IXFN94N50P2

Advance Technical Information IXFN94N50P2 PolarP2TM HiPerFETTM Power MOSFET VDSS ID25 = = 500V 68A  55m 250ns RDS(on)   trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC E153432 S Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M 500 500 V V VGSS VGSM Continuous Transient  30  40 V V ID25 IDM TC = 25C TC = 25C, Pulse Width Limited by TJM 68 240 A A IA EAS TC = 25C TC = 25C 94 3.5 A J PD TC = 25C 780 W dv/dt IS  IDM, VDD  VDSS, TJ  150°C 30 V/ns -55 ... +150 150 -55 ... +150 C C C 2500 3000 V~ V~ 1.5/13 1.3/11.5 Nm/lb.in Nm/lb.in  30 g  TJ TJM Tstg VISOL 50/60 Hz, RMS, t = 1minute IISOL 1mA, t = 1s Md Mounting Torque for Base Plate Terminal Connection Torque Weight G S D G = Gate S = Source Either Source Terminal S can be used as the Source Terminal or the Kelvin Source (Gate Return) Terminal. Features        Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 500 VGS(th) VDS = VGS, ID = 8mA 3.0 IGSS VGS =  30V, VDS = 0V IDSS VDS = VDSS, VGS= 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 TJ = 125C International Standard Package miniBLOC, with Aluminium Nitride Isolation Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Diode Low QG Low RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance Advantages  V 5.0 V 200 nA 10 A 2 mA 55 m  Easy to Mount Space Savings Applications       © 2013 IXYS CORPORATION, All Rights Reserved D = Drain DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies Uninterrupted Power Supplies AC Motor Drives High Speed Power Switching Applications DS100555(8/13) IXFN94N50P2 Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 40 VDS = 10V, ID = 0.5 • ID25, Note 1 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz 75 S 13.7 nF 1320 pF 30 pF 0.80  15 ns 34 ns 67 ns 11 ns 220 nC 73 nC 72 nC Crss RGi Gate Input Resistance td(on) Resistive Switching Times tr td(off) tf VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 1 (External) Qg(on) Qgs SOT-227B miniBLOC (IXFN) VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd RthJC 0.16C/W RthCS 0.05C/W (M4 screws (4x)  Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS VGS = 0V ISM VSD trr QRM IRM Characteristic Values Min. Typ. Max. 94 A Repetitive, Pulse Width Limited by TJM 375 A IF = IS , VGS = 0V, Note 1 1.5 V IF = 47A, -di/dt = 100A/s 1.5 VR = 100V, VGS = 0V 250 ns  μC 13 A Note 1. Pulse test, t  300s, duty cycle, d 2%. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFN94N50P2 Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Extended Output Characteristics @ TJ = 25ºC 200 100 VGS = 10V 7V 90 VGS = 10V 8V 180 80 160 70 140 I D - Amperes I D - Amperes 7V 60 6V 50 40 30 120 100 6V 80 60 40 20 5V 10 5V 20 0 0 0 1 2 3 4 5 6 0 5 10 15 20 25 30 VDS - Volts VDS - Volts Fig. 3. Output Characteristics @ TJ = 125ºC Fig. 4. RDS(on) Normalized to ID = 47A Value vs. Junction Temperature 3.2 100 VGS = 10V 7V 90 VGS = 10V 2.8 80 6V RDS(on) - Normalized I D - Amperes 70 60 50 40 5V 30 2.4 I D = 94A 2.0 I D = 47A 1.6 1.2 20 0.8 10 4V 0 0.4 0 2 4 6 8 10 12 -50 14 -25 0 VDS - Volts 25 50 75 100 125 150 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 47A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 80 3.2 VGS = 10V 70 2.8 TJ = 125ºC I D - Amperes R DS(on) - Normalized 60 2.4 2.0 50 40 30 1.6 TJ = 25ºC 20 1.2 10 0 0.8 0 20 40 60 80 100 120 140 I D - Amperes © 2013 IXYS CORPORATION, All Rights Reserved 160 180 200 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXFN94N50P2 Fig. 8. Transconductance Fig. 7. Input Admittance 140 120 TJ = 125ºC 25ºC - 40ºC 100 g f s - Siemens 80 I D - Amperes TJ = - 40ºC 120 100 60 40 25ºC 80 125ºC 60 40 20 20 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 0 7.0 10 20 30 VGS - Volts 50 60 70 80 90 100 110 120 I D - Amperes Fig. 10. Gate Charge Fig. 9. Forward Voltage Drop of Intrinsic Diode 10 300 VDS = 250V 9 I D = 47A 250 8 I G = 10mA 7 VGS - Volts 200 I S - Amperes 40 150 100 6 5 4 3 TJ = 125ºC 2 TJ = 25ºC 50 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 0 50 VSD - Volts 150 200 250 Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 1000 100,000 RDS(on) Limit f = 1 MHz 25µs 100 10,000 Ciss 100µs I D - Amperes Capacitance - PicoFarads 100 QG - NanoCoulombs 1,000 Coss 10 1ms 1 100 10ms TJ = 150ºC 0.1 Crss 100ms TC = 25ºC Single Pulse DC 0.01 10 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 10 100 VDS - Volts 1,000 IXFN94N50P2 Fig. 13. Maximum Transient Thermal Impedance Z(th)JC - ºC / W 1 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2013 IXYS CORPORATION, All Rights Reserved IXYS REF: IXF_94N50P2(93) 8-19-13-A Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.