IXFN90N85X

IXFN90N85X X-Class HiPerFETTM Power MOSFET VDSS ID25 850V 90A  41m RDS(on)  D N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = G S miniBLOC, SOT-227 E153432  S S Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M 850 850 V V VGSS VGSM Continuous Transient  30  40 V V ID25 IDM TC = 25C TC = 25C, Pulse Width Limited by TJM 90 180 A A IA EAS TC = 25C TC = 25C 45 4 A J PD TC = 25C 1200 W dv/dt IS  IDM, VDD  VDSS, TJ  150°C 50 V/ns -55 ... +150 150 -55 ... +150 C C C TJ TJM Tstg VISOL Md 50/60 Hz, RMS IISOL  1mA t = 1 minute t = 1 second Mounting Torque Terminal Connection Torque Weight G 2500 3000 V~ V~ 1.5/13 1.3/11.5 Nm/lb.in Nm/lb.in 30 g S D G = Gate S = Source D = Drain Features        International Standard Package miniBLOC, with Aluminium Nitride Isolation Isolation Voltage 2500V~ High Current Handling Capability Fast Intrinsic Diode Avalanche Rated Low RDS(on) Advantages  Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 3mA 850 VGS(th) VDS = VGS, ID = 8mA 3.5 IGSS VGS =  30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 45A, Note 1 TJ = 125C © 2019 IXYS CORPORATION, All Rights Reserved   High Power Density Easy to Mount Space Savings V 5.5 V 200 nA 50 A 5 mA 41 m Applications Switch-Mode and Resonant-Mode Power Supplies  DC-DC Converters  PFC Circuits  AC and DC Motor Drives  Robotics and Servo Controls  DS100723A(11/19) IXFN90N85X Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max gfs VDS = 10V, ID = 45A, Note 1 37 RGi Gate Input Resistance Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss Co(er) Co(tr) Effective Output Capacitance VGS = 0V Energy related VDS = 0.8 • VDSS Time related td(on) Resistive Switching Times tr td(off) tf VGS = 10V, VDS = 0.5 • VDSS, ID = 45A RG = 1(External) Qg(on) Qgs 62 S 0.60  13.3 nF 13.0 nF 220 pF 395 1820 pF pF 50 ns 20 ns 126 ns 8 ns 340 nC VGS = 10V, VDS = 0.5 • VDSS, ID = 45A Qgd 78 nC 190 nC RthJC 0.104C/W RthCS 0.05C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS VGS = 0V ISM VSD trr QRM IRM Characteristic Values Min. Typ. Max. 90 A Repetitive, Pulse Width Limited by TJM 360 A IF = IS , VGS = 0V, Note 1 1.4 V 250 IF = 45A, -di/dt = 200A/s 5.3 VR = 100V, VGS = 0V 42.0 ns  μC A Note 1. Pulse test, t  300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFN90N85X o o Fig. 2. Extended Output Characteristics @ TJ = 25 C Fig. 1. Output Characteristics @ TJ = 25 C 240 90 VGS = 10V 9V 80 VGS = 10V 9V 200 70 8V 160 I D - Amperes I D - Amperes 60 50 7V 40 8V 120 80 30 7V 20 40 6V 10 6V 5V 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 0 5 10 VDS - Volts 15 20 25 VDS - Volts Fig. 4. RDS(on) Normalized to ID = 45A Value vs. Junction Temperature o Fig. 3. Output Characteristics @ TJ = 125 C 90 3.4 VGS = 10V 80 70 I D - Amperes RDS(on) - Normalized 2.6 60 7V 50 40 6V 30 2.2 I D = 90A 1.8 I D = 45A 1.4 1.0 20 0.6 5V 10 0.2 0 0 3.4 1 2 3 4 5 6 7 8 -50 9 -25 0 25 50 75 100 125 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 45A Value vs. Drain Current Fig. 6. Normalized Breakdown & Threshold Voltages vs. Junction Temperature 1.3 VGS = 10V 150 1.2 2.6 BVDSS / VGS(th) - Normalized 3.0 RDS(on) - Normalized VGS = 10V 3.0 8V o TJ = 125 C 2.2 1.8 1.4 o TJ = 25 C 1.0 BVDSS 1.1 1.0 0.9 0.8 VGS(th) 0.7 0.6 0.6 0.5 0 20 40 60 80 100 120 140 160 I D - Amperes © 2019 IXYS CORPORATION, All Rights Reserved 180 200 220 240 -60 -40 -20 0 20 40 60 80 TJ - Degrees Centigrade 100 120 140 160 IXFN90N85X Fig. 7. Maximum Drain Current vs. Case Temperature Fig. 8. Input Admittance 100 140 90 120 80 100 o TJ = 125 C I D - Amperes I D - Amperes 70 60 50 40 30 o 25 C o - 40 C 80 60 40 20 20 10 0 0 -50 -25 0 25 50 75 100 125 150 3.5 4.0 4.5 5.0 5.5 TC - Degrees Centigrade 6.0 6.5 7.0 7.5 8.0 8.5 VGS - Volts Fig. 9. Transconductance Fig. 10. Forward Voltage Drop of Intrinsic Diode 120 300 o TJ = - 40 C 100 250 o 200 I S - Amperes g f s - Siemens 25 C 80 o 125 C 60 40 150 o TJ = 125 C 100 o TJ = 25 C 20 50 0 0 0 20 40 60 80 100 120 140 0.2 0.3 0.4 0.5 0.6 I D - Amperes 0.7 0.8 0.9 Fig. 11. Gate Charge 1.1 1.2 1.3 Fig. 12. Capacitance 10 100,000 VDS = 425V Ciss I D = 45A 8 I G = 10mA Capacitance - PicoFarads VGS - Volts 1.0 VSD - Volts 6 4 2 10,000 1,000 Coss 100 10 f = 1 MHz Crss 0 1 0 50 100 150 200 250 300 350 QG - NanoCoulombs IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 100 VDS - Volts 1000 IXFN90N85X Fig. 13. Output Capacitance Stored Energy Fig. 14. Forward-Bias Safe Operating Area 140 1000 RDS(on) Limit 100 100 I D - Amperes EOSS - MicroJoules 120 80 60 25μs 100μs 10 40 1ms 1 o TJ = 150 C o Fig. 15. Maximum Transient Thermal TC =Impedance 25 C 20 10ms 100ms Single Pulse 1 0 0 100 200 300 400 500 600 700 800 0.1 900 10 VDS - Volts 100 1,000 VDS - Volts Fig. 15. Maximum Transient Thermal Impedance aaaaa 0.2 Z (th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2019 IXYS CORPORATION, All Rights Reserved IXYS REF: F_90N85X (S9-D901) 5-04-16 IXFN90N85X SOT-227 Outline IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXFN90N85X Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. 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