IXFP20N50P3

IXFA20N50P3 IXFP20N50P3 IXFQ20N50P3 IXFH20N50P3 Polar3TM HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-263 (IXFA) VDSS ID25 RDS(on) TO-3P (IXFQ) TO-220 (IXFP) G S G D S D (Tab) G D D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 500 V VDGR TJ = 25C to 150C, RGS = 1M 500 V VGSS VGSM Continuous Transient  30  40 V V ID25 TC = 25C 20 A IDM TC = 25C, Pulse Width Limited by TJM 40 A IA TC = 25C 10 A EAS TC = 25C 300 mJ dv/dt IS  IDM, VDD  VDSS, TJ  150°C 35 V/ns PD TC = 25C 380 W -55 ... +150  C TJM 150  C Tstg -55 ... +150  C TJ TL TSOLD Maximum Lead Temperature for Soldering Plastic Body for 10s 300 260 °C °C FC Md Mounting Force (TO-263) 10..65 / 2.2..14.6 Mounting Torque (TO-220, TO-3P & TO-247) 1.13 / 10 N/lb Nm/lb.in Weight TO-263 TO-220 TO-3P TO-247 2.5 3.0 5.5 6.0 g g g g G Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 500 VGS(th) VDS = VGS, ID = 1.5mA 3.0 IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 © 2018 IXYS CORPORATION, All Rights Reserved 5.0 V           100 nA 25 A 1.25 mA 300 m D S D (Tab) D = Drain Tab = Drain Features    Fast Intrinsic Rectifier Avalanche Rated Low RDS(ON) and QG Low Package Inductance Advantages   V D (Tab) G = Gate S = Source  Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) S TO-247 (IXFH)  TJ = 125C = 500V = 20A   300m High Power Density Easy to Mount Space Savings Applications      Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters Laser Drivers AC and DC Motor Drives Robotics and Servo Controls DS100414B(6/18) IXFA20N50P3 IXFA20N50P3 IXFQ20N50P3 IXFH20N50P3 Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 20V, ID = 0.5 • ID25, Note 1 11 Ciss Coss 18 S 1800 pF 230 pF 8.3 pF VGS = 0V, VDS = 25V, f = 1MHz Crss RGi Gate Input Resistance td(on) Resistive Switching Times tr td(off) tf 2.3 10 ns ns 9 ns 36 nC 7 nC 13 nC 0.50 0.25 0.36 C/W C/W C/W RG = 5 (External) VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 TO-220 TO-247 & TO-3P ns 5 Qgd RthJC RthCS  43 VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qg(on) Qgs  Source-Drain Diode Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 20 A ISM Repetitive, Pulse Width Limited by TJM 80 A VSD IF = IS, VGS = 0V, Note 1 1.4 V 250 ns trr IRM QRM Note IF = 10A, -di/dt = 100A/s VR = 100V, VGS = 0V 8.0 A 0.6 μC 1. Pulse test, t  300s, duty cycle, d  2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFA20N50P3 IXFA20N50P3 IXFQ20N50P3 IXFH20N50P3 o o Fig. 2. Extended Output Characteristics @ TJ = 25 C Fig. 1. Output Characteristics @ TJ = 25 C 45 20 VGS = 10V 7V 18 16 35 6V 14 7V 30 I D - Amperes I D - Amperes VGS = 10V 8V 40 12 10 8 5.5V 25 20 6V 15 6 10 4 2 5V 5 5V 0 0 0 1 2 3 4 5 6 7 0 5 10 15 25 30 Fig. 4. RDS(on) Normalized to ID = 10A Value vs. Junction Temperature o Fig. 3. Output Characteristics @ TJ = 125 C 20 3.4 VGS = 10V 7V 18 20 VDS - Volts VDS - Volts VGS = 10V 3.0 6V 14 I D - Amperes RDS(on) - Normalized 16 12 10 5V 8 6 2 I D = 20A 2.2 I D = 10A 1.8 1.4 1.0 4.5V 4 2.6 0.6 4V 0 0.2 0 2 4 6 8 10 12 14 16 -50 -25 0 VDS - Volts Fig. 5. RDS(on) Normalized to ID = 10A Value vs. Drain Current 3.8 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 6. Maximum Drain Current vs. Case Temperature 24 VGS = 10V 3.4 20 o TJ = 125 C 16 2.6 I D - Amperes RDS(on) - Normalized 3.0 2.2 1.8 12 8 o TJ = 25 C 1.4 4 1.0 0.6 0 0 5 10 15 20 25 30 I D - Amperes © 2018 IXYS CORPORATION, All Rights Reserved 35 40 45 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 IXFA20N50P3 IXFA20N50P3 IXFQ20N50P3 IXFH20N50P3 Fig. 8. Transconductance Fig. 7. Input Admittance 30 20 o TJ = - 40 C 18 25 16 o g f s - Siemens I D - Amperes 14 12 10 o TJ = 125 C 8 o 25 C 6 25 C 20 o 125 C 15 10 o - 40 C 4 5 2 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0 6.5 2 4 6 8 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 12 14 16 18 20 22 Fig. 10. Gate Charge 10 60 VDS = 250V 9 50 I D = 10A 8 I G = 10mA 7 40 VGS - Volts I S - Amperes 10 I D - Amperes 30 20 o TJ = 125 C 6 5 4 3 o TJ = 25 C 2 10 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 1.1 5 10 VSD - Volts 15 20 25 30 35 40 QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area 100 10,000 100μs 1,000 Ciss 10 I D - Amperes Capacitance - PicoFarads RDS(on) Limit Coss 100 1 10 o TJ = 150 C 1ms o TC = 25 C Single Pulse Crss f = 1 MHz 1 0.1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 10 100 VDS - Volts 1,000 IXFA20N50P3 IXFA20N50P3 IXFQ20N50P3 IXFH20N50P3 Fig. 13. Maximum Transient Thermal Impedance Z (th)JC - K / W 1 0.1 0.01 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2018 IXYS CORPORATION, All Rights Reserved IXYS REF: F_20N50P3(W5) 11-14-11 IXFA20N50P3 IXFA20N50P3 IXFQ20N50P3 IXFH20N50P3 TO-263 Outline TO-220 Outline 1 - Gate 2,4 - Drain 3 - Source 1 - Gate 2,4 - Drain 3 - Source TO-247 Outline 1 - Gate 2,4 - Drain 3 - Source TO-3P Outline 1 - Gate 2,4 - Drain 3 - Source IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.