IXFN64N50PD3

IXFN64N50PD2 IXFN64N50PD3 PolarHVTM HiPerFET Power MOSFETs Boost & Buck Configurations (Ultra-fast FRED Diode) VDSS ID25 RDS(on) trr 3 3 miniBLOC E153432 4 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 500V = 50A   85m  200ns 1 2 2 D2 2 4 D3 1 1 4 3 Symbol Test Conditions VDSS VDGR TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Maximum Ratings 500 500 V V VGSS VGSM Continuous Transient  30  40 V V ID25 IDM TC = 25C TC = 25C, Pulse Width Limited by TJM 50 200 A A IA EAS TC = 25C TC = 25C 64 2.5 A J dv/dt IS  IDM, VDD  VDSS, TJ  150C 10 V/ns PD TC = 25C 625 W -55 ... +150 150 -55 ... +150 C C C 2500 3000 V~ V~ 1.5/13 1.3/11.5 Nm/lb.in Nm/lb.in 30 g TJ TJM Tstg VISOL 50/60 Hz, RMS, t = 1minute IISOL 1mA, t = 1s Md Mounting Torque for Base Plate Terminal Connection Torque Weight D2 Pin Out: 1 = Source 2 = Gate D3 Pin Out: 1 = Source / Diode Cathode 2 = Gate 3 = Drain 4 = Diode cathode Features  Fast Intrinsic Diode in Boost Configuration  International Standard Package  Encapsulating Epoxy Meets UL 94 V-0, Flammability Classification  miniBLOC with Aluminium Nitride Isolation  Avalanche Rated  Low Package Inductance Advantages     Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS 500 VGS = 0V, ID = 500A VGS(th) VDS = VGS, ID = 8mA IGSS VGS =  30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 32A, Note 1 3.0 V     200 nA TJ = 125C © 2013 IXYS CORPORATION, All Rights Reserved Easy To Mount Space Savings Tightly Coupled FRED Diode High Power Density Applications V 5.5 3 = Drain / Diode anode 4 = Diode cathode 50 A 1 mA 85 m    PFC Circuits Uninterruptible Power Supplies (UPS) Switch-Mode and Resonant-Mode Power Supplies AC and DC Motor Drives High Speed Power Switching Applications Robotics and Servo Controls DS99507G(9/13) IXFN64N50PD2 IXFN64N50PD3 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 20V, ID = 32A, Note 1 30 Ciss Coss 50 S 9700 pF 970 pF 30 pF 30 ns 25 ns 85 ns 22 ns 150 nC 50 nC 50 nC VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 32A RG = 2 (External) Qg(on) Qgs SOT-227B miniBLOC (IXFN) VGS = 10V, VDS = 0.5 • VDSS, ID = 32A Qgd (M4 screws (4x) supplied) 0.20 C/W RthJC RthCS C/W 0.05 Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS VGS = 0V ISM VSD trr QRM IRM Characteristic Values Min. Typ. Max. 64 A Repetitive, Pulse Width Limited by TJM 250 A IF = IS, VGS = 0V, Note 1 1.5 V 200 ns IF = 25A, -di/dt = 100A/s VR = 100V,VGS = 0V 0.6 C 6.0 A FRED Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IF25 TC = 115°C VF IF = 30A, Note 1 IRM IF = 10A, diF/dt = -100A/μs, trr VR = 100V, VGE = 0V Characteristic Values Min. Typ. Max. A 2.5 1.8 2.75 TVJ = 150°C V V TVJ = 100°C 5.5 11.5 A 200 ns 0.9 C/W RthJC RthCS 30 with Heat Transfer Paste 0.25 C/W Note 1. Pulse test, t  300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFN64N50PD2 IXFN64N50PD3 Fig. 2. Extended Output Characteristics @ TJ = 25ºC Fig. 1. Output Characteristics @ TJ = 25ºC 160 70 VGS = 10V 8V 60 VGS = 10V 8V 140 7V 120 I D - Amperes I D - Amperes 50 6V 40 30 100 7V 80 60 6V 20 40 5V 10 20 5V 0 0 0 1 2 3 4 5 6 0 7 5 10 15 VDS - Volts 70 3.2 VGS = 10V 8V 7V VGS = 10V RDS(on) - Normalized I D - Amperes 6V 40 30 2.4 I D = 64A 2.0 I D = 32A 1.6 1.2 5V 10 0.8 0 0.4 0 2 4 6 8 10 12 14 -50 16 -25 0 VDS - Volts 25 50 75 100 125 150 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 32A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 3.4 VGS = 10V 50 3.0 TJ = 125ºC 2.6 40 I D - Amperes R DS(on) - Normalized 30 2.8 50 20 25 Fig. 4. RDS(on) Normalized to ID = 32A Value vs. Junction Temperature Fig. 3. Output Characteristics @ 125ºC 60 20 VDS - Volts 2.2 1.8 30 20 1.4 TJ = 25ºC 10 1.0 0.6 0 0 20 40 60 80 100 I D - Amperes © 2013 IXYS CORPORATION, All Rights Reserved 120 140 160 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXFN64N50PD2 IXFN64N50PD3 Fig. 8. Transconductance 90 80 80 70 70 60 60 g f s - Siemens I D - Amperes Fig. 7. Input Admittance 90 50 TJ = 125ºC 25ºC - 40ºC 40 25ºC 50 125ºC 40 30 30 20 20 10 10 0 TJ = - 40ºC 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 0 20 40 60 VGS - Volts 100 120 140 Fig. 10. Gate Charge Fig. 9. Forward Voltage Drop of Intrinsic Diode 240 10 VDS = 250V 9 200 I D = 32A 8 I G = 10mA 7 160 VGS - Volts I S - Amperes 80 I D - Amperes 120 80 6 5 4 3 TJ = 125ºC 2 40 TJ = 25ºC 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 0 1.5 20 40 60 80 100 120 140 160 QG - NanoCoulombs VSD - Volts Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 1 100,000 Ciss 10,000 Z (th)JC - ºC / W Capacitance - PicoFarads f = 1 MHz 1,000 Coss 0.1 100 Crss 10 0 5 10 15 20 25 30 35 40 VDS - Volts 0.01 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: F_64N50P(9J) 4-27-09 IXFN64N50PD2 IXFN64N50PD3 Figs.13-19 FRED Diode Curves 70 A 60 5 Qr I F 50 30 TVJ= 25°C 1 30 20 1 10 0 2 3 V 10 0 100 4 Fig. 13. Forward current IF versus VF 2.0 400 600 A/s 800 1000 -diF/dt 220 120 TVJ= 100°C VR = 600V V FR t rr TVJ= 100°C IF = 30A V tfr VFR 80 180 IRM 200 Fig. 15. Peak reverse current IRM versus -diF/dt 200 Kf 0 Fig. 14. Reverse recovery charge Qr versus -diF/dt ns 1.5 0 A/s 1000 -diF/dt VF 1.0 IF= 60A IF= 30A IF=15A 40 2 TVJ=100°C 20 0 50 IRM IF= 60A IF= 30A IF= 15A TVJ=150°C TVJ= 100°C VR = 600V A 4 3 40 60 TVJ= 100°C VR = 600V C 0.0 160 40 80 120 C 160 120 0 T VJ 0.4 200 400 600 0 800 1000 A/s 0 200 400 -diF/dt Fig. 16. Dynamic parameters Qr, IRM versus TVJ Fig. 17. Recovery time trr versus -diF/dt 0.0 600 A/s 800 1000 diF/dt Fig. 18. Peak forward voltage VFR and tfr versus diF/dt 2 1 Constants for ZthJC calculation: K/W i Z thJC 0.1 1 2 3 0.01 0.001 0.00001 t fr 0.8 140 Qr 0 s IF= 60A IF= 30A IF=15A 40 0.5 1.2 0.0001 0.001 0.01 Fig. 19 Transient thermal resistance junction to case © 2013 IXYS CORPORATION, All Rights Reserved 0.1 s t 1 Rthi (K/W) ti (s) 0.465 0.179 0.256 0.0052 0.0003 0.0397