IXFN52N100X

IXFN52N100X X-Class HiPerFETTM Power MOSFET VDSS ID25 G S S miniBLOC, SOT-227 E153432  S Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M 1000 1000 V V VGSS VGSM Continuous Transient  30  40 V V ID25 IDM TC = 25C TC = 25C, Pulse Width Limited by TJM 44 100 A A IA EAS TC = 25C TC = 25C 10 3 A J PD TC = 25C 830 W dv/dt IS  IDM, VDD  VDSS, TJ  150°C 50 V/ns -55 ... +150 150 -55 ... +150 C C C 2500 3000 V~ V~ 1.5/13 1.3/11.5 Nm/lb.in Nm/lb.in 30 g TJ TJM Tstg VISOL 50/60 Hz, RMS IISOL  1mA Md Mounting Torque Terminal Connection Torque 1000V 44A  125m RDS(on)  D N-Channel Enhancement Mode Avalanche Rated = = t = 1 minute t = 1 second Weight G S D G = Gate S = Source D = Drain Features       International Standard Package miniBLOC, with Aluminium Nitride Isolation Isolation Voltage 2500 V~ Low QG Avalanche Rated Low Package Inductance Advantages    Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 1000 VGS(th) VDS = VGS, ID = 4mA 3.5 IGSS VGS =  30V, VDS = 0V IDSS VDS = VDSS, VGS= 0V RDS(on) VGS = 10V, ID = 26A, Note 1 TJ = 125C ©2019 IXYS CORPORATION, All Rights Reserved V 6.0 V 100 nA 50 A 5 mA High Power Density Easy to Mount Space Savings Applications Switch-Mode and Resonant-Mode Power Supplies  DC-DC Converters  PFC Circuits  AC and DC Motor Drives  Robotics and Servo Controls  125 m DS100911D(11/19) IXFN52N100X Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs VDS = 20V, ID = 26A, Note 1 RGi Gate Input Resistance Characteristic Values Min. Typ. Max 23 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz 37 S 0.5  6725 pF 1620 pF 123 pF 220 1070 pF pF 34 ns Crss Co(er) Co(tr) td(on) tr td(off) tf Effective Output Capacitance VGS = 0V Energy related VDS = 0.8 • VDSS Time related Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 26A RG = 1(External) Qg(on) Qgs SOT-227B miniBLOC (IXFN) VGS = 10V, VDS = 0.5 • VDSS, ID = 26A Qgd 13 ns 107 ns 9 ns 245 nC 53 nC 125 nC RthJC 0.15C/W RthCS 0.10C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS VGS = 0V ISM VSD trr QRM IRM Characteristic Values Min. Typ. Max. 52 A Repetitive, Pulse Width Limited by TJM 208 A IF = IS , VGS = 0V, Note 1 1.4 V 260 IF = 26A, -di/dt = 100A/s 2.7 VR = 100V, VGS = 0V 20.8 ns  μC A Note 1. Pulse test, t  300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFN52N100X o o Fig. 1. Output Characteristics @ TJ = 25 C Fig. 2. Extended Output Characteristics @ TJ = 25 C 140 VGS = 10V 50 8V 40 100 7V I D - Amperes I D - Amperes VGS = 10V 9V 120 30 20 8V 80 60 7V 40 6V 10 20 6V 5V 0 5V 0 0 1 2 3 4 5 6 7 8 9 0 5 10 15 20 VDS - Volts 35 40 45 50 Fig. 4. RDS(on) Normalized to ID = 26A Value vs. Junction Temperature o 3.8 VGS = 10V 8V 3.4 VGS = 10V 3.0 RDS(on) - Normalized 7V 40 I D - Amperes 30 VDS - Volts Fig. 3. Output Characteristics @ TJ = 125 C 50 25 30 6V 20 2.6 2.2 I D = 52A 1.8 I D = 26A 1.4 1.0 10 5V 0.6 0 0.2 0 2 4 6 8 10 12 14 16 18 20 22 -50 -25 0 25 VDS - Volts Fig. 5. RDS(on) Normalized to ID = 26A Value vs. Drain Current 4.5 100 125 150 1.2 o BVDSS / VGS(th) - Normalized TJ = 125 C 3.5 RDS(on) - Normalized 75 Fig. 6. Normalized Breakdown & Threshold Voltages vs. Junction Temperature 1.3 VGS = 10V 4.0 50 TJ - Degrees Centigrade 3.0 2.5 o TJ = 25 C 2.0 1.5 BVDSS 1.1 1.0 0.9 0.8 VGS(th) 0.7 1.0 0.5 0.6 0 13 26 39 52 65 78 I D - Amperes ©2019 IXYS CORPORATION, All Rights Reserved 91 104 117 130 -60 -40 -20 0 20 40 60 80 TJ - Degrees Centigrade 100 120 140 160 IXFN52N100X Fig. 7. Maximum Drain Current vs. Case Temperature Fig. 8. Input Admittance 50 45 40 VDS = 20V - Amperes 35 30 30 25 o TJ = 125 C 20 o 25 C o - 40 C I D 20 I D - Amperes 40 15 10 10 5 0 0 -50 -25 0 25 50 75 100 125 150 3.5 4.0 4.5 5.0 TC - Degrees Centigrade 5.5 6.0 6.5 7.0 7.5 VGS - Volts Fig. 10. Forward Voltage Drop of Intrinsic Diode Fig. 9. Transconductance 200 60 o TJ = - 40 C VDS = 20V 50 160 o 30 - Amperes 25 C o S 125 C 120 80 o I g f s - Siemens 40 TJ = 125 C 20 o TJ = 25 C 40 10 0 0 0 5 10 15 20 25 30 35 40 0.2 45 0.4 0.6 0.8 1 Fig. 11. Gate Charge 1.4 1.6 Fig. 12. Capacitance 10 100,000 VDS = 500V Capacitance - PicoFarads I D = 26A 8 I G = 10mA VGS - Volts 1.2 VSD - Volts I D - Amperes 6 4 Ciss 10,000 1,000 Coss 100 10 2 Crss f = 1 MHz 1 0 0 50 100 150 200 250 QG - NanoCoulombs IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 100 VDS - Volts 1000 IXFN52N100X Fig. 13. Output Capacitance Stored Energy Fig. 14. Forward-Bias Safe Operating Area 100 120 RDS(on) Limit 25μs 100 I D - Amperes EOSS - MicroJoules 100μs 10 80 60 40 1ms 1 o TJ = 150 C o TC = 25 C Single Pulse 20 1 10ms Fig. 15. Maximum Transient Thermal Impedance 0 DC 0.1 0 100 200 300 400 500 600 700 800 900 1000 10 100 VDS - Volts 100ms 1,000 VDS - Volts Fig. 15. Maximum Transient Thermal Impedance aaaaa 0.3 Z (th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds ©2019 IXYS CORPORATION, All Rights Reserved IXYS_F_52N100X (U8-DA01) 10-02-18-A IXFN52N100X Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.