IXFN82N60Q3

IXFN82N60Q3 Q3-Class HiperFETTM Power MOSFET VDSS ID25 RDS(on) trr = =   600V 66A 75m 300ns N-Channel Enhancement Mode Fast Intrinsic Rectifier miniBLOC E153432 S Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 600 V VDGR TJ = 25C to 150C, RGS = 1M 600 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C 66 A IDM TC = 25C, Pulse Width Limited by TJM 240 A IA EAS TC = 25C TC = 25C 82 4 A J dv/dt IS  IDM, VDD  VDSS, TJ  150C 50 V/ns PD TC = 25C 960 W -55 ... +150 150 -55 ... +150 C C C 2500 3000 V~ V~ 1.5/13 1.3/11.5 Nm/lb.in. Nm/lb.in. 30 g TJ TJM Tstg VISOL 50/60 Hz, RMS, t = 1minute IISOL 1mA, t = 1s Md Mounting Torque for Base Plate Terminal Connection Torque Weight G S D G = Gate S = Source D = Drain Either Source Terminal S can be used as the Source Terminal or the Kelvin Source (Gate Return) Terminal. Features       International Standard Package Low Intrinsic Gate Resistance miniBLOC with Aluminum Nitride Isolation Low Package Inductance Fast Intrinsic Rectifier Low RDS(on) and QG Advantages    Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 3mA 600 VGS(th) VDS = VGS, ID = 8mA 3.5 IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 41A, Note 1 Applications V 6.5 V 200 nA TJ = 125C © 2020 IXYS CORPORATION, All Rights Reserved High Power Density Easy to Mount Space Savings 50 A 3 mA      DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies DC Choppers Temperature and Lighting Controls 75 m DS100340A(1/20) IXFN82N60Q3 Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 33 VDS = 20V, ID = 41A, Note 1 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss RGi Gate Input Resistance td(on) Resistive Switching Times tr td(off) tf S 13.5 nF 1450 pF 120 pF 0.12  ns 13 ns 60 ns 14 ns 275 nC 88 nC 120 nC RG = 1 (External) VGS = 10V, VDS = 0.5 • VDSS, ID = 41A Qgd  40 VGS = 10V, VDS = 0.5 • VDSS, ID = 41A Qg(on) Qgs 55 RthJC 0.13C/W RthCS 0.05 C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) IS VGS = 0V ISM VSD trr QRM IRM Note Characteristic Values Min. Typ. Max. 82 A Repetitive, Pulse Width Limited by TJM 330 A IF = IS, VGS = 0V, Note 1 1.5 V IF = 41A, -di/dt = 100A/s 1.9 15.4 VR = 100V, VGS = 0V 300 ns C A 1. Pulse test, t  300s, duty cycle, d  2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFN82N60Q3 Fig. 1. Output Characteristics @ TJ = 25oC 80 Fig. 2. Extended Output Characteristics @ TJ = 25oC VGS = 10V VGS = 10V 9V 160 70 140 8V 120 I D - Amperes I D - Amperes 60 50 40 7V 30 100 8V 80 60 7V 40 20 10 20 6V 5V 0 0 1 2 3 4 5 6V 0 6 0 7 5 10 15 20 25 30 VDS - Volts VDS - Volts Fig. 3. Output Characteristics @ TJ = 125oC Fig. 4. RDS(on) Normalized to ID = 41A Value vs. Junction Temperature 3.0 V GS = 10V 8V 80 VGS = 10V 2.6 70 RDS(on) - Normalized 7V I D - Amperes 60 50 40 6V 30 2.2 I D = 82A 1.8 I D = 41A 1.4 1.0 20 10 0.6 5V 4V 0 0 2.8 2 4 6 8 10 0.2 14 16 -50 -25 0 25 50 75 100 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 41A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature VGS = 10V 2.6 12 125 150 125 150 70 o TJ = 125 C 60 50 2.2 I D - Amperes R DS(on) - Normalized 2.4 2.0 1.8 1.6 40 30 o TJ = 25 C 1.4 20 1.2 10 1.0 0 0.8 0 20 40 60 80 100 120 I D - Amperes © 2020 IXYS CORPORATION, All Rights Reserved 140 160 180 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXFN82N60Q3 Fig. 8. Transconductance Fig. 7. Input Admittance 100 100 90 90 80 80 70 70 g f s - Siemens I D - Amperes o 60 o TJ = 125 C 50 o 25 C o - 40 C 40 o 25 C 60 o 125 C 50 40 30 30 20 20 10 10 0 TJ = - 40 C 0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 0 10 20 30 40 VGS - Volts 60 70 80 90 100 Fig. 10. Gate Charge Fig. 9. Forward Voltage Drop of Intrinsic Diode 320 16 280 14 240 12 200 10 V GS - Volts I S - Amperes 50 I D - Amperes 160 120 VDS = 300V I D = 41A I G = 10mA 8 6 o TJ = 125 C 80 4 o TJ = 25 C 40 2 0 0 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 0 50 100 VSD - Volts 150 200 250 300 350 400 QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area 1000 100,000 f = 1 MHz 10,000 Ciss 1,000 100 25µs I D - Amperes Capacitance - PicoFarads RDS(on) Limit Coss 100µs 10 100 o TJ = 150 C Crss o TC = 25 C Single Pulse 10 1ms 1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 10 100 VDS - Volts 1,000 IXFN82N60Q3 Fig. 13. Maximum Transient Thermal Impedance 1 Z (th)JC - K / W 0.1 0.01 0.001 0.0001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2020 IXYS CORPORATION, All Rights Reserved IXYS REF: F_82N60Q3(Q9) 5-19-11 IXFN82N60Q3 SOT-227 Outline J M4-7 NUT (4 PLACES) A B D M N C S L E F G H 0 U IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXFN82N60Q3 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. © 2020 IXYS CORPORATION, All Rights Reserved