - Normalized 10 TJ = 125OC 1.6 TJ = 25OC 1.2 0.8 0 20 40 60 2.2 1.9 ID = 44A 1.3 1.0 25 80 ID = 22A 1.6 50 ID - Amperes 75 100 125 150 T J - Degrees C 60 50 50 ID - Amperes ID - Amperes 40 30 20 40 30 20 TJ = 125oC 10 TJ = 25oC 10 0 3.5 0 -50 -25 0 25 50 75 100 125 150 T C - Degrees C © 2007 IXYS CORPORATION, All rights reserved 4.0 4.5 VGS - Volts 5.0 5.5 IXFN 44N80 10 30000 VDS = 500 V ID = 18 A IG = 10 mA Ciss 10000 Capacitance - pF 8 6 4 f = 100kHz Coss 1000 Crss 2 100 0 0 100 200 300 0 400 5 10 15 20 25 30 35 40 V DS - Volts Gate Charge - nC 100 80 60 TJ = 125OC 40 TJ = 25OC 20 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD - Volts R(th)JC K/W 1.000 0.100 0.010 0.001 10-4 10-3 10-2 10-1 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. 100 101 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.