IXFN74N100X

Advance Technical Information IXFN74N100X X-Class HiPerFETTM Power MOSFET VDSS ID25 1000V 74A  66m RDS(on)  D N-Channel Enhancement Mode Avalanche Rated = = G S miniBLOC, SOT-227 E153432  S S G Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M 1000 1000 V V VGSS VGSM Continuous Transient  30  40 V V ID25 IDM TC = 25C TC = 25C, Pulse Width Limited by TJM 74 150 A A IA EAS TC = 25C TC = 25C 37 2 A J PD TC = 25C 1170 W dv/dt IS  IDM, VDD  VDSS, TJ  150°C 50 V/ns -55 ... +150 150 -55 ... +150 C C C TJ TJM Tstg VISOL Md 50/60 Hz, RMS IISOL  1mA t = 1 minute t = 1 second Mounting Torque Terminal Connection Torque Weight 2500 3000 V~ V~ 1.5/13 1.3/11.5 Nm/lb.in Nm/lb.in 30 g S D G = Gate S = Source D = Drain Features       International Standard Package miniBLOC, with Aluminium Nitride Isolation Isolation Voltage 2500V~ High Current Handling Capability Avalanche Rated Low RDS(on) Advantages   Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 3mA 1000 VGS(th) VDS = VGS, ID = 8mA 3.5 IGSS VGS =  30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 37A, Note 1  V 5.5 V 200 nA High Power Density Easy to Mount Space Savings Applications Switch-Mode and Resonant-Mode Power Supplies  DC-DC Converters  PFC Circuits  AC and DC Motor Drives  Robotics and Servo Controls  TJ = 125C ©2019 IXYS CORPORATION, All Rights Reserved 50 A 5 mA 66 m DS100957A(3/19) IXFN74N100X Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max gfs VDS = 20V, ID = 37A, Note 1 30 RGi Gate Input Resistance 53 S 0.56  17 nF 2450 pF 48 pF 400 1900 pF pF 84 ns Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss Co(er) Co(tr) Effective Output Capacitance VGS = 0V Energy related VDS = 0.8 • VDSS Time related td(on) Resistive Switching Times tr td(off) tf VGS = 10V, VDS = 0.5 • VDSS, ID = 37A RG = 1(External) Qg(on) Qgs SOT-227B miniBLOC (IXFN) VGS = 10V, VDS = 0.5 • VDSS, ID = 37A Qgd 28 ns 184 ns 28 ns 425 nC 124 nC 230 nC RthJC 0.107C/W RthCS 0.05C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS VGS = 0V ISM VSD trr QRM IRM Characteristic Values Min. Typ. Max. 74 A Repetitive, Pulse Width Limited by TJM 296 A IF = IS , VGS = 0V, Note 1 1.4 V 290 IF = 37A, -di/dt = 300A/s 5.7 VR = 100V, VGS = 0V ns  μC 39.0 A Note 1. Pulse test, t  300s, duty cycle, d 2%. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFN74N100X o o Fig. 2. Extended Output Characteristics @ TJ = 25 C Fig. 1. Output Characteristics @ TJ = 25 C 80 240 VGS = 10V 70 VGS = 10V 9V 200 160 50 I D - Amperes I D - Amperes 60 8V 40 30 7V 9V 120 8V 80 20 7V 40 10 6V 0 5V 6V 0 1 2 3 4 0 5 6 0 5 10 15 20 VDS - Volts 25 30 35 40 45 VDS - Volts Fig. 4. RDS(on) Normalized to ID = 37A Value vs. Junction Temperature o Fig. 3. Output Characteristics @ TJ = 125 C 80 3.0 VGS = 10V 70 VGS = 10V 2.6 8V RDS(on) - Normalized I D - Amperes 60 50 7V 40 30 6V 20 I D = 74A 1.8 I D = 37A 1.4 1.0 0.6 10 5V 0.2 0 0 4.5 2 4 6 8 10 12 -50 14 -25 0 25 50 75 100 125 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 37A Value vs. Drain Current Fig. 6. Normalized Breakdown & Threshold Voltages vs. Junction Temperature 1.2 150 VGS = 10V 4.0 BVDSS / VGS(th) - Normalized 1.1 3.5 RDS(on) - Normalized 2.2 o TJ = 125 C 3.0 2.5 2.0 o TJ = 25 C 1.5 BVDSS 1.0 0.9 VGS(th) 0.8 0.7 1.0 0.5 0.6 0 20 40 60 80 100 120 140 I D - Amperes ©2019 IXYS CORPORATION, All Rights Reserved 160 180 200 220 -60 -40 -20 0 20 40 60 80 TJ - Degrees Centigrade 100 120 140 160 IXFN74N100X Fig. 8. Input Admittance Fig. 7. Maximum Drain Current vs. Case Temperature 100 80 90 70 VDS = 20V 80 60 o 70 I D - Amperes 50 I D - Amperes o - 40 C 40 30 25 C 60 o TJ = 125 C 50 40 30 20 20 10 10 0 0 -50 -25 0 25 50 75 100 125 150 3.5 4.0 4.5 5.0 5.5 TC - Degrees Centigrade Fig. 9. Transconductance 6.5 7.0 7.5 8.0 8.5 Fig. 10. Forward Voltage Drop of Intrinsic Diode 120 240 o VDS = 20V TJ = - 40 C 100 200 80 160 I S - Amperes g f s - Siemens 6.0 VGS - Volts o 25 C 60 o 125 C 40 120 o TJ = 125 C 80 o TJ = 25 C 20 40 0 0 0 10 20 30 40 50 60 70 80 90 100 0.3 0.4 0.5 0.6 0.7 I D - Amperes Fig. 11. Gate Charge 0.9 1.0 1.1 1.2 1.3 Fig. 12. Capacitance 16 100,000 VDS = 500V 14 Capacitance - PicoFarads I D = 37A I G = 10mA 12 V GS - Volts 0.8 VSD - Volts 10 8 6 4 10,000 Ciss 1,000 Coss 100 10 2 f = 1 MHz 0 Crss 1 0 50 100 150 200 250 300 350 400 450 500 550 600 QG - NanoCoulombs IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 100 VDS - Volts 1,000 IXFN74N100X Fig. 14. Forward-Bias Safe Operating Area Fig. 13. Output Capacitance Stored Energy 1000 240 200 RDS(on) Limit 25μs 160 I D - Amperes E OSS - MicroJoules 100 120 100μs 10 80 1 1ms o TJ = 150 C 40 o TC = 25 C Single Pulse Fig. 15. Maximum Transient Thermal Impedance 01 10ms DC 0.1 0 100 200 300 400 500 600 700 800 900 1000 1 10 VDS - Volts 100 1,000 VDS - Volts Fig. 15. Maximum Transient Thermal Impedance aaaaa 0.2 Z(th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds ©2019 IXYS CORPORATION, All Rights Reserved IXYS REF: F_74N100X (U9-DA01) 3-26-19 IXFN74N100X Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.