IXFA10N60P
IXFP10N60P
Polar3 TM HiPerFETTM
Power MOSFET
VDSS
ID25
RDS(on)
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
= 600V
= 10A
740m
TO-263 (IXFA)
G
S
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ = 25C to 150C
600
V
VDGR
TJ = 25C to 150C, RGS = 1M
600
V
VGSS
Continuous
30
V
VGSM
Transient
40
V
ID25
TC = 25C
10
A
IDM
TC = 25C, Pulse Width Limited by TJM
25
A
IA
TC = 25C
10
A
EAS
TC = 25C
500
mJ
dv/dt
IS IDM, VDD VDSS, TJ 150C
10
V/ns
PD
TC = 25C
200
W
-55 ... +150
C
TJM
150
C
Tstg
-55 ... +150
C
300
260
°C
°C
1.13 / 10
Nm/lb.in
2.5
3.0
g
g
TJ
TL
TSOLD
Maximum Lead Temperature for Soldering
Plastic Body for 10s
Md
Mounting Torque (TO-220)
Weight
TO-263
TO-220
D (Tab)
TO-220 (IXFP)
G
D
S
G = Gate
S = Source
D (Tab)
D
= Drain
Tab = Drain
Features
International Standard Packages
Fast Intrinsic Rectifier
Avalanche Rated
Low RDS(ON) and QG
Low Package Inductance
Advantages
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
BVDSS
VGS = 0V, ID = 250μA
600
VGS(th)
VDS = VGS, ID = 1mA
3.0
IGSS
VGS = 30V, VDS = 0V
IDSS
VDS = VDSS, VGS = 0V
RDS(on)
TJ = 125C
VGS = 10V, ID = 0.5 • ID25, Note 1
© 2018 IXYS CORPORATION, All Rights Reserved
High Power Density
Easy to Mount
Space Savings
V
Applications
V
100 nA
5.5
25 A
500 μA
Switch-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
Laser Drivers
AC and DC Motor Drives
Robotics and Servo Controls
740 m
DS99424G(6/18)
IXFA10N60P
IXFP10N60P
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max
gfs
6
VDS = 10V, ID = 0.5 • ID25, Note 1
11
Ciss
Coss
VGS = 0V, VDS = 25V, f = 1MHz
Crss
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 10 (External)
Qg(on)
Qgs
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
S
1720
pF
160
pF
14
pF
23
ns
27
ns
65
ns
21
ns
32
nC
12
nC
10
nC
1. Gate
2. Drain
3. Source
4. Drain
0.62 C/W
RthJC
RthCS
TO-263 Outline
TO-220
C/W
0.50
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max
IS
VGS = 0V
10
A
ISM
Repetitive, Pulse Width Limited by TJM
30
A
VSD
IF = IS, VGS = 0V, Note 1
1.5
V
trr
QRM
IRM
IF = 5A, -di/dt = 200A/μs
120
320
3
VR = 100V
200
ns
nC
A
TO-220 Outline
E
A
A1
oP
H1
Q
D2
D
D1
E1
A2
EJECTOR
L1
L
e
3X b
c
e1
3X b2
1 - Gate
2,4 - Drain
3 - Source
Note 1. Pulse test, t 300s, duty cycle, d 2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,860,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123B1
6,306,728B1
6,404,065B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
7,005,734B2
6,759,692
7,063,975B2
6,771,478B2 7,071,537
7,157,338B2
IXFA10N60P
IXFP10N60P
o
o
Fig. 2. Extended Output Characteristics @ TJ = 25 C
Fig. 1. Output Characteristics @ TJ = 25 C
24
10
VGS = 10V
VGS = 10V
7V
9
20
8
7V
6V
I D - Amperes
I D - Amperes
7
6
5
4
16
6V
12
8
3
2
4
5V
5V
1
0
0
0
1
2
3
4
5
6
7
0
5
10
15
25
30
Fig. 4. RDS(on) Normalized to ID = 5A Value vs.
Junction Temperature
o
Fig. 3. Output Characteristics @ TJ = 125 C
2.6
10
2.4
VGS = 10V
9
VGS = 10V
2.2
8
RDS(on) - Normalized
6V
7
I D - Amperes
20
VDS - Volts
VDS - Volts
6
5
4
5V
3
2.0
I D = 10A
1.8
I D = 5A
1.6
1.4
1.2
1.0
2
0.8
1
0.6
0.4
0
0
1
2
3
4
5
6
7
8
9
10
11
12
-50
13
-25
0
VDS - Volts
Fig. 5. RDS(on) Normalized to ID = 5A Value vs.
Drain Current
3.0
25
50
75
100
125
150
TJ - Degrees Centigrade
Fig. 6. Maximum Drain Current vs. Case Temperature
12
VGS = 10V
TJ = 125 C
2.2
I D - Amperes
RDS(on) - Normalized
10
o
2.6
1.8
1.4
8
6
4
o
TJ = 25 C
1.0
2
0.6
0
0
5
10
15
I D - Amperes
© 2018 IXYS CORPORATION, All Rights Reserved
20
25
-50
-25
0
25
50
75
TC - Degrees Centigrade
100
125
150
IXFA10N60P
IXFP10N60P
Fig. 8. Transconductance
Fig. 7. Input Admittance
16
22
o
TJ = - 40 C
20
14
18
12
16
10
g f s - Siemens
I D - Amperes
o
TJ = 125 C
o
25 C
o
- 40 C
8
6
o
25 C
14
o
125 C
12
10
8
6
4
4
2
2
0
0
3.2
3.6
4.0
4.4
4.8
5.2
5.6
6.0
0
6.4
2
4
6
VGS - Volts
Fig. 9. Forward Voltage Drop of Intrinsic Diode
10
12
14
16
Fig. 10. Gate Charge
10
30
9
25
VDS = 300V
I D = 5A
8
I G = 10mA
7
20
VGS - Volts
I S - Amperes
8
I D - Amperes
15
10
o
TJ = 125 C
6
5
4
3
o
TJ = 25 C
2
5
1
0
0
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
1.1
5
VSD - Volts
10
15
20
25
30
35
QG - NanoCoulombs
Fig. 12. Maximum Transient Thermal Impedance
Fig. 11. Capacitance
1
10,000
1,000
Ciss
100
Z(th)JC - K / W
Capacitance - PicoFarads
f = 1 MHz
Coss
10
0.1
Crss
1
0
5
10
15
20
25
30
35
40
VDS - Volts
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: F_10N60P (4J) 4-18-10-D
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