IXFN44N80P

IXFN44N80P PolarTM HiperFETTM Power MOSFET VDSS ID25 RDS(on) trr D = =   800V 39A  190m 250ns G N-Channel Enhancement Mode Fast Intrinsic Rectifier S S miniBLOC E153432 S Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 800 V VDGR TJ = 25C to 150C, RGS = 1M 800 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C 39 A IDM TC = 25C, Pulse Width Limited by TJM 100 A IA EAS TC = 25C TC = 25C 22 3.4 A J dv/dt IS  IDM, VDD  VDSS, TJ  150C 10 V/ns PD TC = 25C 694 W -55 ... +150 150 -55 ... +150 C C C TJ TJM Tstg VISOL 50/60 Hz, RMS, t = 1minute IISOL 1mA, t = 1s Md Mounting Torque for Base Plate Terminal Connection Torque Weight 2500 3000 V~ V~ 1.5/13 1.3/11.5 Nm/lb.in Nm/Ib.in 30 g G S D G = Gate S = Source D = Drain Either Source Terminal S can be used as the Source Terminal or the Kelvin Source (Gate Return) Terminal. Features       International Standard Package Low Intrinsic Gate Resistance miniBLOC with Aluminum Nitride Isolation Low Package Inductance Fast Intrinsic Rectifier Low RDS(on) and QG Advantages    Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 800A 800 VGS(th) VDS = VGS, ID = 8mA 3.0 IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 22A, Note 1 Applications V 5.0 V 200 nA TJ = 125C © 2017 IXYS CORPORATION, All Rights Reserved High Power Density Easy to Mount Space Savings 50 A 1.5 mA 190 m      DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies AC Motor Control High Speed Power Switching Appliccation DS99503F(8/17) IXFN44N80P Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 27 VDS = 20V, ID = 22A, Note 1 43 S 18 nF 910 pF 30 pF 28 ns 22 ns 75 ns 27 ns 200 nC 67 nC 65 nC Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 22A RG = 1 (External) Qg(on) Qgs SOT-227B (IXFN) Outline VGS = 10V, VDS = 0.5 • VDSS, ID = 22A Qgd (M4 screws (4x) supplied) 0.18C/W RthJC RthCS 0.05 C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) IS VGS = 0V ISM Characteristic Values Min. Typ. Max. 44 A Repetitive, Pulse Width Limited by TJM 100 A VSD IF = IS, VGS = 0V, Note 1 1.5 V trr QRM IRM IF = 22A, -di/dt = 100A/s Note 0.8 8.0 VR = 100V, VGS = 0V 250 ns C A 1. Pulse test, t  300s, duty cycle, d  2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFN44N80P o o Fig. 2. Extended Output Characteristics @ TJ = 25 C Fig. 1. Output Characteristics @ TJ = 25 C 100 45 VGS = 10V 40 35 80 6V 7V 70 I D - Amperes 30 I D - Amperes VGS = 10V 90 25 20 15 60 6V 50 40 30 10 20 5V 5 5V 10 0 0 0 1 2 3 4 5 6 7 0 8 5 10 15 25 30 Fig. 4. RDS(on) Normalized to ID = 22A Value vs. Junction Temperature o Fig. 3. Output Characteristics @ TJ = 125 C 2.6 45 VGS = 10V 40 VGS = 10V 2.2 RDS(on) - Normalized 6V 35 30 I D - Amperes 20 VDS - Volts VDS - Volts 25 20 5V 15 I D = 44A 1.8 I D = 22A 1.4 1.0 10 0.6 5 0 0.2 0 2 4 6 8 10 12 14 16 -50 -25 0 VDS - Volts Fig. 5. RDS(on) Normalized to ID = 22A Value vs. Drain Current 2.4 VGS = 10V 2.2 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 6. Maximum Drain Current vs. Case Temperature 50 45 o TJ = 125 C 40 35 1.8 I D - Amperes RDS(on) - Normalized 2.0 1.6 o TJ = 25 C 1.4 30 25 20 15 1.2 10 1.0 5 0 0.8 0 10 20 30 40 50 60 I D - Amperes © 2017 IXYS CORPORATION, All Rights Reserved 70 80 90 100 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 IXFN44N80P Fig. 7. Input Admittance Fig. 8. Transconductance 80 90 70 80 70 60 o 50 40 o TJ = 125 C o 25 C 30 o 25 C 60 g f s - Siemens I D - Amperes o TJ = - 40 C o 125 C 50 40 30 - 40 C 20 20 10 10 0 0 3.5 4.0 4.5 5.0 5.5 6.0 0 6.5 10 20 30 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 50 60 70 80 Fig. 10. Gate Charge 140 10 VDS = 400V 9 120 I D = 22A 8 100 I G = 10mA 7 V GS - Volts I S - Amperes 40 I D - Amperes 80 60 40 6 5 4 3 o TJ = 125 C 2 o 20 TJ = 25 C 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 0 20 40 VSD - Volts 60 80 100 120 140 160 180 200 QG - NanoCoulombs Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 100,000 1 f = 1 MHz Z (th)JC - K / W Capacitance - PicoFarads Ciss 10,000 Coss 1,000 0.1 100 Crss 10 0 5 10 15 20 25 30 35 40 VDS - Volts 0.01 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: IXF_44N80P (9S-788) 6-8-06-A Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.