IXFP12N65X2M

IXFP12N65X2M X2-Class HiperFETTM Power MOSFET VDSS ID25 RDS(on) D (Electrically Isolated Tab) G N-Channel Enhancement Mode OVERMOLDED TO-220 S Symbol Test Conditions VDSS TJ = 25C to 150C Maximum Ratings 650 V VDGR TJ = 25C to 150C, RGS = 1M 650 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C, Limited by TJM 12 A IDM TC = 25C, Pulse Width Limited by TJM 24 A IA TC = 25C 6 A EAS TC = 25C 300 mJ dv/dt IS  IDM, VDD  VDSS, TJ  150°C 50 V/ns PD TC = 25C 40 W -55 ... +150 C  TJM 150 C  Tstg -55 ... +150 C 300 260 °C °C 2500 V~ 1.13 / 10 Nm/lb.in 2.5 g TJ TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s VISOL 50/60 Hz, 1 Minute Md Mounting Torque Weight G BVDSS VGS = 0V, ID = 250µA 650 VGS(th) VDS = VGS, ID = 250µA 3.0      IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V  RDS(on) VGS = 10V, ID = 6A, Note 1 V 100 nA     © 2020 IXYS CORPORATION, All Rights Reserved International Standard Package Plastic Overmolded Tab High Voltage Package Low RDS(ON) and QG Avalanche Rated 2500V~ Electrical Isolation Low Package Inductance High Power Density Easy to Mount Space Savings Applications  TJ = 125C D = Drain Advantages V 5.0 Isolated Tab Features  Characteristic Values Min. Typ. Max. DS G = Gate S = Source  Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) = 650V = 12A  310m 10 A 500 A Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters PFC Circuits AC and DC Motor Drives Robotics and Servo Controls 310 m DS100750C(1/20) IXFP12N65X2M Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs VDS = 10V, ID = 6A, Note 1 RGi Gate Input Resistance Characteristic Values Min. Typ. Max 4.8 Ciss Coss td(on) Resistive Switching Times tr td(off) tf Qgs  pF pF 1 pF 42 132 pF pF 27 ns 26 ns 45 ns 12 ns 18.5 nC 6.7 nC 5.0 nC VGS = 10V, VDS = 0.5 • VDSS, ID = 6A RG = 20 (External) Qg(on) 4.0 712 Crss Effective Output Capacitance VGS = 0V Energy related VDS = 0.8 • VDSS Time related S 1134 VGS = 0V, VDS = 25V, f = 1MHz Co(er) Co(tr) 8.0 VGS = 10V, VDS = 0.5 • VDSS, ID = 6A Qgd OVERMOLDED TO-220 (IXFP...M) oP 1 2 3 Terminals: 1 - Gate 2 - Drain 3 - Source 3.10 C/W RthJC RthCS C/W 0.50 Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max IS VGS = 0V 12 A ISM Repetitive, Pulse Width Limited by TJM 48 A VSD IF = IS, VGS = 0V, Note 1 1.4 V trr QRM IRM IF = 6A, -di/dt = 100A/µs 155 1 13 ns µC A 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 VR = 100V Note 1. Pulse test, t  300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXFP12N65X2M Fig. 2. Extended Output Characteristics @ TJ = 25oC Fig. 1. Output Characteristics @ TJ = 25oC 12 24 VGS = 10V 8V VGS = 10V 9V 10 20 7V 6 6V 4 8V 16 I D - Amperes I D - Amperes 8 7V 12 8 6V 2 4 5V 5V 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 0 5 10 VDS - Volts 20 25 Fig. 4. RDS(on) Normalized to ID = 6A Value vs. Junction Temperature Fig. 3. Output Characteristics @ TJ = 125oC 12 4.5 VGS = 10V 8V VGS = 10V 4.0 10 7V R DS(on) - Normalized 3.5 8 I D - Amperes 15 VDS - Volts 6V 6 4 5V 3.0 I D = 12A 2.5 2.0 1.5 I D = 6A 1.0 2 0.5 4V 0 0.0 0 2 4.0 4 6 8 10 12 -50 -25 0 25 50 75 100 125 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 6A Value vs. Drain Current Fig. 6. Normalized Breakdown & Threshold Voltages vs. Junction Temperature 1.3 150 V GS = 10V 1.2 BVDSS / V GS(th) - Normalized 3.5 RDS(on) - Normalized o TJ = 125 C 3.0 2.5 2.0 1.5 o TJ = 25 C 1.0 BV DSS 1.1 1.0 0.9 0.8 VGS(th) 0.7 0.5 0.6 0 2 4 6 8 10 12 14 I D - Amperes © 2020 IXYS CORPORATION, All Rights Reserved 16 18 20 22 -60 -40 -20 0 20 40 60 80 TJ - Degrees Centigrade 100 120 140 160 IXFP12N65X2M Fig. 7. Input Admittance Fig. 8. Transconductance 12 10 o 9 TJ = - 40 C 10 o 7 TJ = 125 C 6 - 40 C o 25 C g f s - Siemens I D - Amperes 8 o 5 4 3 2 8 o 25 C 6 o 125 C 4 2 1 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 0 1 2 3 4 VGS - Volts 6 7 8 9 10 14 16 18 20 Fig. 10. Gate Charge Fig. 9. Forward Voltage Drop of Intrinsic Diode 10 40 V DS = 325V 35 I D = 6A 8 I G = 10mA 30 25 VGS - Volts I S - Amperes 5 I D - Amperes 20 o TJ = 125 C 15 6 4 o TJ = 25 C 10 2 5 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 1.1 2 4 6 VSD - Volts 8 10 12 QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Output Capacitance Stored Energy 10000 9 1000 7 C iss EOSS - MicroJoules Capacitance - PicoFarads 8 100 C oss 10 6 5 4 3 2 1 f = 1 MHz 1 C rss 0 0.1 1 10 100 1000 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0 100 200 300 VDS - Volts 400 500 600 IXFP12N65X2M Fig. 14. Maximum Transient Thermal Impedance Fig. 13. Forward-Bias Safe Operating Area 10 100 RDS(on) Limit 1 100µs DC 1 1s 100ms 0.1 1ms o TJ = 150 C o TC = 25 C Single Pulse 0.1 0.01 10ms 0.01 1 Z (th)JC - K / W I D - A m p ere s 10 10 100 VDS - Volts © 2020 IXYS CORPORATION, All Rights Reserved 1,000 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width - Seconds IXYS REF: F_12N65X2(X3-S602) 9-09-16 IXFP12N65X2M Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.