IXFN50N120SIC

IXFN50N120SiC preliminary SiC Power MOSFET ID25 = 47 A VDSS = 1200 V RDS(on) max = 50 mΩ Part number IXFN50N120SiC S G D S Backside: isolated UL pending D (3) G (2) S (1, 4) Features / Advantages: Applications: Package: SOT-227B (minibloc) • High speed switching with low capacitances • High blocking voltage with low RDS(on) • Easy to parallel and simple to drive • Avalanche ruggedness • Resistant to latch-up • Solar inverters • High voltage DC/DC converters • Motor drives • Switch mode power supplies • UPS • Battery chargers • Induction heating • Isolation Voltage: 3000 V~ • Industry standard outline • RoHS compliant • Epoxy meets UL 94V-0 • Base plate with Aluminium nitride isolation • Advanced power cycling Terms & Conditions of usage The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of your product, please contact your local sales office. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office. Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures. IXYS reserves the right to change limits, test conditions and dimensions. © 2018 IXYS All rights reserved 20180223b 1-7 IXFN50N120SiC preliminary MOSFET Ratings Symbol Definitions Conditions min. VDSS drain source breakdown voltage typ. VGS = 0 V, ID = 200µA 1200 VGSM VGS max transient gate source voltage continous gate source voltage recommended operational value ID25 ID80 ID100 drain current TC = 25°C VGS = 20 V TC = 80°C TC = 100°C RDSon static drain source on resistance ID = 40 A; VGS = 20 V TVJ = 25°C TVJ = 150°C VGS(th) gate threshold voltage ID = 10 mA; VGS = VDS TVJ = 25°C TVJ = 150°C IDSS drain source leakage current VDS = 1200 V; VGS = 0 V TVJ = 25°C TVJ = 150°C IGSS gate source leakage current VDS = 0 V; VGS = 20 V RG internal gate resistance Ciss Coss Crss input capacitance output capacitance reverse transfer (Miller) capacitance VDS = 1000 V; VGS = 0 V; f = 1 MHz TVJ = 25°C 1900 160 13 pF pF pF Qg Qgs Qgd total gate charge gate source charge gate drain (Miller) charge VDS = 800 V; ID = 40 A; VGS = 0/20 V TVJ = 25°C 100 22 36 nC nC nC td(on) tr td(off) tf Eon Eoff Erec(off) turn-on delay time current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse reverse recovery losses at turn-off Inductive switching VDS = 800 V; ID = 40 A TVJ = 25°C VGS = -5 / 20 V; RG = 10 Ω (external) Freewheeling diode is Mosfet's body diode 23 9 75 19 1.08 0.29 0.04 ns ns ns ns mJ mJ mJ td(on) tr td(off) tf Eon Eoff Erec(off) turn-on delay time current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse reverse recovery losses at turn-off Inductive switching TVJ = 150°C VDS = 800 V; ID = 40 A VGS = -5 / 20 V; RG = 10 Ω (external) Freewheeling diode is Mosfet's body diode 23 9 100 22 1.48 0.35 0.10 ns ns ns ns mJ mJ mJ RthJC RthJH thermal resistance junction to case thermal resistance junction to heatsink with heatsink compound; IXYS test setup 0.62 V -10 -5 2.0 max. +25 +20 V V 47 35 30 A A A 40 75 50 mΩ mΩ 2.6 2.1 4.0 V V 2 20 200 µA µA 0.5 µA 4.8 Ω TVJ = 25°C 0.55 Source-Drain Diode K/W K/W Ratings Symbol Definitions Conditions VSD forward voltage drop IF = 40 A; VGS = -5 V TVJ = 25°C TVJ = 150°C min. trr QRM IRM dIF/dt reverse recovery time reverse recovery charge (intrinsic diode) max. reverse recovery current current slew rate VGS = -5 V; IF = 40 A; VR = 800 V Mosfet gate drive: VGS = -5 / 20 V; RG = 10 Ω TVJ = 25°C trr QRM IRM dIF/dt reverse recovery time reverse recovery charge (intrinsic diode) max. reverse recovery current current slew rate VGS = -5 V; IF = 40 A; VR = 800 V Mosfet gate drive: VGS = -5 / 20 V; RG = 10 Ω TVJ = 150°C typ. max. 5.2 4.6 V V 16 330 35 4800 ns nC A A/µs 26 810 45 4600 ns nC A A/µs Note: When using SiC Body Diode the maximum recommended VGS = -5V IXYS reserves the right to change limits, test conditions and dimensions. © 2018 IXYS All rights reserved 20180223b 2-7 IXFN50N120SiC preliminary Package SOT-227B (minibloc) min. Ratings typ. max. storage temperature operation temperature virtual junction temperature -40 -40 -40 150 150 175 °C °C °C MD mounting torque 1.1 1.5 Nm MT terminal torque 1.1 1.5 Symbol IRMS Definitions RMS current Tstg Top TVJ Conditions per terminal Weight 30 dSpp/App dSpb/Apb creepage distance on surface | striking distance through air VISOL isolation voltage terminal to backside terminal to terminal Unit A g Nm 10.5 / 3.2 8.6 / 6.8 mm mm 3000 2500 V V IISOL < 1 mA; 50/60 Hz, t = 1 sec. t = 1 minute Product Marking Part No. Logo XXXXX yywwZ ® abcd DateCode Assembly Line Assembly Code Ordering Part Name Marking on Product Standard IXFN50N120SiC IXFN50N120SiC IXYS reserves the right to change limits, test conditions and dimensions. © 2018 IXYS All rights reserved Delivering Mode Base Qty Ordering Code Tube 10 515282 20180223b 3-7 IXFN50N120SiC preliminary Outlines SOT-227B (minibloc) J H A G Nut M4 DIN 934 Lens Head Screw M4x8 DIN 7985 K Z Dim. B 4 3 1 2 S C M W N * V T D E L F* Q R * Center of each nut pocket O P U A B C D E F G H J K L M N O P Q R S T U V W Z Millimeter min max 31.50 31.88 7.80 8.20 4.09 4.29 4.09 4.29 4.09 4.29 14.91 15.11 30.12 30.30 37.80 38.23 11.68 12.22 8.92 9.60 0.74 0.84 12.50 13.10 25.15 25.42 1.95 2.13 6.20 4.95 26.90 26.54 4.42 3.94 4.55 4.85 24.59 25.25 -0.05 0.10 3.20 5.50 19.81 21.08 2.50 2.70 Inches min max 1.240 1.255 0.307 0.323 0.161 0.169 0.161 0.169 0.161 0.169 0.587 0.595 1.186 1.193 1.488 1.505 0.460 0.481 0.351 0.378 0.029 0.033 0.492 0.516 0.990 1.001 0.077 0.084 0.195 0.244 1.045 1.059 0.155 0.167 0.179 0.191 0.968 0.994 -0.002 0.004 0.126 0.217 0.780 0.830 0.098 0.106 D (3) G (2) S (1, 4) IXYS reserves the right to change limits, test conditions and dimensions. © 2018 IXYS All rights reserved 20180223b 4-7 IXFN50N120SiC preliminary Curves 100 100 20 V TVJ = -25°C 18 V 16 V 14 V 80 20 V TVJ = 25°C 18 V 16 V 80 14 V ID 60 60 ID 12 V [A] [A] 40 40 VGS = 10 V 20 12 V VGS = 10 V 20 0 0 0 1 2 3 4 5 6 7 8 9 10 0 1 2 3 4 VDS [V] Fig. 1 Typical output characteristics (-25°C) 100 5 6 7 8 Fig. 2 Typical output characteristics (25°C) VGS = 20 V 20 V 18 V 16 V 14 V ID = 80 A 2.0 40 A 12 V [A] 10 2.5 TVJ = 150°C 80 ID 9 VDS [V] 60 1.5 RDS(on) VGS = 10 V normalized 40 1.0 20 0.5 0 0 1 2 3 4 5 6 7 8 9 0.0 -25 10 0 25 50 VDS [V] 75 100 125 150 175 TVJ [°C] Fig. 4 RDS(on) normalized vs. junction temperature TVJ Fig. 3 Typical output characteristics (150°C) 100 100 VGS = 20 V ID = 40 A TVJ = 150°C 80 VGS = 14 V 16 V 18 V 20 V 80 RDS(on) RDS(on) 60 60 25°C [mOhm] [mOhm] -25°C 40 40 20 0 20 40 60 80 100 IDS [A] Fig. 5 RDS(on) versus drain current IXYS reserves the right to change limits, test conditions and dimensions. © 2018 IXYS All rights reserved 20 -25 0 25 50 75 100 125 150 175 TVJ [°C] Fig. 6 RDS(on) versus junction temperature TVJ 20180223b 5-7 IXFN50N120SiC preliminary Curves 1.2 3.00 100 VDS = 20 V 1.1 2.75 1.0 2.50 VDSS VDSS VTH IDSS = 0.2 mA 0.9 80 TVJ = 150°C ID 60 2.25 [V] normalized 0.8 [A] 25°C 40 2.00 -55°C VTH 0.7 1.75 IDSS = 10 mA 0.6 -25 0 25 50 75 100 125 150 1.50 175 20 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 TVJ [°C] VGS [V] Fig. 7 Norm. breakdow VDSS & treshhold voltage VTH Fig. 8 Typical transfer characteristics versus junction temperature TVJ 30 0 TVJ = -55°C 25°C TVJ = -55°C -20 25 150°C -40 20 gfs -5 V -2 V IDS -60 15 [S] [V] -80 VGS = 0 V 10 -100 5 -120 0 -140 0 10 20 30 40 50 60 70 -9 80 -8 -7 -6 ID [A] -5 -4 -3 -2 -1 0 VDS [V] Fig. 10 Forward voltage drop of intrinsic diode versus VDS measured at -55°C Fig. 9 Typical forward transconductance 0 0 TVJ = 150°C TVJ = 25°C -20 -20 -5 V -2 V -40 -40 -5 V -2 V IDS -60 IDS -60 VGS = 0 V [V] -80 VGS = 0 V [V] -80 -100 -100 -120 -120 -140 -140 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 VDS [V] Fig. 11 Forward voltage drop of intrinsic diode versus VDS measured at 25°C IXYS reserves the right to change limits, test conditions and dimensions. © 2018 IXYS All rights reserved -9 -8 -7 -6 -5 -4 -3 -2 -1 0 VDS [V] Fig. 12 Forward voltage drop of intrinsic diode versus VDS measured at 150°C 20180223b 6-7 IXFN50N120SiC preliminary Curves 3.2 2.8 2.4 1.6 Eon RG = 10 Ω TVJ = 150°C VDS = 800 V VGS = -5/20 V 1.2 Eon RG = 10 Ω VDS = 800 V VGS = -5/20 V ID = 40 A 2.0 E Erec x10 1.6 [mJ] E 0.8 [mJ] 1.2 Eoff 0.8 Erec x10 0.4 Eoff 0.4 0.0 0 10 20 30 40 50 60 70 80 0.0 20 90 40 60 80 ID [A] Fig. 13 Typical switching energy versus drain current 160 1.6 [mJ] 0.8 ID = 40 A TVJ = 150°C VDS = 800 V VGS = -5/20 V 80 td(off) [ns] Erec x5 td(on) Eoff tf tr 0 0.0 4 8 12 16 20 4 24 8 12 16 20 24 RG [Ω] RG [Ω] Fig. 15 Typical switching energy versus external gate resistor Fig. 16 Typical switching time versus external gate resistor 20 0.8 ID = 40 A TVJ = 25°C VDS = 800 V 15 IGS = 10 mA VGS 160 t 40 0.4 140 ID = 40 A TVJ = 150°C VDS = 800 V VGS = -5/20 V 120 E 1.2 120 Fig. 14 Typical switching energy versus temperature 2.0 Eon 100 TVJ [°C] 0.6 Zth(J-H) 10 0.4 [V] 5 [K/W] 0.2 0 -5 0 20 40 60 80 100 120 140 QG [nC] Fig. 17 Typical turn on gate charge, trendline IXYS reserves the right to change limits, test conditions and dimensions. © 2018 IXYS All rights reserved 0.0 1 10 100 1000 10000 tp [ms] Fig. 18 Typical transient thermal impedance 20180223b 7-7