IXFP18N65X2

IXFA18N65X2 IXFP18N65X2 IXFH18N65X2 X2-Class HiPerFETTM Power MOSFET VDSS ID25 = 650V = 18A  200m  RDS(on) N-Channel Enhancement Mode Avalanche Rated TO-263 (IXFA) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 650 V VDGR TJ = 25C to 150C, RGS = 1M 650 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C 18 A IDM TC = 25C, Pulse Width Limited by TJM 22 A IA TC = 25C 4 A EAS TC = 25C 300 mJ dv/dt IS  IDM, VDD  VDSS, TJ  150°C 50 V/ns PD TC = 25C 290 W -55 ... +150 C TJM 150 C Tstg -55 ... +150 C 300 260 °C °C 10..65 / 2.2..14.6 1.13 / 10 N/lb Nm/lb.in 2.5 3.0 6.0 g g g TJ TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s FC Md Mounting Force (TO-263) Mounting Torque (TO-220 & TO-247) Weight TO-263 TO-220 TO-247 TO-220 (IXFP) G D S D (Tab) TO-247 (IXFH) G D S G = Gate S = Source D (Tab) D = Drain Tab = Drain Features     International Standard Packages Low RDS(ON) and QG Avalanche Rated Low Package Inductance Advantages Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 650 VGS(th) VDS = VGS, ID = 1.5mA 3.0 IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1   V 5.0 V 100 nA 25 A 1.5 mA TJ = 125C  Applications   164 200 m    © 2018 IXYS CORPORATION, All Rights Reserved High Power Density Easy to Mount Space Savings Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters PFC Circuits AC and DC Motor Drives Robotics and Servo Controls DS100869C(6/18) IXFA18N65X2 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max gfs VDS = 10V, ID = 0.5 • ID25, Note 1 8 RGi Gate Input Resistance Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz 13 S 3.5  1520 pF 1100 pF 1.8 pF 72 250 pF pF 20 ns 30 ns 50 ns 26 ns 29 nC 9 nC 11 nC Crss IXFP18N65X2 IXFH18N65X2 Effective Output Capacitance Co(er) Co(tr) td(on) tr td(off) tf Energy related Time related VGS = 0V VDS = 0.8 • VDSS Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 10 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.43 C/W RthJC RthCS TO-220 TO-247 C/W C/W 0.50 0.21 Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max IS VGS = 0V 18 A ISM Repetitive, pulse Width Limited by TJM 72 A VSD IF = IS, VGS = 0V, Note 1 1.4 V trr QRM IRM IF = 9A, -di/dt = 100A/μs 135 840 12.5 VR = 100V ns nC A Note 1. Pulse test, t  300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXFA18N65X2 o o Fig. 1. Output Characteristics @ TJ = 25 C Fig. 2. Extended Output Characteristics @ TJ = 25 C 40 18 VGS = 10V 8V 16 8V 7V 30 12 I D - Amperes I D - Amperes VGS = 10V 9V 35 14 10 6V 8 6 7V 25 20 15 6V 10 4 2 5 5V 5V 0 0 0 0.5 1 1.5 2 2.5 3 3.5 0 5 10 VDS - Volts 20 25 Fig. 4. RDS(on) Normalized to ID = 9A Value vs. Junction Temperature o 18 3.8 VGS = 10V 7V 16 VGS = 10V 3.4 14 3.0 RDS(on) - Normalized 6V 12 I D - Amperes 15 VDS - Volts Fig. 3. Output Characteristics @ TJ = 125 C 10 8 5V 6 2.6 I D = 18A 2.2 I D = 9A 1.8 1.4 1.0 4 2 0.6 4V 0 0.2 0 5.0 1 2 3 4 5 6 7 8 9 -50 -25 0 25 50 75 100 125 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 9A Value vs. Drain Current Fig. 6. Normalized Breakdown & Threshold Voltages vs. Junction Temperature 1.3 VGS = 10V 4.5 150 1.2 BVDSS / VGS(th) - Normalized 4.0 o RDS(on) - Normalized IXFP18N65X2 IXFH18N65X2 TJ = 125 C 3.5 3.0 2.5 2.0 o TJ = 25 C 1.5 BVDSS 1.1 1.0 0.9 0.8 VGS(th) 0.7 0.6 1.0 0.5 0.5 0 5 10 15 20 25 I D - Amperes © 2018 IXYS CORPORATION, All Rights Reserved 30 35 40 -60 -40 -20 0 20 40 60 80 TJ - Degrees Centigrade 100 120 140 160 IXFA18N65X2 Fig. 7. Maximum Drain Current vs. Case Temperature IXFP18N65X2 IXFH18N65X2 Fig. 8. Input Admittance 20 28 18 VDS = 10V 24 16 20 I D - Amperes I D - Amperes 14 12 10 8 6 16 12 o TJ = 125 C o 25 C 8 o - 40 C 4 4 2 0 0 -50 -25 0 25 50 75 100 125 3.0 150 3.5 4.0 4.5 5.0 TC - Degrees Centigrade 5.5 6.0 6.5 7.0 7.5 VGS - Volts Fig. 9. Transconductance Fig. 10. Forward Voltage Drop of Intrinsic Diode 30 70 VDS = 10V 25 60 o 50 20 I S - Amperes g f s - Siemens TJ = - 40 C o 25 C 15 o 125 C 10 40 30 o TJ = 125 C 20 o TJ = 25 C 5 10 0 0 0 5 10 15 20 25 30 0.4 0.5 0.6 0.7 0.9 1.0 1.1 1.2 Fig. 12. Capacitance Fig. 11. Gate Charge 10 10000 VDS = 325V 8 I D = 9A Ciss Capacitance - PicoFarads 9 I G = 10mA 7 VGS - Volts 0.8 VSD - Volts I D - Amperes 6 5 4 3 1000 100 Coss 10 2 Crss f = 1 MHz 1 0 1 0 5 10 15 20 25 30 QG - NanoCoulombs IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 100 VDS - Volts 1000 IXFA18N65X2 Fig. 14. Forward-Bias Safe Operating Area Fig. 13. Output Capacitance Stored Energy 100 16 RDS(on) Limit 14 12 10 10 I D - Amperes EOSS - MicroJoules IXFP18N65X2 IXFH18N65X2 8 6 4 100μs 1 0.1 1ms o TJ = 150 C DC o TC = 25 C Single Pulse 2 0 10ms 0.01 0 100 200 300 400 500 600 1 10 100 1,000 VDS - Volts VDS - Volts Fig. 15. Maximum Transient Thermal Impedance 1 Z(th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width - Second © 2018 IXYS CORPORATION, All Rights Reserved IXYS REF: F_18N65X2(Y4-S602) 12-13-17 IXFA18N65X2 TO-263 Outline 1 - Gate 2,4 - Drain 3 - Source TO-220 Outline 1 - Gate 2,4 - Drain 3 - Source TO-247 Outline 1 - Gate 2,4 - Drain 3 - Source IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXFP18N65X2 IXFH18N65X2 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. 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