IXFN82N60P

IXFN82N60P PolarTM HiPerFETTM Power MOSFET VDSS ID25 RDS(on) trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier S Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 600 V VGSS Continuous ±30 V VGSM Transient ±40 V ID25 TC = 25°C IDM TC = 25°C, Pulse Width Limited by TJM IA EAS G 72 A 200 A TC = 25°C TC = 25°C 82 5 A J dv/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 20 V/ns PD TC = 25°C 1040 W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 °C °C 2500 3000 V~ V~ 1.5/13 1.3/11.5 Nm/lb.in. Nm/lb.in. 30 g TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s VISOL 50/60 Hz, RMS, t = 1minute IISOL ≤ 1mA, t = 1s Md 600V 72A Ω 75mΩ 200ns miniBLOC E153432 Symbol TJ TJM Tstg = = ≤ ≤ Mounting Torque for Base Plate Terminal Connection Torque Weight S D G = Gate S = Source D = Drain Either Source Terminal S can be used as the Source Terminal or the Kelvin Source (Gate Return) Terminal. Features z z z z z z z z International Standard Package miniBLOC, with Aluminium Nitride Isolation Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance Advantages z z Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 3mA 600 VGS(th) VDS = VGS, ID = 8mA 3.0 IGSS VGS = ±30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 41A, Note 1 V 5.0 V ±200 nA TJ = 125°C © 2012 IXYS CORPORATION, All Rights Reserved 50 μA 1 mA Applications z z z z z 75 mΩ Easy to Mount Space Savings z DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies Uninterrupted Power Supplies AC Motor Drives High Speed Power Switching Applications DS99559F(07/12) IXFN82N60P Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 50 VDS = 20V, ID = 41A, Note 1 80 S 23 nF 1490 pF 200 pF 28 ns 23 ns 79 ns 24 ns 240 nC 96 nC 67 nC Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 41A RG = 1Ω (External) Qg(on) Qgs SOT-227B (IXFN) Outline VGS = 10V, VDS = 0.5 • VDSS, ID = 41A Qgd (M4 screws (4x) supplied) 0.12 °C/W RthJC RthCS 0.05 °C/W Source-Drain Diode Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) IS VGS = 0V ISM Characteristic Values Min. Typ. Max. 82 A Repetitive, Pulse Width Limited by TJM 200 A VSD IF = IS, VGS = 0V, Note 1 1.5 V trr QRM IRM IF = 25A, -di/dt = 100A/μs Note 1. 0.6 6.0 VR = 100V, VGS = 0V 200 ns μC A Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFN82N60P Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC 180 80 VGS = 10V 8V VGS = 10V 8V 160 70 140 7V ID - Amperes ID - Amperes 60 50 40 6V 30 7V 120 100 80 60 6V 20 40 10 20 5V 5V 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 0 5 10 15 20 VDS - Volts VDS - Volts Fig. 4. RDS(on) Normalized to ID = 41A Value vs. Junction Temperature Fig. 3. Output Characteristics @ T J = 125ºC 3.2 80 VGS = 10V 7V R DS(on) - Normalized ID - Amperes 60 VGS = 10V 2.8 70 6V 50 40 30 2.4 I D = 82A 2.0 I D = 41A 1.6 1.2 20 5V 0.8 10 0 0.4 0 2 4 6 8 10 12 14 -50 -25 0 VDS - Volts Fig. 5. RDS(on) Normalized to ID = 41A Value vs. Drain Current 50 75 100 125 150 125 150 Fig. 6. Maximum Drain Current vs. Case Temperature 3.2 80 VGS = 10V 2.8 70 TJ = 125ºC 60 2.4 ID - Amperes R DS(on) - Normalized 25 TJ - Degrees Centigrade 2 1.6 50 40 30 TJ = 25ºC 20 1.2 10 0 0.8 0 20 40 60 80 100 120 ID - Amperes © 2012 IXYS CORPORATION, All Rights Reserved 140 160 180 -50 -25 0 25 50 75 TJ - Degrees Centigrade 100 IXFN82N60P Fig. 8. Transconductance Fig. 7. Input Admittance 160 120 TJ = - 40ºC 100 120 80 g f s - Siemens ID - Amperes 140 TJ = 125ºC 25ºC - 40ºC 60 25ºC 100 125ºC 80 60 40 40 20 20 0 0 3.5 4 4.5 5 5.5 6 6.5 7 0 20 40 60 VGS - Volts 80 100 120 140 ID - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 250 10 9 200 VDS = 300V I D = 41A 8 I G = 10mA VGS - Volts IS - Amperes 7 150 100 TJ = 125ºC 6 5 4 3 TJ = 25ºC 50 2 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 0 1.3 20 40 VSD - Volts 60 80 100 120 140 160 180 200 220 240 QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area 1,000 100,000 RDS(on) Limit Ciss 10,000 ID - Amperes Capacitance - PicoFarads f = 1 MHz Coss 100 100µs 1ms 10 1,000 10ms DC TJ = 150ºC Crss TC = 25ºC Single Pulse 100 1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 10 100 VDS - Volts 1000 IXFN82N60P Fig. 13. Maximum Transient Thermal Resistance Z (th)JC - ºC / W 1 0.1 0.01 0.001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2012 IXYS CORPORATION, All Rights Reserved IXYS REF: F_82N60P(9S) 07-17-12-A Disclaimer Notice - Information furnished is believed to be accurate and reliable. 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