IXFN60N60

HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 60N60 VDSS ID25 RDS(on) = 600 V = 60 A = 75 mW D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G Preliminary data S S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 600 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC= 25°C, Chip capability 60 A IDM TC= 25°C, pulse width limited by TJM IAR A TC= 25°C 60 A EAR TC= 25°C 64 mJ EAS TC= 25°C 4 J £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W 5 V/ns 700 W IS PD TC = 25°C -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 2500 3000 V~ V~ TJ VISOL 50/60 Hz, RMS IISOL £ 1 mA Md Mounting torque Terminal connection torque t = 1 min t=1s 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. Weight Symbol 30 Test Conditions VGS = 0 V, ID = 3 mA 600 VGH(th) VDS = VGS, ID = 8 mA 2 IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) TJ = 25°C TJ = 125°C VGS = 10 V, ID = 0.5 • ID25 Pulse test, t £ 300 ms, duty cycle d £ 2 % IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved g Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VDSS S G 240 dv/dt miniBLOC, SOT-227 B (IXFN) E153432 S D G = Gate S = Source Either Source terminal at miniBLOC can be used as Main or Kelvin Source Features • International standard packages • miniBLOC, with Aluminium nitride isolation • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance • Fast intrinsic Rectifier Applications • DC-DC converters • • V 4.5 V ±200 nA 100 2 mA mA 75 mW D = Drain TAB = Drain • • Battery chargers Switched-mode and resonant-mode power supplies DC choppers Temperature and lighting controls Advantages • Easy to mount • • Space savings High power density 98593B (7/00) 1-2 IXFN 60N60 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs VDS = 15 V; ID = 0.5 • ID25, pulse test 40 C iss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz td(on) tr VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 td(off) RG = 1 W (External), tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 60 S 15000 pF 1600 360 pF pF 43 ns 52 ns 110 ns 26 ns 380 nC 78 nC 190 nC RthJC 0.18 RthCK 0.05 Source-Drain Diode Symbol Test Conditions IS VGS = 0 V ISM VSD t rr QRM IRM K/W K/W M4 screws (4x) supplied Dim. Millimeter Min. Max. Inches Min. Max. A B 31.50 7.80 31.88 8.20 1.240 0.307 1.255 0.323 C D 4.09 4.09 4.29 4.29 0.161 0.161 0.169 0.169 E F 4.09 14.91 4.29 15.11 0.161 0.587 0.169 0.595 G H 30.12 38.00 30.30 38.23 1.186 1.496 1.193 1.505 J K 11.68 8.92 12.22 9.60 0.460 0.351 0.481 0.378 L M 0.76 12.60 0.84 12.85 0.030 0.496 0.033 0.506 N O 25.15 1.98 25.42 2.13 0.990 0.078 1.001 0.084 P Q 4.95 26.54 5.97 26.90 0.195 1.045 0.235 1.059 R S 3.94 4.72 4.42 4.85 0.155 0.186 0.174 0.191 T U 24.59 -0.05 25.07 0.1 0.968 -0.002 0.987 0.004 Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 60 A Repetitive; pulse width limited by TJM 240 A IF = IS, VGS = 0 V, Pulse test, t £ 300 ms, duty cycle d £ 2 % 1.3 V 250 ns mC A IF = 25A, -di/dt = 100 A/ms, VR = 100 V © 2000 IXYS All rights reserved miniBLOC, SOT-227 B 1.5 10 IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-2 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.