IXFP130N15X3

Advance Technical Information IXFA130N15X3 IXFP130N15X3 IXFH130N15X3 X3-Class HiPerFETTM Power MOSFET VDSS ID25 = 150V = 130A  9.0m  RDS(on) N-Channel Enhancement Mode Avalanche Rated TO-263 AA (IXFA) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 150 V VDGR TJ = 25C to 150C, RGS = 1M 150 V VGSS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C 130 A IDM TC = 25C, Pulse Width Limited by TJM 230 A IA TC = 25C 65 A EAS TC = 25C 1.2 J dv/dt IS  IDM, VDD  VDSS, TJ  150°C 20 V/ns PD TC = 25C 390 W -55 ... +150 C TJ TJM 150 C Tstg -55 ... +150 C 300 260 °C °C 10..65 / 2.2..14.6 1.13 / 10 N/lb Nm/lb.in 2.5 3.0 6.0 g g g TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s FC Md Mounting Force (TO-263) Mounting Torque (TO-220 & TO-247) Weight TO-263 TO-220 TO-247 TO-220AB (IXFP) G DS D (Tab) TO-247 (IXFH) G D S G = Gate S = Source D (Tab) D = Drain Tab = Drain Features     International Standard Packages Low RDS(ON) and QG Avalanche Rated Low Package Inductance Advantages Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 150 VGS(th) VDS = VGS, ID = 1.5mA 2.5 IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1   V 4.5 V 100 nA 5 300 TJ = 125C  A A Applications   7.6 9.0 m    © 2017 IXYS CORPORATION, All Rights Reserved High Power Density Easy to Mount Space Savings Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters PFC Circuits AC and DC Motor Drives Robotics and Servo Controls DS100808B(10/17) IXFA130N15X3 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs VDS = 10V, ID = 60A, Note 1 RGi Gate Input Resistance Characteristic Values Min. Typ. Max 50 Ciss Coss IXFP130N15X3 IXFH130N15X3 82 S 1.8  5230 pF 920 pF 14 pF 585 1350 pF pF 21 ns 25 ns 62 ns 12 ns 80 nC 27 nC 25 nC VGS = 0V, VDS = 25V, f = 1MHz Crss Effective Output Capacitance Co(er) Co(tr) Energy related td(on) Resistive Switching Times tr td(off) tf Time related VGS = 0V VDS = 0.8 • VDSS VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 5 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.32 C/W RthJC RthCS TO-220 TO-247 0.50 0.21 C/W C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max IS VGS = 0V 130 A ISM Repetitive, pulse Width Limited by TJM 520 A VSD IF = IS, VGS = 0V, Note 1 1.4 V trr QRM IRM IF = 65A, -di/dt = 100A/μs 80 230 5.7 VR = 100V ns nC A Note 1. Pulse test, t  300s, duty cycle, d 2%. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXFA130N15X3 IXFP130N15X3 IXFH130N15X3 o o Fig. 2. Extended Output Characteristics @ TJ = 25 C Fig. 1. Output Characteristics @ TJ = 25 C 400 VGS = 10V VGS = 10V 9V 120 350 8V 9V 300 7V 80 I D - Amperes I D - Amperes 100 60 6V 250 8V 200 7V 150 40 100 6V 20 50 5V 5V 0 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 0 5 10 15 VDS - Volts 3.0 VGS = 10V 9V 8V RDS(on) - Normalized I D - Amperes 7V 80 60 6V 40 5V 20 4.0 1.2 1.6 I D = 130A 1.8 I D = 65A 1.4 1.0 2 0.2 2.4 -50 2.8 -25 0 25 50 75 100 125 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 65A Value vs. Drain Current Fig. 6. Normalized Breakdown & Threshold Voltages vs. Junction Temperature 1.2 150 VGS = 10V 3.5 BVDSS 1.1 3.0 BVDSS / VGS(th) - Normalized RDS(on) - Normalized 0.8 2.2 0.6 4V 0 0.4 30 VGS = 10V 2.6 100 0 25 Fig. 4. RDS(on) Normalized to ID = 65A Value vs. Junction Temperature o Fig. 3. Output Characteristics @ TJ = 125 C 120 20 VDS - Volts o TJ = 125 C 2.5 2.0 1.5 o TJ = 25 C 1.0 0.9 0.8 VGS(th) 0.7 1.0 0.5 0.6 0 50 100 150 200 250 I D - Amperes © 2017 IXYS CORPORATION, All Rights Reserved 300 350 400 -60 -40 -20 0 20 40 60 80 TJ - Degrees Centigrade 100 120 140 160 IXFA130N15X3 Fig. 7. Maximum Drain Current vs. Case Temperature IXFP130N15X3 IXFH130N15X3 Fig. 8. Input Admittance 180 140 160 120 VDS = 10V 140 100 I D - Amperes I D - Amperes 120 80 60 100 80 o TJ = 125 C 60 o 25 C 40 o - 40 C 40 20 20 0 0 -50 -25 0 25 50 75 100 125 150 3.5 4.0 4.5 5.0 5.5 TC - Degrees Centigrade 6.0 6.5 7.0 7.5 VGS - Volts Fig. 9. Transconductance Fig. 10. Forward Voltage Drop of Intrinsic Diode 160 400 o VDS = 10V 140 TJ = - 40 C 350 120 300 100 I S - Amperes g f s - Siemens o 25 C o 80 125 C 60 250 200 150 o 40 100 20 50 TJ = 125 C o TJ = 25 C 0 0 0 20 40 60 80 100 120 140 160 180 0.3 200 0.5 0.7 0.9 I D - Amperes Fig. 11. Gate Charge 1.3 1.5 1.7 Fig. 12. Capacitance 10 100,000 f = 1 MHz VDS = 75V I D = 65A 8 I G = 10mA Capacitance - PicoFarads VGS - Volts 1.1 VSD - Volts 6 4 2 10,000 Ciss 1,000 Coss 100 Crss 0 10 0 10 20 30 40 50 60 70 80 QG - NanoCoulombs IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 100 VDS - Volts 1000 IXFA130N15X3 IXFP130N15X3 IXFH130N15X3 Fig. 14. Forward-Bias Safe Operating Area Fig. 13. Output Capacitance Stored Energy 6 1000 RDS(on) Limit 5 I D - Amperes E OSS - MicroJoules 100 4 3 2 100μs 10 1 1ms o TJ = 150 C o 1 TC = 25 C Single Pulse 0 10ms DC 0.1 0 20 40 60 80 100 120 140 1 10 100 1000 VDS - Volts VDS - Volts Fig. 15. Maximum Transient Thermal Impedance 1 Z(th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2017 IXYS CORPORATION, All Rights Reserved IXYS REF: F_130N15X3 (25-S151) 6-29-17 IXFA130N15X3 TO-263 Outline IXFP130N15X3 IXFH130N15X3 TO-247 Outline TO-220 Outline D A A2 A B E Q S R D2 D1 D P1 1 2 4 3 L1 C 1 = Gate 2 = Drain 3 = Source 4 = Drain E1 L A1 C b b2 b4 e Pins: 1 - Gate 3 - Source IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 2 - Drain 1 - Gate 2,4 - Drain 3 - Source