IXFN520N075T2

IXFN520N075T2 TrenchT2TM GigaMOSTM HiperFETTM Power MOSFET VDSS ID25 75V 480A  1.9m RDS(on)  N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 E153432 S Symbol Test Conditions VDSS TJ = 25C to 175C 75 V VDGR TJ = 25C to 175C, RGS = 1M 75 V VGSS VGSM Continuous Transient 20 30 V V ID25 TC = 25C (Chip Capability) IL(RMS) = = Maximum Ratings 480 External Lead Current Limit G S D A 200 A 1500 A TC = 25C TC = 25C 200 3 A J TC = 25C 940 W Either Source Terminal S can be used as the Source Terminal or the Kelvin Source ( Gate Return ) Terminal. -55 ... +175 175 -55 ... +175 C C C Features 2500 3000 V~ V~ 1.5/13 1.3/11.5 Nm/lb.in. Nm/lb.in.  30 g  IDM TC = 25C, Pulse Width Limited by TJM IA EAS PD TJ TJM Tstg VISOL 50/60 Hz, RMS IISOL  1mA t = 1 minute t = 1 second Md Mounting Torque Terminal Connection Torque Weight G = Gate S = Source       D = Drain International Standard Package miniBLOC, with Aluminium Nitride Isolation 175°C Operating Temperature Isolation Voltage 2500 V~ High Current Handling Capability Fast Intrinsic Diode Avalanche Rated Low RDS(on) Advantages Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 3mA 75 VGS(th) VDS = VGS, ID = 8mA 2.5 IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) © 2018 IXYS CORPORATION, All Rights Reserved  V 5.0 V 200 nA TJ = 150C VGS = 10V, ID = 100A, Note 1  1.5  Easy to Mount Space Savings High Power Density Applications 25 A 2 mA  1.9 m   DC-DC Converters and Off-Line UPS Primary-Side Switch High Speed Power Switching Applications DS100193B(4/18) IXFN520N075T2 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 65 VDS = 10V, ID = 60A, Note 1 105 S 41 nF 4150 pF 530 pF 1.36  48 ns 36 ns 80 ns 35 ns 545 nC 177 nC 135 nC Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss RGi td(on) tr td(off) tf Gate Input Resistance Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 200A RG = 1 (External) Qg(on) Qgs SOT-227B (IXFN) Outline VGS = 10V, VDS = 0.5 • VDSS, ID = 260A Qgd (M4 screws (4x) supplied) 0.16 C/W RthJC RthCS 0.05 C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V ISM Repetitive, Pulse Width Limited by TJM VSD IF = 100A, VGS = 0V, Note 1 trr IRM IF = 150A, VGS = 0V QRM -di/dt = 100A/s VR = 37.5V 520 A 1600 A 1.25 V 7 150 ns A 357 nC Note 1. Pulse test, t  300s, duty cycle, d  2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFN520N075T2 o o Fig. 2. Extended Output Characteristics @ TJ = 25 C Fig. 1. Output Characteristics @ TJ = 25 C 350 350 VGS = 15V VGS = 15V 10V 9V 300 250 250 8V I D - Amperes I D - Amperes 10V 9V 8V 300 200 7V 150 100 7V 200 150 6V 100 6V 50 50 5V 5V 0 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.0 0.7 0.5 1.0 350 2.2 VGS = 15V 10V 9V 2.5 3.0 VGS = 10V 2.0 1.8 250 8V 200 RDS(on) - Normalized I D - Amperes 2.0 Fig. 4. RDS(on) Normalized to ID = 150A Value vs. Junction Temperature o Fig. 3. Output Characteristics @ TJ = 150 C 300 1.5 VDS - Volts VDS - Volts 7V 150 100 6V ID = 300A 1.6 ID = 150A 1.4 1.2 1.0 50 0.8 5V 0 0.0 2.2 0.2 0.4 0.6 0.8 0.6 1.0 1.2 1.4 -50 -25 0 25 50 75 100 125 150 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 150A Value vs. Drain Current Fig. 6. Drain Current vs. Case Temperature 175 200 2.0 External Lead Current Limit o 160 1.8 1.6 I D - Amperes RDS(on) - Normalized TJ = 175 C VGS = 10V 15V 1.4 120 80 1.2 o TJ = 25 C 40 1.0 0 0.8 0 50 100 150 200 I D - Amperes © 2018 IXYS CORPORATION, All Rights Reserved 250 300 350 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 175 IXFN520N075T2 Fig. 8. Transconductance Fig. 7. Input Admittance 200 200 180 180 o TJ = - 40 C 160 160 o TJ = 150 C o - 40 C 120 o 25 C 140 o 25 C g f s - Siemens I D - Amperes 140 100 80 120 o 150 C 100 80 60 60 40 40 20 20 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 0 7.0 20 40 60 80 VGS - Volts 120 140 160 180 200 220 Fig. 10. Gate Charge Fig. 9. Forward Voltage Drop of Intrinsic Diode 10 300 VDS = 37.5V 9 250 I D = 260A 8 I G = 10mA 7 VGS - Volts 200 I S - Amperes 100 I D - Amperes 150 6 5 4 o TJ = 150 C 100 3 o TJ = 25 C 2 50 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0 100 200 VSD - Volts 400 500 600 Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 10,000 100 RDS(on) Limit C iss 1,000 25μs 10 I D - Amperes Capacitance - NanoFarads 300 QG - NanoCoulombs C oss 100μs External Lead Limit 100 1ms 1 10 10ms o TJ = 175 C C rss 100ms o TC = 25 C f = 1 MHz DC Single Pulse 0.1 1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.1 1 10 VDS - Volts 100 IXFN520N075T2 Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 180 180 RG = 1Ω , VGS = 10V 160 RG = 1Ω , VGS = 10V 160 VDS = 37.5V 140 140 120 120 VDS = 37.5V t r - Nanoseconds t r - Nanoseconds o I D = 200A 100 80 60 TJ = 125 C 100 80 60 I D = 100A 40 40 20 20 o TJ = 25 C 0 0 25 35 45 55 65 75 85 95 105 115 40 125 60 80 100 TJ - Degrees Centigrade 600 tr td(off) o 120 I D = 100A 40 32 0 30 6 7 8 9 VDS = 37.5V 110 100 I D = 200A 34 45 55 65 75 85 95 105 115 TJ - Degrees Centigrade Fig. 17. Resistive Turn-off Switching Times vs. Drain Current Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance 600 tf td(off) 160 RG = 1Ω, VGS = 10V o o TJ = 125 C 100 36 80 34 60 32 60 80 100 120 140 160 I D - Amperes © 2018 IXYS CORPORATION, All Rights Reserved 180 40 200 t f - Nanoseconds 120 400 400 I D = 200A, 100A 300 300 200 200 100 100 0 0 1 2 3 4 5 6 RG - Ohms 7 8 9 10 t d(off) - Nanoseconds 40 t d(off) - Nanoseconds 140 o 500 VDS = 37.5V 42 TJ = 25 C td(off) TJ = 125 C, VGS = 10V 500 VDS = 37.5V 38 70 125 600 180 44 t f - Nanoseconds 35 RG - Ohms tf 90 80 25 10 46 40 120 36 100 5 130 I D = 100A 80 4 td(off) 38 200 0 tf RG = 1Ω, VGS = 10V 40 t f - Nanoseconds t r - Nanoseconds 300 3 200 t d(off) - Nanoseconds 160 t d(on) - Nanoseconds 400 2 180 140 42 200 I D = 200A VDS = 37.5V 1 160 44 240 TJ = 125 C, VGS = 10V 140 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 500 120 I D - Amperes IXFN520N075T2 Fig. 19. Maximum Transient Thermal Impedance 1.000 Fig. 19. Maximum Transient Thermal Impedance .sadgsfgsf 0.300 Z (th )JC - K / W 0.100 0.010 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: F_520N075T2 (V9)11-09-09 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.