IXFN70N120SK

IXFN70N120SK preliminary SiC Power MOSFET ID25 = 68 A VDSS = 1200 V RDS(on) max = 34 mΩ Kelvin Source gate connection KS Part number IXFN70N120SK G D D (3) S Backside: isolated UL pending G (2) KS (1) S (4) Features / Advantages: Applications: Package: SOT-227B (minibloc) • High speed switching with low capacitances • High blocking voltage with low RDS(on) • Easy to parallel and simple to drive • Resistant to latch-up • Real Kelvin source connection • Solar inverters • High voltage DC/DC converters • Motor drives • Switch mode power supplies • UPS • Battery chargers • Induction heating • Isolation Voltage: 3000 V~ • Industry standard outline • RoHS compliant • Epoxy meets UL 94V-0 • Base plate with Aluminium nitride isolation • Advanced power cycling Terms & Conditions of usage The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of your product, please contact your local sales office. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office. Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures. IXYS reserves the right to change limits, test conditions and dimensions. © 2018 IXYS All rights reserved 20180405a 1-7 IXFN70N120SK preliminary MOSFET Ratings Symbol Definitions Conditions min. VDSS drain source breakdown voltage VGS = 0 V, ID = 100 µA 1200 VGSM VGS max transient gate source voltage continous gate source voltage recommended operational value ID25 ID80 ID100 drain current TC = 25°C VGS = 20 V TC = 80°C TC = 100°C RDSon static drain source on resistance ID = 50 A; VGS = 20 V TVJ = 25°C TVJ = 175°C VGS(th) gate threshold voltage ID = 15 mA; VGS = VDS TVJ = 25°C TVJ = 175°C IDSS drain source leakage current VDS = 1200 V; VGS = 0 V TVJ = 25°C IGSS gate source leakage current VDS = 0 V; VGS = 20 V TVJ = 25°C RG internal gate resistance f = 1 MHz, VAC = 25 mV, ESR of CISS Ciss Coss Crss input capacitance output capacitance reverse transfer (Miller) capacitance Qg Qgs Qgd total gate charge gate source charge gate drain (Miller) charge td(on) tr td(off) tf Eon Eoff Erec(off) turn-on delay time current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse reverse recovery losses at turn-off td(on) tr td(off) tf Eon Eoff Erec(off) turn-on delay time current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse reverse recovery losses at turn-off RthJC RthJH thermal resistance junction to case thermal resistance junction to heatsink typ. V -10 -5 2.0 max. +25 +20 V V 68 55 48 A A A 25 52 34 mΩ mΩ 2.6 2.1 4.0 V V 2 100 µA 0.6 µA 1.1 Ω VDS = 1000 V; VGS = 0 V; f = 1 MHz TVJ = 25°C 2790 220 15 pF pF pF VDS = 800 V; ID = 50 A; VGS = -5/20 V TVJ = 25°C 161 46 50 nC nC nC Inductive switching VDS = 800 V; ID = 50 A TVJ = 25°C VGS = -5 / 20 V; RG = 15 Ω (external) Freewheeling diode is Mosfet's body diode 30 15 82 27 1.35 0.76 0.13 ns ns ns ns mJ mJ mJ Inductive switching VDS = 800 V; ID = 50 A TVJ = 150°C VGS = -5 / 20 V; RG = 15 Ω (external) Freewheeling diode is Mosfet's body diode 28 12 125 28 1.71 0.78 0.29 ns ns ns ns mJ mJ mJ 0.45 with heatsink compound; IXYS test setup 0.6 Source-Drain Diode K/W K/W Ratings Symbol Definitions Conditions VSD forward voltage drop IF = 50 A; VGS = -5 V TVJ = 25°C TVJ = 150°C min. trr QRM IRM dIF/dt reverse recovery time reverse recovery charge (intrinsic diode) max. reverse recovery current current slew rate VGS = -5 V; IF = 50 A; VR = 800 V Mosfet gate drive: VGS = -5 / 20 V; RG = 15 Ω TVJ = 25°C trr QRM IRM dIF/dt reverse recovery time reverse recovery charge (intrinsic diode) max. reverse recovery current current slew rate VGS = -5 V; IF = 50 A; VR = 800 V Mosfet gate drive: VGS = -5 / 20 V; RG = 15 Ω TVJ = 150°C typ. max. 4.3 3.7 V V 35 0.52 33 3380 ns µC A A/µs 30 1.23 59 4250 ns µC A A/µs Note: When using SiC Body Diode the maximum recommended VGS = -5V IXYS reserves the right to change limits, test conditions and dimensions. © 2018 IXYS All rights reserved 20180405a 2-7 IXFN70N120SK preliminary Package SOT-227B (minibloc) min. Ratings typ. max. storage temperature operation temperature virtual junction temperature -40 -40 -40 150 150 175 °C °C °C MD mounting torque 1.1 1.5 Nm MT terminal torque 1.1 1.5 Symbol IRMS Definitions RMS current Tstg Top TVJ Conditions per terminal Weight 30 dSpp/App dSpb/Apb creepage distance on surface | striking distance through air VISOL isolation voltage terminal to backside terminal to terminal Unit A g Nm 10.5 / 3.2 8.6 / 6.8 mm mm 3000 2500 V V IISOL < 1 mA; 50/60 Hz, t = 1 sec. t = 1 minute Product Marking Part No. Logo XXXXX yywwZ ® abcd DateCode Assembly Line Assembly Code Ordering Part Name Marking on Product Standard IXFN70N120SK IXFN70N120SK IXYS reserves the right to change limits, test conditions and dimensions. © 2018 IXYS All rights reserved Delivering Mode Base Qty Ordering Code Tube 10 517981 20180405a 3-7 IXFN70N120SK preliminary Outlines SOT-227B (minibloc) D (3) G (2) KS (1) S (4) IXYS reserves the right to change limits, test conditions and dimensions. © 2018 IXYS All rights reserved 20180405a 4-7 IXFN70N120SK preliminary Curves 150 150 20 V 18 V 16 V 14 V 12 V 100 12 V 20 V 18 V 16 V 14 V 100 VGS = 10 V ID ID VGS = 10 V [A] [A] 50 50 TVJ = 25°C TVJ = -25°C 0 0 0 1 2 3 4 5 6 7 8 9 10 0 1 2 3 4 5 VDS [V] 6 7 8 9 10 VDS [V] Fig. 1 Typical output characteristics (-25°C) Fig. 2 Typical output characteristics (25°C) 150 2.5 VGS = 20 V 20 V 18 V 16 V 14 V TVJ = 150°C 100 A 2.0 12 V 100 ID = 50 A 1.5 VGS = 10 V ID RDS(on) normalized [A] 1.0 50 0.5 0 0 1 2 3 4 5 6 7 8 9 0.0 -25 10 0 25 50 VDS [V] 75 100 125 150 175 TVJ [°C] Fig. 4 RDS(on) normalized vs. junction temperature TVJ Fig. 3 Typical output characteristics (150°C) 80 80 VGS = 20 V ID = 50 A 60 60 TVJ = 150°C RDS(on) VGS = 14 V 16 V 18 V 20 V RDS(on) 40 40 [mOhm] [mOhm] 25°C -25°C 20 0 0 25 50 75 100 125 150 IDS [A] Fig. 5 RDS(on) versus drain current IXYS reserves the right to change limits, test conditions and dimensions. © 2018 IXYS All rights reserved 20 0 -25 0 25 50 75 100 125 150 175 TVJ [°C] Fig. 6 RDS(on) versus junction temperature TVJ 20180405a 5-7 IXFN70N120SK preliminary Curves 1.4 3.2 150 VDS = 20 V 3.0 1.2 2.8 VDSS IDSS = 0.1 mA VDSS 100 2.6 VTH 1.0 2.4 normalized 2.2 [V] TVJ = 150°C ID [A] 25°C 50 0.8 0.6 -25 1.8 IDSS = 15 mA 0 25 50 75 100 -55°C 2.0 VTH 125 150 1.6 175 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 TVJ [°C] VGS [V] Fig. 7 Norm. breakdow VDSS & treshhold voltage VTH Fig. 8 Typical transfer characteristics versus junction temperature TVJ 50 0 TVJ = -25°C TVJ = -25°C -25 40 25°C 150°C -50 30 gfs IDS -5 V -2 V -75 [S] [V] 20 VGS = 0 V -100 10 -125 0 -150 0 10 20 30 40 50 60 70 80 -9 90 100 -8 -7 -6 ID [A] -5 -4 -3 -2 -1 0 VDS [V] Fig. 10 Forward voltage drop of intrinsic diode versus VDS measured at -55°C Fig. 9 Typical forward transconductance 0 0 TVJ = 150°C TVJ = 25°C -25 -25 -50 -50 IDS -75 -75 -2 V VGS = 0 V [V] VGS = 0 V -100 -2 V IDS -5 V [V] -5 V -100 -125 -125 -150 -150 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 VDS [V] VDS [V] Fig. 11 Forward voltage drop of intrinsic diode versus VDS measured at 25°C Fig. 12 Forward voltage drop of intrinsic diode versus VDS measured at 150°C IXYS reserves the right to change limits, test conditions and dimensions. © 2018 IXYS All rights reserved 20180405a 6-7 IXFN70N120SK preliminary Curves 3.0 5 RG = 15 Ω TVJ = 150°C VDS = 800 V VGS = -5/20 V 4 RG = 15 Ω VDS = 800 V VGS = -5/20 V ID = 50 A 2.5 2.0 3 Erec x10 E E Eon 1.5 Erec x10 [mJ] 2 [mJ] 1.0 1 Eon 0.5 Eoff 0 0 10 Eoff 20 30 40 50 60 70 80 0.0 20 90 100 40 60 80 ID [A] Fig. 13 Typical switching energy versus drain current ID = 50 A TVJ = 150°C VDS = 800 V VGS = -5/20 V 2.5 120 140 Eon ID = 50 A TVJ = 150°C VDS = 800 V VGS = -5/20 V 200 160 2.0 E t Eoff 1.5 120 td(off) [ns] [mJ] 1.0 80 0.5 40 td(on) Erec 0.0 6 12 18 24 30 6 36 12 18 30 36 Fig. 16 Typical switching time versus external gate resistor 0.7 ID = 40 A TVJ = 25°C 15 VDS = 800 V IGS = 10 mA [V] 24 RG [Ω] Fig. 15 Typical switching energy versus external gate resistor 20 tf tr 0 RG [Ω] VGS 160 Fig. 14 Typical switching energy versus temperature 240 3.0 100 TVJ [°C] 0.6 0.5 10 Zth(J-H) 0.4 [K/W] 0.3 5 0.2 0 0.1 -5 0 20 40 60 80 100 120 140 160 180 QG [nC] Fig. 17 Typical turn on gate charge, trendline IXYS reserves the right to change limits, test conditions and dimensions. © 2018 IXYS All rights reserved 0.0 1 10 100 1000 10000 tp [ms] Fig. 18 Typical transient thermal impedance 20180405a 7-7