IXFN50N120SK

IXFN50N120SK SiC Power MOSFET ID25 = 48 A VDSS = 1200 V RDS(on) max = 50 mΩ Kelvin Source gate connection KS Part number IXFN50N120SK G D S G (2) KS (1) Features / Advantages: Applications: Package: SOT-227B (minibloc) • Solar inverters • High voltage DC/DC converters • Motor drives • Switch mode power supplies • UPS • Battery chargers • Induction heating • Isolation Voltage: 3000 V~ • Industry standard outline • RoHS compliant • Epoxy meets UL 94V-0 • Base plate with Aluminium nitride insolation • Advanced power cycling e n t • High speed switching with low capacitances • High blocking voltage with low RDS(on) • Easy to parallel and simple to drive • Resistant to latch-up • Real Kelvin source connection a t S (4) Backside: isolated E153432 iv e D (3) t Terms & Conditions of usage The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of your product, please contact the sales office, which is responsible for you. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you. Should you intend to use the product in aviation, in health or live endangering or life support applications, please notify. For any such application we urgently recommend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures. IXYS reserves the right to change limits, test conditions and dimensions. © 2016 IXYS All rights reserved 20160225 1-4 IXFN50N120SK MOSFET Ratings Symbol Definitions VDS(max) max drain source voltage Conditions min. VGS(max) VGS max transient gate source voltage continous gate source voltage recommended operational value ID25 ID80 ID100 drain current VGS = 20 V TC = 25°C TC = 80°C TC = 100°C RDSon static drain source on resistance ID = 40 A; VGS = 20 V TVJ = 25°C TVJ = 150°C VGS(th) gate threshold voltage ID = 10 mA; VGS = VDS TVJ = 25°C TVJ = 150°C IDSS drain source leakage current VDS = 1200 V; VGS = 0 V TVJ = 25°C IGSS gate source leakage current VDS = 0 V; VGS = 20 V TVJ = 25°C RG internal gate resistance f = 1 MHz, VAC = 25 mV Ciss Coss Crss input capacitance output capacitance reverse transfer (Miller) capacitance VDS = 1000 V; VGS = 0 V; f = 1 MHz TVJ = 25°C Qg Qgs Qgd total gate charge gate source charge gate drain (Miller) charge VDS = 800 V; ID = 40 A; VGS = -5/20 V TVJ = 25°C td(on) tr td(off) tf Eon Eoff turn-on delay time current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse Inductive switching TVJ = 125°C Free Wheeling Diode: Body Diode @ VGS = -5V VDS = 800 V; ID = 40A VGS = -5/20 V; RG = 2.5 Ω (external) RthJC RthJH thermal resistance junction to case thermal resistance junction to heatsink typ. 1200 V +25 +20 V V 48 38 33 A A A 40 84 52 mΩ mΩ 2.8 2.0 tbd V V 1 100 µA 0.25 µA -10 -5 e 2.4 max. 1.8 Ω 1895 150 10 pF pF pF 115 28 37 nC nC nC iv ns ns ns ns mJ mJ 0.6 0.72 K/W K/W Source-Drain Diode a t with heatsink compound; IXYS test setup Definitions IS25 IS80 continuous source current VSD forward voltage drop trr QRM IRM reverse recovery time reverse recovery charge (intrinsic diode) max. reverse recovery current Ratings Conditions n min. VGS = -5 V TC = 25°C TC = 80°C IF = 20 A; VGS = -5 V TVJ = 25°C TVJ = 150°C VGS = -5 V; IF = 40 A VR = 800 V; -diF /dt = 1000 A/µs TVJ = 25°C t Symbol typ. max. A A 3.3 3.1 V V 54 285 15 ns nC A t e Note: When using SiC Body Diode the maximum recommended VGS = -5V IXYS reserves the right to change limits, test conditions and dimensions. © 2016 IXYS All rights reserved 20160225 2-4 IXFN50N120SK Package SOT-227B (minibloc) min. Ratings typ. max. storage temperature operation temperature virtual junction temperature -40 -40 -40 150 150 175 °C °C °C MD mounting torque 1.1 1.5 Nm MT terminal torque 1.1 1.5 Symbol IRMS Definitions RMS current Tstg Top TVJ Conditions per terminal Weight 30 dSpp/App dSpb/Apb creepage distance on surface | striking distance through air VISOL isolation voltage terminal to backside terminal to terminal Unit A g Nm 10.5 / 3.2 8.6 / 6.8 mm mm 3000 2500 V V IISOL < 1 mA; 50/60 Hz, t = 1 sec. t = 1 minute e Product Marking Logo XXXXX yywwZ ® abcd Assembly Code Ordering Part Name Marking on Product IXFN50N120SK IXFN50N120SK Delivering Mode Base Qty Ordering Code Tube 10 517988 t e n Standard t a t DateCode Assembly Line iv Part No. IXYS reserves the right to change limits, test conditions and dimensions. © 2016 IXYS All rights reserved 20160225 3-4 IXFN50N120SK D (3) t e n t a t iv e Outlines SOT-227B (minibloc) G (2) KS (1) S (4) IXYS reserves the right to change limits, test conditions and dimensions. © 2016 IXYS All rights reserved 20160225 4-4