IXFN66N85X

Advance Technical Information IXFN66N85X X-Class HiPerFETTM Power MOSFET VDSS ID25 850V 65A  65m RDS(on)  D N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = G S miniBLOC, SOT-227 E153432  S S Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M 850 850 V V VGSS VGSM Continuous Transient  30  40 V V ID25 IDM TC = 25C TC = 25C, Pulse Width Limited by TJM 65 140 A A IA EAS TC = 25C TC = 25C 33 2.5 A J PD TC = 25C 830 W dv/dt IS  IDM, VDD  VDSS, TJ  150°C 50 V/ns -55 ... +150 150 -55 ... +150 C C C TJ TJM Tstg VISOL Md 50/60 Hz, RMS IISOL  1mA t = 1 minute t = 1 second Mounting Torque Terminal Connection Torque Weight G 2500 3000 V~ V~ 1.5/13 1.3/11.5 Nm/lb.in Nm/lb.in 30 g S D G = Gate S = Source D = Drain Features        International Standard Package miniBLOC, with Aluminium Nitride Isolation Isolation Voltage 2500 V~ High Current Handling Capability Fast Intrinsic Diode Avalanche Rated Low RDS(on) Advantages  Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 850 VGS(th) VDS = VGS, ID = 8mA 3.5 IGSS VGS =  30V, VDS = 0V IDSS VDS = VDSS, VGS= 0V RDS(on) VGS = 10V, ID = 33A, Note 1 TJ = 125C © 2016 IXYS CORPORATION, All Rights Reserved   High Power Density Easy to Mount Space Savings V 5.5 V 100 nA 50 A 3 mA 65 m Applications Switch-Mode and Resonant-Mode Power Supplies  DC-DC Converters  PFC Circuits  AC and DC Motor Drives  Robotics and Servo Controls  DS100715(4/16) IXFN66N85X Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max gfs VDS = 10V, ID = 33A, Note 1 25 RGi Gate Input Resistance Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz 42 S 0.75  8900 pF 8900 pF 142 pF 294 1270 pF pF 40 ns 48 ns 105 ns 20 ns 230 nC Crss Co(er) Co(tr) Effective Output Capacitance VGS = 0V Energy related VDS = 0.8 • VDSS Time related td(on) Resistive Switching Times tr td(off) tf VGS = 10V, VDS = 0.5 • VDSS, ID = 33A RG = 1(External) Qg(on) Qgs SOT-227B (IXFN) Outline VGS = 10V, VDS = 0.5 • VDSS, ID = 33A Qgd 53 nC 113 nC RthJC 0.15C/W RthCS 0.05C/W (M4 screws (4x) supplied) Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS VGS = 0V ISM VSD trr QRM IRM Characteristic Values Min. Typ. Max. 66 A Repetitive, Pulse Width Limited by TJM 264 A IF = IS , VGS = 0V, Note 1 1.4 V 250 IF = 33A, -di/dt = 100A/s 2.7 VR = 100V, VGS = 0V ns  μC 21.7 A Note 1. Pulse test, t  300s, duty cycle, d 2%. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFN66N85X Fig. 2. Extended Output Characteristics @ TJ = 25ºC Fig. 1. Output Characteristics @ TJ = 25ºC 180 70 VGS = 10V VGS = 10V 160 9V 60 140 9V 50 120 I D - Amperes I D - Amperes 8V 40 7V 30 8V 100 80 60 20 7V 40 6V 10 20 0 6V 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 0 5 10 15 VDS - Volts 20 25 30 VDS - Volts Fig. 4. RDS(on) Normalized to ID = 33A Value vs. Junction Temperature Fig. 3. Output Characteristics @ TJ = 125ºC 70 3.4 VGS = 10V 8V 2.6 RDS(on) - Normalized I D - Amperes 50 7V 40 30 6V 20 2.2 I D = 66A 1.8 I D = 33A 1.4 1.0 10 0.6 5V 0.2 0 0 1 2 3 4 5 6 7 8 9 -50 10 -25 0 25 50 75 100 125 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 33A Value vs. Drain Current Fig. 6. Normalized Breakdown & Threshold Voltages vs. Junction Temperature 3.5 150 1.3 VGS = 10V 1.2 BV DSS / V GS(th) - Normalized TJ = 125ºC 3.0 R DS(on) - Normalized VGS = 10V 3.0 60 2.5 2.0 TJ = 25ºC 1.5 BVDSS 1.1 1.0 0.9 0.8 VGS(th) 0.7 1.0 0.6 0.5 0.5 0 20 40 60 80 100 120 I D - Amperes © 2016 IXYS CORPORATION, All Rights Reserved 140 160 180 -60 -40 -20 0 20 40 60 80 TJ - Degrees Centigrade 100 120 140 160 IXFN66N85X Fig. 7. Maximum Drain Current vs. Case Temperature Fig. 8. Input Admittance 70 100 90 60 80 70 I D - Amperes I D - Amperes 50 40 30 TJ = 125ºC 25ºC - 40ºC 60 50 40 30 20 20 10 10 0 0 -50 -25 0 25 50 75 100 125 150 3.5 4.0 4.5 5.0 5.5 TC - Degrees Centigrade Fig. 9. Transconductance 6.5 7.0 7.5 8.0 8.5 Fig. 10. Forward Voltage Drop of Intrinsic Diode 90 200 TJ = - 40ºC 80 180 160 70 60 25ºC 50 125ºC 140 I S - Amperes g f s - Siemens 6.0 VGS - Volts 40 30 120 100 80 TJ = 125ºC 60 20 TJ = 25ºC 40 10 20 0 0 0 10 20 30 40 50 60 70 80 90 100 110 0.3 0.4 0.5 0.6 0.7 I D - Amperes 0.8 0.9 1.0 1.1 1.2 1.3 1.4 VSD - Volts Fig. 11. Gate Charge Fig. 12. Capacitance 10 100,000 VDS = 425V Ciss V GS - Volts Capacitance - PicoFarads I D = 33A 8 I G = 10mA 6 4 2 10,000 1,000 Coss 100 10 Crss f = 1 MHz 0 1 0 20 40 60 80 100 120 140 160 180 200 220 240 QG - NanoCoulombs IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 100 VDS - Volts 1000 IXFN66N85X Fig. 13. Output Capacitance Stored Energy Fig. 14. Forward-Bias Safe Operating Area 1000 120 RDS(on) Limit 100 25µs 80 I D - Amperes E OSS - MicroJoules 100 60 100µs 10 40 1 20 1ms TJ = 150ºC TC = 25ºC Single Pulse 10ms 0.1 0 0 100 200 300 400 500 600 10 Fig.700 15. Maximum Impedance 800 900Transient Thermal VDS - Volts 1 100 1,000 VDS - Volts Fig. 15. Maximum Transient Thermal Impedance aaaaa 0.3 Z(th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2016 IXYS CORPORATION, All Rights Reserved IXYS REF: F_66N85X (U8-D901) 4-08-16 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.