IXFN80N50P

PolarHVTM HiPerFET Power MOSFET IXFN 80N50P VDSS ID25 RDS(on) trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ 500 500 V V VGS VGSM Transient Continuous ± 40 ± 30 V V ID25 IDM TC = 25° C TC = 25° C, pulse width limited by TJM 66 200 A A IAR EAR EAS TC = 25° C TC = 25° C TC = 25° C 80 80 3.0 A mJ J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤150° C, RG = 2 Ω 10 V/ns PD TC = 25° C 700 W Maximum Ratings -55 ... +150 150 -55 ... +150 °C °C °C 300 °C 2500 V~ TJ TJM Tstg TL 1.6 mm (0.062 in.) from case for 10 s VISOL 50/60 Hz; IISOL ≤1 Md Mounting torque Terminal connection torque (M4) mA 1.5/13 Nm/ib.in. 1.5/13 Nm/ib.in. Weight 30 Symbol Test Conditions (TJ = 25° C unless otherwise specified) g Characteristic Values Min. Typ. Max. BVDSS VGS = 0 V, ID = 500 µA 500 VGS(th) VDS = VGS, ID = 8 mA 3.0 IGSS VGS = ± 30 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 0.5 ID25, Note 1 © 2006 IXYS All rights reserved = 500 V = 66 A Ω ≤ 65 mΩ ≤ 200 ns TJ = 125° C V 5.0 V ± 200 nA 25 1 µA mA 65 mΩ miniBLOC, SOT-227 B (IXFN) E153432 S G S D G = Gate S = Source D = Drain Either source tab S can be used forsource current or Kelvin gate return. Features l Fast intrinsic diode l International standard package l Unclamped Inductive Switching (UIS) rated l UL recognized. l Isolated mounting base Advantages l Easy to mount l Space savings l High power density DS99477E(01/06) IXFN 80N50P Symbol Test Conditions Characteristic Values (TJ = 25° C unless otherwise specified) Min. Typ. Max. gfs VDS= 20 V; ID = 0.5 ID25, Note 1 35 Ciss 70 S 12.7 nF 1280 pF Crss 120 pF td(on) 25 ns Coss VGS = 0 V, VDS = 25 V, f = 1 MHz tr VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5*ID25 27 ns td(off) RG = 2 Ω (External) 70 ns 18 ns 195 nC 70 nC 64 nC tf Qg(on) Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgd RthJC miniBLOC, SOT-227B (IXFN) Outline 0.18° C/W RthCK ° C/W 0.05 Source-Drain Diode Characteristic Values TJ = 25° C unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0 V 80 A ISM Repetitive 200 A VSD IF = IS, VGS = 0 V, Note 1 1.5 V trr IF = 25 A, -di/dt = 100 A/µs 200 ns QRM VR = 100 V, VGS = 0 V 0.8 µC 8 A IRM Note 1: Pulse test, t ≤300 µs, duty cycle d ≤ 2 % IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6771478 B2 IXFN 80N50P Fig. 1. Output Characte r is tics Fig. 2. Exte nde d Output Char acte ris tics @ 25° C V GS = 10V 70 V GS = 10V 160 8V 60 8V 140 7V 120 50 I D - Amperes I D - Amperes @ 25° C 180 80 40 30 6V 20 7V 100 80 60 6V 40 10 20 5V 5V 0 0 0 1 2 3 4 5 6 0 3 6 9 V D S - V olts Fig. 3. Output Characte r is tics 80 18 21 24 27 3.4 V GS = 10V 70 3.1 R D S ( o n ) - Normalized 7V 60 I D - Amperes 15 Fig. 4. RDS(on ) Norm alize d to ID = 40A V alue vs . Junction Te m pe rature @ 125° C 6V 50 40 30 20 5V 10 V GS = 10V 2.8 2.5 2.2 I D = 80A 1.9 1.6 I D = 40A 1.3 1 0.7 0 0.4 0 2 4 6 8 10 12 14 -50 -25 V D S - V olts 0 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Norm alize d to ID = 40A V alue vs . Drain Curr e nt Fig. 6. Dr ain Cur r e nt vs . Cas e T e m p e r atur e 3.2 70 3 V GS = 10V 60 TJ = 125 ° C 2.8 2.6 50 2.4 I D - Amperes R D S ( o n ) - Normalized 12 V D S - V olts 2.2 2 1.8 1.6 1.4 1.2 TJ = 25 ° C 1 40 30 20 10 0.8 0 0 20 40 60 80 100 120 I D - A mperes © 2006 IXYS All rights reserved 140 160 180 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 IXFN 80N50P Fig. 8. Transconductance 140 140 120 120 100 100 80 g f s - Siemens I D - Amperes Fig. 7. Input Adm ittance TJ = 125°C 25°C 60 -40°C TJ = -40°C 25°C 125°C 80 60 40 40 20 20 0 0 4 4.5 5 5.5 6 6.5 7 0 7.5 20 40 V G S - Volts Fig. 9. Source Current vs. Source-To-Drain Voltage 80 100 120 140 Fig. 10. Gate Charge 10 250 VDS = 250V 9 VG S - Volts 200 I S - Amperes 60 I D - Amperes 150 100 8 I D = 40A 7 I G = 10mA 6 5 4 3 TJ = 125°C 50 2 TJ = 25°C 1 0 0 0.4 0.6 0.8 1 1.2 1.4 1.6 0 20 40 60 V S D - Volts 80 100 120 140 160 180 200 Q G - NanoCoulombs Fig. 12. Forw ard-Bias Safe Operating Area Fig. 11. Capacitance 100000 1000 R DS(on) Limit 10000 C iss I D - Amperes Capacitance - PicoFarads f = 1MHz 1000 C oss 100 25µs 100µs 1ms 10 100 TJ = 150°C C rss DC 10ms TC = 25°C 10 1 0 5 10 15 20 25 30 35 40 V D S - Volts IXYS reserves the right to change limits, test conditions, and dimensions. 10 100 V D S - Volts 1000 IXFN 80N50P Fig. 13. Maxim um Transient Therm al Resistance R ( t h ) J C - ºC / W 1.00 0.10 0.01 0.0001 0.001 0.01 0.1 Pulse Width - Seconds © 2006 IXYS All rights reserved 1 10 Disclaimer Notice - Information furnished is believed to be accurate and reliable. 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