IXFN56N90P

IXFN56N90P PolarTM HiPerFETTM Power MOSFET VDSS ID25 = =   RDS(on) trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier 900V 56A  145m 300ns miniBLOC E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 900 V VDGR TJ = 25C to 150C, RGS = 1M 900 V VGSS Continuous  30 V VGSM Transient  40 V ID25 TC = 25C IDM TC = 25C, Pulse Width Limited by TJM IA S 56 A 168 A TC = 25C 28 A EAS TC = 25C 2 J dv/dt IS  IDM, VDD  VDSS, TJ  150C 20 V/ns PD TC = 25C 1000 W -55 ... +150 C TJM 150 C Tstg -55 ... +150 C TJ TL 1.6mm (0.062 in.) from case for 10s VISOL 50/60 Hz, RMS IISOL  1mA Md Mounting Torque Terminal Connection Torque t = 1min t = 1s Weight 300 C 2500 3000 V~ V~ 1.5/13 1.3/11.5 Nm/lb.in. Nm/lb.in. 30 g G S D G = Gate S = Source Either Source terminal S can be used as the Source terminal or the Kelvin Source (gate return) terminal. Features International Standard Package miniBLOC, with Aluminium Nitride Isolation  Low RDS(on) and QG  Avalanche Rated  Low Package Inductance  Fast Intrinsic Rectifier   Advantages    Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 3mA 900 VGS(th) VDS = VGS, ID = 1mA 3.5 IGSS VGS =  30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) TJ = 125C VGS = 10V, ID = 0.5 • ID25, Note 1 © 2014 IXYS CORPORATION, All Rights Reserved V 6.5 V  200 nA 50 A 5 mA D = Drain High Power Density Easy to Mount Space Savings Applications      Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters Laser Drivers AC and DC Motor Drives Robotics and Servo Controls 145 m DS100066B(01/14) IXFN56N90P Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs VDS = 20V, ID = 0.5 • ID25, Note 1 27 RGi Gate Input Resistance 44 S 0.85  23 nF Ciss VGS = 0V, VDS = 25V, f = 1MHz Coss 1385 pF 106 pF Resistive Switching Times 74 ns VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 80 ns 93 ns 38 ns 375 nC 80 nC 145 nC Crss td(on) tr td(off) RG = 1 (External) tf Qg(on) VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgs SOT-227B (IXFN) Outline Qgd (M4 screws (4x) supplied) 0.125 C/W RthJC RthCS 0.05 C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) IS VGS = 0V ISM VSD trr 56 A Repetitive, Pulse Width Limited by TJM 224 A IF = IS, VGS = 0V, Note 1 1.5 V 300 ns IF = 0.5 • ID25, -di/dt = 100A/s QRM VR = 100V, VGS = 0V IRM Note Characteristic Values Min. Typ. Max. 1. 1.8 C 15.0 A Pulse test, t  300s, duty cycle, d  2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFN56N90P Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC 120 60 VGS = 10V 9V VGS = 10V 9V 100 50 8V 80 ID - Amperes ID - Amperes 40 30 7V 20 8V 60 40 7V 10 20 6V 6V 0 0 0 1 2 3 4 5 6 7 8 0 10 15 20 25 30 VDS - Volts Fig. 3. Output Characteristics @ T J = 125ºC Fig. 4. RDS(on) Normalized to ID = 28A Value vs. Junction Temperature 60 3.0 VGS = 10V 8V VGS = 10V 2.6 R DS(on) - Normalized 50 ID - Amperes 5 VDS - Volts 40 7V 30 20 2.2 I D = 56A 1.8 I D = 28A 1.4 1.0 6V 10 0.6 5V 0 0.2 0 2 4 6 8 10 12 14 16 18 -50 -25 0 VDS - Volts 25 50 75 100 125 150 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 28A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 60 2.6 2.4 VGS = 10V 50 TJ = 125ºC 40 2.0 ID - Amperes R DS(on) - Normalized 2.2 1.8 1.6 30 20 1.4 1.2 10 TJ = 25ºC 1.0 0.8 0 0 20 40 60 80 ID - Amperes © 2014 IXYS CORPORATION, All Rights Reserved 100 120 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXFN56N90P Fig. 7. Input Admittance Fig. 8. Transconductance 90 90 80 80 70 70 50 g f s - Siemens TJ = 125ºC 25ºC - 40ºC 60 ID - Amperes TJ = - 40ºC 40 30 125ºC 50 40 30 20 20 10 10 0 25ºC 60 0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 0 10 20 VGS - Volts 50 60 70 80 90 Fig. 10. Gate Charge 180 10 160 9 VDS = 450V I D = 28A 8 140 I G = 10mA 7 120 VGS - Volts IS - Amperes 40 ID - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode 100 80 60 TJ = 125ºC 6 5 4 3 40 2 TJ = 25ºC 20 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0 1.2 50 100 VSD - Volts 150 200 250 300 350 400 QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Maximum Transient Thermal Impedance 1 100,000 Ciss 10,000 Z (th)JC - ºC / W Capacitance - PicoFarads 30 1,000 Coss 0.1 0.01 100 Crss f = 1 MHz 10 0 5 10 15 20 25 30 35 40 VDS - Volts 0.001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: F_56N90P(99)10-24-08 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. 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