IXFP20N50P3M

Preliminary Technical Information IXFP20N50P3M Polar3TM HiperFETTM Power MOSFET VDSS ID25 RDS(on) = 500V = 8A   300m N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier OVERMOLDED Symbol Test Conditions VDSS TJ = 25C to 150C Maximum Ratings 500 V VDGR TJ = 25C to 150C, RGS = 1M 500 V VGSS VGSM Continuous Transient  30  40 V V ID25 TC = 25C 8 A IDM TC = 25C, Pulse Width Limited by TJM 40 A IA TC = 25C 10 A EAS TC = 25C 300 mJ dv/dt IS  IDM, VDD  VDSS, TJ  150°C 35 V/ns PD TC = 25C 58 W -55 ... +150  C TJM 150  C Tstg -55 ... +150  C TJ TL TSOLD Maximum Lead Temperature for Soldering Plastic Body for 10s Md Mounting Torque 300 260 °C °C 1.13 / 10 Nm/lb.in 2.5 g Weight G G = Gate S = Source       BVDSS VGS = 0V, ID = 1mA 500 VGS(th) VDS = VGS, ID = 1.5mA 3.0 IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 10A, Note 1 © 2013 IXYS CORPORATION, All Rights Reserved High Power Density Easy to Mount Space Savings Applications V  TJ = 125C Plastic Overmolded Tab for Electrical Isolation Fast Intrinsic Rectifier Avalanche Rated Low RDS(ON) and QG Low Package Inductance Advantages  Characteristic Values Min. Typ. Max. D = Drain Features  Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) DS 5.0 V           100 nA 25 A 1.25 mA     Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters Laser Drivers AC and DC Motor Drives Robotics and Servo Controls 300 m DS100415A(11/13) IXFP20N50P3M Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 20V, ID = 10A, Note 1 11 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss RGi Gate Input Resistance td(on) Resistive Switching Times tr td(off) tf 18 S 1800 pF 230 pF 8.3 pF 2.3 VGS = 10V, VDS = 0.5 • VDSS, ID = 10A RG = 5 (External) Qg(on) Qgs ISOLATED TO-220 (IXFP...M)  10 ns 5 ns 43 ns 9 ns 36 nC 7 nC 13 nC VGS = 10V, VDS = 0.5 • VDSS, ID = 10A Qgd  2.15 C/W RthJC 1 2 3 Terminals: 1 - Gate 2 - Drain 3 - Source Source-Drain Diode Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 20 A ISM Repetitive, Pulse Width Limited by TJM 80 A VSD IF = IS, VGS = 0V, Note 1 1.4 V 250 ns trr IRM QRM Note IF = 10A, -di/dt = 100A/s VR = 100V, VGS = 0V 8.0 A 0.6 μC 1. Pulse test, t  300s, duty cycle, d  2%. PRELIMANARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFP20N50P3M Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC 45 20 VGS = 10V 7V 18 16 35 6V 14 7V 30 ID - Amperes ID - Amperes VGS = 10V 8V 40 12 10 8 5.5V 25 20 6V 15 6 10 4 2 5V 5 5V 0 0 0 1 2 3 4 5 6 0 7 5 10 15 20 25 30 VDS - Volts VDS - Volts Fig. 4. RDS(on) Normalized to ID = 10A Value vs. Junction Temperature Fig. 3. Output Characteristics @ T J = 125ºC 20 3.4 VGS = 10V 7V 18 VGS = 10V 3.0 6V 14 ID - Amperes R DS(on) - Normalized 16 12 10 5V 8 6 2.6 I D = 20A 2.2 I D = 10A 1.8 1.4 1.0 4.5V 4 0.6 4V 2 0 0.2 0 2 4 6 8 10 12 14 16 -50 0 25 50 75 100 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 10A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 125 150 125 150 9 3.8 VGS = 10V 8 3.4 TJ = 125ºC 3.0 7 6 ID - Amperes R DS(on) - Normalized -25 VDS - Volts 2.6 2.2 1.8 5 4 3 TJ = 25ºC 1.4 2 1.0 1 0.6 0 0 5 10 15 20 25 30 ID - Amperes © 2013 IXYS CORPORATION, All Rights Reserved 35 40 45 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXFP20N50P3M Fig. 7. Input Admittance Fig. 8. Transconductance 30 20 TJ = - 40ºC 18 25 16 25ºC 12 TJ = 125ºC 10 25ºC 8 20 g f s - Siemens ID - Amperes 14 - 40ºC 125ºC 15 10 6 4 5 2 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0 6.5 2 4 6 8 Fig. 9. Forward Voltage Drop of Intrinsic Diode 12 14 16 18 20 22 Fig. 10. Gate Charge 60 10 VDS = 250V 9 I D = 10A 50 8 I G = 10mA 7 40 VGS - Volts IS - Amperes 10 ID - Amperes VGS - Volts 30 6 5 4 TJ = 125ºC 20 3 TJ = 25ºC 2 10 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0 5 VSD - Volts 10 15 20 25 30 35 40 QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area 10,000 100 25µs 1,000 Ciss 100µs 10 ID - Amperes Capacitance - PicoFarads RDS(on) Limit Coss 100 1 1ms 10 TJ = 150ºC Crss TC = 25ºC Single Pulse f = 1 MHz 10ms 1 0.1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 10 100 VDS - Volts 1,000 IXFP20N50P3M Fig. 13. Maximum Transient Thermal Impedance 10 Z (th)JC - ºC / W 1 0.1 0.01 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width - Seconds © 2013 IXYS CORPORATION, All Rights Reserved IXYS REF: F_20N50P3(W5) 11-14-11 Disclaimer Notice - Information furnished is believed to be accurate and reliable. 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