IXFP14N85XM

Preliminary Technical Information IXFP14N85XM X-Class HiPerFETTM Power MOSFET VDSS ID25 RDS(on) = 850V = 14A  550m  (Electrically Isolated Tab) OVERMOLDED TO-220 N-Channel Enhancement Mode Symbol Test Conditions VDSS TJ = 25C to 150C Maximum Ratings 850 V VDGR TJ = 25C to 150C, RGS = 1M 850 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C, Limited by TJM 14 A IDM TC = 25C, Pulse Width Limited by TJM 35 A G G = Gate S = Source IA TC = 25C 7 A EAS TC = 25C 500 mJ dv/dt IS  IDM, VDD  VDSS, TJ  150°C 50 V/ns PD TC = 25C 38 W -55 ... +150 C  TJM 150 C  Tstg -55 ... +150 C  300 260 °C °C 2500 V~ 1.13 / 10 Nm/lb.in 2.5 g TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s VISOL 50/60 Hz, 1 Minute Md Mounting Torque     Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) VGS = 0V, ID = 1mA 850 VGS(th) VDS = VGS, ID = 1mA 3.5 IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 7A, Note 1  V 5.5 V    100 nA TJ = 125C © 2018 IXYS CORPORATION, All Rights Reserved International Standard Package Plastic Overmolded Tab Low RDS(ON) and QG Avalanche Rated 2500V~ Electrical Isolation Low Package Inductance High Power Density Easy to Mount Space Savings Applications Characteristic Values Min. Typ. Max. BVDSS D = Drain Advantages  Weight Isolated Tab Features  TJ DS  Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters PFC Circuits AC and DC Motor Drives Robotics and Servo Controls 10 A 1 mA 550 m DS100771A(10/18) IXFP14N85XM Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max gfs VDS = 10V, ID = 7A, Note 1 4.6 RGi Gate Input Resistance Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz 7.7 S 1  1043 pF 1110 pF 17 pF 55 177 pF pF 16 ns 30 ns 36 ns 13 ns 30 nC 7 nC 17 nC Crss OVERMOLDED TO-220 (IXFP...M) oP 1 2 3 Effective Output Capacitance Co(er) Co(tr) Energy related td(on) Resistive Switching Times tr td(off) tf Time related VGS = 0V VDS = 0.8 • VDSS VGS = 10V, VDS = 0.5 • VDSS, ID = 7A RG = 10 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 7A Qgd Terminals: 1 - Gate 2 - Drain 3 - Source 3.30 C/W RthJC RthCS C/W 0.50 Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max IS VGS = 0V 14 A ISM Repetitive, pulse Width Limited by TJM 56 A VSD IF = IS, VGS = 0V, Note 1 1.4 V trr QRM IRM IF = 7A, -di/dt = 100A/μs 116 0.9 15.5 VR = 100V ns μC A Note 1. Pulse test, t  300s, duty cycle, d 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXFP14N85XM o o Fig. 2. Extended Output Characteristics @ TJ = 25 C Fig. 1. Output Characteristics @ TJ = 25 C 14 VGS = 10V VGS = 10V 24 12 9V 20 9V I D - Amperes I D - Amperes 10 8V 8 6 4 16 12 8V 8 7V 7V 4 2 6V 6V 0 0 0 1 2 3 4 5 6 7 0 8 5 10 15 VDS - Volts 25 30 Fig. 4. RDS(on) Normalized to ID = 7A Value vs. Junction Temperature o Fig. 3. Output Characteristics @ TJ = 125 C 14 4.2 VGS = 10V 9V 12 20 VDS - Volts 3.8 VGS = 10V 3.4 I D - Amperes RDS(on) - Normalized 8V 10 8 7V 6 4 I D = 14A 2.6 2.2 1.8 I D = 7A 1.4 1.0 6V 2 0.6 5V 0.2 0 0 4.0 4 8 12 16 20 -50 24 -25 0 25 50 75 100 125 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 7A Value vs. Drain Current Fig. 6. Normalized Breakdown & Threshold Voltages vs. Junction Temperature 1.2 150 VGS = 10V 3.5 1.1 BVDSS / VGS(th) - Normalized o TJ = 125 C RDS(on) - Normalized 3.0 3.0 2.5 2.0 o TJ = 25 C 1.5 BVDSS 1.0 0.9 0.8 VGS(th) 0.7 1.0 0.5 0.6 0 4 8 12 16 I D - Amperes © 2018 IXYS CORPORATION, All Rights Reserved 20 24 28 -60 -40 -20 0 20 40 60 80 TJ - Degrees Centigrade 100 120 140 160 IXFP14N85XM Fig. 7. Input Admittance Fig. 8. Transconductance 14 14 12 12 10 10 o TJ = 125 C g f s - Siemens I D - Amperes o TJ = - 40 C o 25 C 8 o - 40 C 6 o 25 C 8 o 125 C 6 4 4 2 2 0 0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 0 2 4 6 VGS - Volts 8 10 12 14 16 I D - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 45 10 VDS = 425V 40 I D = 7A 8 35 I G = 10mA V GS - Volts I S - Amperes 30 25 20 15 6 4 o TJ = 125 C 10 2 o TJ = 25 C 5 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0 1.3 5 10 VSD - Volts 20 25 30 Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 100 10000 25μs RDS(on) Limit 1000 10 Ciss I D - Amperes Capacitance - PicoFarads 15 QG - NanoCoulombs 100 Coss 10 100μs 1 1ms 0.1 o TJ = 150 C 1 o f = 1 MHz TC = 25 C Single Pulse Crss 0.1 DC 10ms 100ms 1s 0.01 1 10 100 1000 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 100 VDS - Volts 1,000 IXFP14N85XM Fig. 13. Output Capacitance Stored Energy Fig. 14. Maximum Transient Thermal Impedance 20 10 18 1 14 Z (th)JC - K / W E OSS - MicroJoules 16 12 10 8 0.1 6 0.01 4 2 0 0 100 200 300 400 500 600 VDS - Volts © 2018 IXYS CORPORATION, All Rights Reserved 700 800 900 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width - Seconds IXYS REF: F_14N85X(S4-D901) 1-10-17-A Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. 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