IXFN44N80Q3

IXFN44N80Q3 Q3-Class HiperFETTM Power MOSFET VDSS ID25 RDS(on) trr N-Channel Enhancement Mode Fast Intrinsic Rectifier Avalanche Rated = =   800V 37A 190m 300ns miniBLOC E153432 S Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 800 V VDGR TJ = 25C to 150C, RGS = 1M 800 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C 37 A IDM TC = 25C, Pulse Width Limited by TJM 130 A IA EAS TC = 25C TC = 25C 44 3.5 A J dv/dt IS  IDM, VDD  VDSS, TJ  150C 50 V/ns PD TC = 25C 780 W -55 ... +150 150 -55 ... +150 C C C TJ TJM Tstg VISOL 50/60 Hz, RMS, t = 1minute IISOL 1mA, t = 1s Md Mounting Torque for Base Plate Terminal Connection Torque Weight 2500 3000 V~ V~ 1.5/13 1.3/11.5 Nm/lb.in. Nm/lb.in. 30 g G S D G = Gate S = Source D = Drain Either Source Terminal S can be used as the Source Terminal or the Kelvin Source (Gate Return) Terminal. Features        International Standard Package Low Intrinsic Gate Resistance miniBLOC with Aluminum Nitride Isolation Avalanche Rated Low Package Inductance Fast Intrinsic Rectifier Low RDS(on) and QG Advantages    Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 3mA 800 VGS(th) VDS = VGS, ID = 8mA 3.5 IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) V 6.5 V 200 nA TJ = 125C VGS = 10V, ID = 22A, Note 1 © 2020 IXYS CORPORATION, All Rights Reserved 50 A 2.5 mA 190 m High Power Density Easy to Mount Space Savings Applications      DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies DC Choppers Temperature and Lighting Controls DS100360C(1/20) IXFN44N80Q3 Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 22 VDS = 20V, ID = 22A, Note 1 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz 37 S 10950 pF 957 pF 95 pF Crss RGi Gate Input Resistance td(on) Resistive Switching Times tr td(off) tf 0.20 Qgs  45 ns 60 ns 63 ns 20 ns 185 nC 67 nC 83 nC VGS = 10V, VDS = 0.5 • VDSS, ID = 22A RG = 1 (External) Qg(on)  VGS = 10V, VDS = 0.5 • VDSS, ID = 22A Qgd RthJC 0.16C/W RthCS 0.05 C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) IS VGS = 0V ISM VSD trr QRM IRM Note Characteristic Values Min. Typ. Max. 44 A Repetitive, Pulse Width Limited by TJM 176 A IF = IS, VGS = 0V, Note 1 1.4 V IF = 22A, -di/dt = 100A/s 1.8 13.4 VR = 100V, VGS = 0V 300 ns C A 1. Pulse test, t  300s, duty cycle, d  2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFN44N80Q3 Fig. 1. Output Characteristics @ TJ = 25oC Fig. 2. Extended Output Characteristics @ TJ = 25oC 45 110 V GS = 10V 9V 40 100 VGS = 10V 90 35 80 I D - Amperes I D - Amperes 8V 30 25 20 7V 15 9V 70 60 50 8V 40 30 10 7V 20 5 6V 10 0 6V 0 0 1 2 3 4 5 6 7 8 0 5 10 15 20 25 30 VDS - Volts VDS - Volts Fig. 3. Output Characteristics @ TJ = 125oC Fig. 4. RDS(on) Normalized to ID = 22A Value vs. Junction Temperature 45 3.0 VGS = 10V 9V 40 VGS = 10V 2.6 RDS(on) - Normalized 35 I D - Amperes 30 25 8V 20 15 1.8 I D = 22A 1.4 0.6 5 6V 0 0.2 0 3.0 2 4 6 8 10 12 14 16 18 -50 -25 0 25 50 75 100 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 22A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 125 150 125 150 40 VGS = 10V 35 2.6 o TJ = 125 C 30 2.2 I D - Amperes R DS(on) - Normalized I D = 44A 1.0 7V 10 2.2 1.8 o TJ = 25 C 1.4 25 20 15 10 1.0 5 0 0.6 0 10 20 30 40 50 60 I D - Amperes © 2020 IXYS CORPORATION, All Rights Reserved 70 80 90 100 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXFN44N80Q3 Fig. 7. Input Admittance Fig. 8. Transconductance 70 60 o TJ = - 40 C 60 50 o TJ = 125 C o o 25 C 25 C o - 40 C g f s - Siemens I D - Amperes 50 40 30 40 o 125 C 30 20 20 10 10 0 0 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 0 10 20 30 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 50 60 70 Fig. 10. Gate Charge 140 10 VDS = 400V 9 120 I D = 22A 8 100 I G = 10mA 7 VGS - Volts I S - Amperes 40 I D - Amperes 80 60 6 5 4 o TJ = 125 C 3 40 o TJ = 25 C 2 20 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0 40 80 VSD - Volts 120 160 200 240 QG - NanoCoulombs Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 1000 100,000 f = 1 MHz RDS(on) Limit 10,000 100 I D - Amperes Capacitance - PicoFarads Ciss 1,000 Coss 100 25µs 100µs 10 1 o TJ = 150 C Crss 1ms o TC = 25 C Single Pulse 10 0.1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 10 100 VDS - Volts 1,000 IXFN44N80Q3 Fig. 13. Maximum Transient Thermal Impedance 1 Fig. 13. Maximum Transient Thermal Impedance aaaaa 0.4 Z (th)JC - K / W 0.1 0.01 0.001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2020 IXYS CORPORATION, All Rights Reserved IXYS REF: F_44N80Q3(Q8-R88)10-10-12 IXFN44N80Q3 SOT-227 Outline J M4-7 NUT (4 PLACES) A B D M N C S L E F G H 0 U IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXFN44N80Q3 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. © 2020 IXYS CORPORATION, All Rights Reserved