IXFN62N80Q3

IXFN62N80Q3 Q3-Class HiperFETTM Power MOSFET VDSS ID25 RDS(on) trr N-Channel Enhancement Mode Fast Intrinsic Rectifier Avalanche Rated = =   800V 49A 140m 300ns miniBLOC E153432 S Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 800 V VDGR TJ = 25C to 150C, RGS = 1M 800 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C IDM TC = 25C, Pulse Width Limited by TJM IA EAS 49 A 180 A TC = 25C TC = 25C 62 5 A J dv/dt IS  IDM, VDD  VDSS, TJ  150C 50 V/ns PD TC = 25C 960 W -55 ... +150 150 -55 ... +150 C C C TJ TJM Tstg VISOL 50/60 Hz, RMS, t = 1minute IISOL 1mA, t = 1s Md Mounting Torque for Base Plate Terminal Connection Torque Weight 2500 3000 V~ V~ 1.5/13 1.3/11.5 Nm/lb.in. Nm/lb.in. 30 g G S D G = Gate S = Source D = Drain Either Source Terminal S can be used as the Source Terminal or the Kelvin Source (Gate Return) Terminal. Features        International Standard Package Low Intrinsic Gate Resistance miniBLOC with Aluminum Nitride Isolation Avalanche Rated Low Package Inductance Fast Intrinsic Rectifier Low RDS(on) and QG Advantages    Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 3mA 800 VGS(th) VDS = VGS, ID = 8mA 3.5 IGSS VGS = 30V, VDS = 0V IDSS VDS = 0.8 • VDSS, VGS = 0V RDS(on) V 6.5 V 200 nA TJ = 125C VGS = 10V, ID = 31A, Note 1 © 2020 IXYS CORPORATION, All Rights Reserved 50 A 4 mA 140 m High Power Density Easy to Mount Space Savings Applications      DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies DC Choppers Temperature and Lighting Controls DS100342B(1/20) IXFN62N80Q3 Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 28 VDS = 20V, ID = 31A, Note 1 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss RGi Gate Input Resistance td(on) Resistive Switching Times tr td(off) tf S 13.6 nF 1260 pF 100 pF 0.13  ns 20 ns 62 ns 11 ns 270 nC 90 nC 120 nC RG = 1 (External) VGS = 10V, VDS = 0.5 • VDSS, ID = 31A Qgd  54 VGS = 10V, VDS = 0.5 • VDSS, ID = 31A Qg(on) Qgs 48 RthJC 0.13C/W RthCS 0.05 C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) IS VGS = 0V ISM VSD trr QRM IRM Note Characteristic Values Min. Typ. Max. 62 A Repetitive, Pulse Width Limited by TJM 250 A IF = IS, VGS = 0V, Note 1 1.5 V IF = 31A, -di/dt = 100A/s 1.6 13.4 VR = 100V, VGS = 0V 300 ns C A 1. Pulse test, t  300s, duty cycle, d  2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFN62N80Q3 Fig. 2. Extended Output Characteristics @ TJ = 25oC Fig. 1. Output Characteristics @ TJ = 25oC VGS = 10V 60 8V 40 I D - Amperes I D - Amperes 50 30 20 120 VGS = 10V 100 9V 80 60 8V 40 7V 10 20 7V 6V 6V 0 0 0 1 2 3 4 5 6 7 0 8 5 10 15 20 25 30 VDS - Volts VDS - Volts Fig. 4. RDS(on) Normalized to ID = 31A Value vs. Junction Temperature Fig. 3. Output Characteristics @ TJ = 125oC 3.0 V GS = 10V 8V 60 VGS = 10V 2.6 RDS(on) - Normalized I D - Amperes 50 40 7V 30 20 2.2 I D = 62A 1.8 I D = 31A 1.4 1.0 6V 10 0.6 5V 0 0.2 0 2.8 2 4 6 8 10 12 14 18 20 -50 -25 0 25 50 75 100 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 31A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature VGS = 10V 2.6 16 125 150 125 150 50 o TJ = 125 C 40 2.2 I D - Amperes R DS(on) - Normalized 2.4 2.0 1.8 1.6 30 20 o 1.4 TJ = 25 C 1.2 10 1.0 0 0.8 0 20 40 60 80 I D - Amperes © 2020 IXYS CORPORATION, All Rights Reserved 100 120 140 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXFN62N80Q3 Fig. 8. Transconductance 100 90 90 80 80 70 70 g f s - Siemens I D - Amperes Fig. 7. Input Admittance 100 60 o TJ = 125 C 50 o 25 C 40 o - 40 C 30 o TJ = - 40 C o 25 C 60 o 50 125 C 40 30 20 20 10 10 0 0 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 0 10 20 30 40 VGS - Volts 50 60 70 80 90 100 I D - Amperes Fig. 10. Gate Charge Fig. 9. Forward Voltage Drop of Intrinsic Diode 200 16 180 14 160 VDS = 400V I D = 31A I G = 10mA 12 120 V GS - Volts I S - Amperes 140 100 80 60 o TJ = 125 C 10 8 6 4 40 o TJ = 25 C 2 20 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 50 100 VSD - Volts 200 250 300 350 400 Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 1000 100,000 RDS(on) Limit 10,000 Ciss 1,000 250µs 100 I D - Amperes Capacitance - PicoFarads 150 QG - NanoCoulombs Coss 10 100 o TJ = 150 C Crss o TC = 25 C Single Pulse f = 1 MHz 10 1ms 1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 10 100 V DS - Volts 1,000 IXFN62N80Q3 Fig. 13. Maximum Transient Thermal Impedance 1 Z (th)JC - K / W 0.1 0.01 0.001 0.0001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2020 IXYS CORPORATION, All Rights Reserved IXYS REF: F_62N80Q3(Q9) 5-20-11 IXFN62N80Q3 SOT-227 Outline J M4-7 NUT (4 PLACES) A B D M N C S L E F G H 0 U IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXFN62N80Q3 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. © 2020 IXYS CORPORATION, All Rights Reserved