IXFP130N10T

Preliminary Technical Information TrenchTM HiperFETTM Power MOSFET IXFA130N10T IXFP130N10T VDSS ID25 = = 100V 130A  9.1m RDS(on)  N-Channel Enhancement Mode Avalanche Rated Fast Intrisic Diode TO-263 (IXFA) G S D (Tab) Maximum Ratings TO-220 (IXFP) Symbol Test Conditions VDSS TJ = 25C to 175C 100 V VDGR TJ = 25C to 175C, RGS = 1M 100 V VGSS VGSM Continuous Transient  20  30 V V ID25 ILRMS IDM TC = 25C Lead Current Limit, RMS TC = 25C, Pulse Width Limited by TJM 130 120 350 A A A IA EAS TC = 25C TC = 25C 65 750 A mJ PD TC = 25C 360 W  -55 ... +175 175 -55 ... +175 C C C  300 260 °C °C 10..65 / 2.2..14.6 1.13 / 10 N/lb Nm/lb.in 2.5 3.0 g g TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s FC Md Mounting Force (TO-263) Mounting Torque (TO-220) Weight TO-263 TO-220 G D S G = Gate S = Source D (Tab) D = Drain Tab = Drain Features    Ultra-Low On Resistance Avalanche Rated Low Package Inductance - Easy to Drive and to Protect 175C Operating Temperature Fast Intrinsic Diode Advantages    Easy to Mount Space Savings High Power Density Applications  Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250A 100 VGS(th) VDS = VGS, ID = 1mA 2.5 IGSS VGS =  20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) TJ = 150C VGS = 10V, ID = 25A, Notes 1, 2 V 4.5 V  200 nA 10 A 500A 9.1 m       © 2018 IXYS CORPORATION, All rights reserved Automotive - Motor Drives - 42V Power Bus - ABS Systems DC/DC Converters and Off-line UPS Primary Switch for 24V and 48V Systems Distributed Power Architechtures and VRMs Electronic Valve Train Systems High Current Switching Applications High Voltage Synchronous Recifier DS100020A(11/18) IXFA130N10T IXFP130N10T Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS= 10V, ID = 60A, Note 1 55 93 S 5080 pF 630 pF 95 pF 30 ns VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times 47 ns 44 ns 28 ns 104 nC 30 nC 29 nC VGS = 10V, VDS = 0.5 • VDSS, ID = 25A RG = 5 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 25A Qgd C2 A E1 L1 D1 1 2 L2 3 b b2 A1 4 H L3 e c 0.43 [11.0] e 0 0.34 [8.7] 0.66 [16.6] A2 1 - Gate 2,4 - Drain 3 - Source 0.20 [5.0] 0.10 [2.5] 0.12 [3.0] 0.06 [1.6] 0.42 C/W RthJC RthCH E D Ciss Coss TO-263 Outline TO-220 C/W 0.50 Source-Drain Diode Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 130 A ISM Repetitive, Pulse Width Limited by TJM 350 A VSD IF = 25A, VGS = 0V, Note 1 1.0 V trr IRM Qrr IF = 65A, -di/dt = 100A/s 67 4.7 160 VR = 0.5 • VDSS, VGS = 0V TO-220 Outline E ns A nC A oP A1 H1 Q D2 D D1 E1 A2 EJECTOR PIN L1 L Notes: 1. Pulse test, t  300 s; duty cycle, d  2%. e 3X b c e1 2. On through-hole packages, RDS(on) Kelvin test contact location must be 5 mm or less from the package body. 3X b2 1 - Gate 2,4 - Drain 3 - Source PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFA130N10T IXFP130N10T Fig. 1. Output Characteristics @ TJ = 25oC Fig. 2. Extended Output Characteristics @ TJ = 25oC 280 VGS = 10V 8V 120 VGS = 10V 9V 240 100 8V I D - Amperes I D - Amperes 200 7V 80 60 40 160 120 7V 80 6V 20 40 0 6V 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 VDS - Volts 5 6 7 8 9 10 VDS - Volts Fig. 4. RDS(on) Normalized to ID = 65A Value vs. Junction Temperature Fig. 3. Output Characteristics @ TJ = 150oC 3.0 VGS = 10V 9V 8V 120 VGS = 10V 2.6 RDS(on) - Normalized 100 I D - Amperes 7V 80 60 6V 40 20 2.2 I D = 130A 1.8 I D = 65A 1.4 1.0 0.6 5V 0 0.2 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 -50 -25 0 Fig. 5. RDS(on) Normalized to ID = 65A Value vs. Drain Current 50 75 100 125 150 175 Fig. 6. Drain Current vs. Case Temperature 3.0 140 VGS = 10V 15V 2.6 o TJ = 175 C 120 External Lead Current Limit 100 2.2 I D - Amperes RDS(on) - Normalized 25 TJ - Degrees Centigrade VDS - Volts 1.8 1.4 80 60 o TJ = 25 C 40 1.0 20 0.6 0 0 40 80 120 160 I D - Amperes © 2018 IXYS CORPORATION, All rights reserved 200 240 280 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 175 IXFA130N10T IXFP130N10T Fig. 8. Transconductance Fig. 7. Input Admittance 270 120 240 o 25 C o 150 C 210 100 180 g f s - Siemens I D - Amperes o TJ = - 40 C o TJ = - 40 C 150 120 90 o 80 25 C 60 o 150 C 40 60 20 30 0 0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 0 8.0 50 VGS - Volts 150 200 Fig. 10. Gate Charge Fig. 9. Forward Voltage Drop of Intrinsic Diode 10 280 VDS = 50V 9 240 I D = 25A 8 200 I G = 10mA 7 V GS - Volts I S - Amperes 100 I D - Amperes 160 120 o TJ = 150 C 80 6 5 4 3 o 2 TJ = 25 C 40 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 0 10 20 VSD - Volts 40 50 60 70 80 90 100 110 QG - NanoCoulombs Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 1 10,000 Ciss 1,000 Z(th)JC - K / W Capacitance - PicoFarads 30 Coss 0.1 100 Crss f = 1 MHz 10 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS reserves the right to change limits, test conditions, and dimensions. 0.01 0.0001 0.001 0.01 0.1 Pulse Width - Seconds 1 10 IXFA130N10T IXFP130N10T Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 62 65 60 45 I D = 50A VDS = 50V 50 t r - Nanoseconds 50 40 RG = 5 VGS = 10V 54 VDS = 50V 55 t r - Nanoseconds 58 RG = 5 VGS = 10V o TJ = 25 C 46 42 38 34 35 o 30 TJ = 125 C 30 I D = 25A 26 25 22 25 35 45 55 65 75 85 95 105 115 25 125 30 35 TJ - Degrees Centigrade TJ = 125 C, VGS = 10V 47 100 VDS = 50V 44 td(on) o 41 I D = 50A 80 38 I D = 25A 70 35 60 32 50 29 40 26 30 23 20 40 38 10 12 14 16 18 td(off) 64 RG = 5, VGS = 10V VDS = 50V 36 60 I D = 25A 34 56 32 52 I D = 50A 30 48 28 44 26 20 8 68 tf t f - Nanoseconds 110 t r - Nanoseconds tr 50 6 50 25 20 t d(off) - Nanoseconds 53 120 t d(on) - Nanoseconds 130 4 45 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 90 40 I D - Amperes 35 45 55 65 75 85 95 105 115 40 125 TJ - Degrees Centigrade RG - Ohms Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance Fig. 17. Resistive Turn-off Switching Times vs. Drain Current 40 70 100 38 66 90 170 tr 25A < I D < 50A td(on) 150 o TJ = 125 C, VGS = 10V 62 td(off) 58 RG = 5, VGS = 10V 32 54 VDS = 50V 30 50 28 46 o TJ = 25 C 26 24 25 30 35 40 I D - Amperes © 2018 IXYS CORPORATION, All rights reserved 45 50 130 70 110 I D = 25A 60 90 I D = 50A 50 42 40 38 30 70 t d(off) - Nanoseconds tf 34 VDS = 50V 80 t f - Nanoseconds o TJ = 125 C t d(off) - Nanoseconds t f - Nanoseconds 36 50 30 4 6 8 10 12 14 16 18 20 RG - Ohms IXYS REF: T_130N10T (4V)07-29-08-A Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.