IXFP22N65X2M

IXFP22N65X2M X2-Class HiperFETTM Power MOSFET VDSS ID25 RDS(on) D (Electrically Isolated Tab) = 650V = 22A  145m G OVERMOLDED TO-220 S N-Channel Enhancement Mode Symbol Test Conditions VDSS TJ = 25C to 150C Maximum Ratings 650 V VDGR TJ = 25C to 150C, RGS = 1M 650 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C, Limited by TJM 22 A IDM TC = 25C, Pulse Width Limited by TJM 44 A IA TC = 25C 5 A EAS TC = 25C 1 J dv/dt IS  IDM, VDD  VDSS, TJ  150°C 50 V/ns PD TC = 25C 37 W -55 ... +150 C TJM 150 C Tstg -55 ... +150 C 300 260 °C °C 2500 V~ 1.13 / 10 Nm/lb.in 2.5 g TJ TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s VISOL 50/60 Hz, 1 Minute Md Mounting Torque Weight G G = Gate S = Source        BVDSS VGS = 0V, ID = 250µA 650 VGS(th) VDS = VGS, ID = 1.5mA 3.5 IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 11A, Note 1 V 100 nA TJ = 125C © 2020 IXYS CORPORATION, All Rights Reserved International Standard Package Plastic Overmolded Tab High Voltage Package Low RDS(ON) and QG Avalanche Rated 2500V~ Electrical Isolation Low Package Inductance  High Power Density Easy to Mount Space Savings Applications V 5.0 D = Drain Advantages  Characteristic Values Min. Typ. Max. Isolated Tab Features  Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) DS 10 A 1.5 mA      Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters PFC Circuits AC and DC Motor Drives Robotics and Servo Controls 145 m DS100713C(1/20) IXFP22N65X2M Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs VDS = 10V, ID = 11A, Note 1 RGi Gate Input Resistance Characteristic Values Min. Typ. Max 8 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Effective Output Capacitance VGS = 0V Energy related VDS = 0.8 • VDSS Time related td(on) Resistive Switching Times tr td(off) tf 1.0  2190 pF pF 1.3 pF 92 330 pF pF 30 ns 37 ns 42 ns 18 ns 37 nC 12 nC 14 nC VGS = 10V, VDS = 0.5 • VDSS, ID = 11A RG = 10 (External) Qg(on) Qgs S 1450 Crss Co(er) Co(tr) 22 VGS = 10V, VDS = 0.5 • VDSS, ID = 11A Qgd OVERMOLDED TO-220 (IXFP...M) oP 1 2 3 Terminals: 1 - Gate 2 - Drain 3 - Source 3.37 C/W RthJC RthCS C/W 0.50 Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max IS VGS = 0V 22 A ISM Repetitive, Pulse Width Limited by TJM 88 A VSD IF = IS, VGS = 0V, Note 1 1.4 V trr QRM IRM IF = 11A, -di/dt = 100A/µs 145 890 12 ns nC A 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 VR = 100V Note 1. Pulse test, t  300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXFP22N65X2M Fig. 2. Extended Output Characteristics @ TJ = 25oC Fig. 1. Output Characteristics @ TJ = 25oC 60 VGS = 10V 9V 20 V GS = 10V 50 8V 16 9V I D - Amperes I D - Amperes 40 12 7V 8 8V 30 20 7V 6V 4 10 5V 0 6V 0 0 0.5 1 1.5 2 2.5 3 3.5 0 10 15 20 25 30 VDS - Volts VDS - Volts Fig. 3. Output Characteristics @ TJ = 125oC Fig. 4. RDS(on) Normalized to ID = 11A Value vs. Junction Temperature 3.8 V GS = 10V 20 3.4 8V R DS(on) - Normalized 7V 12 8 6V 4 5V V GS = 10V 3.0 16 I D - Amperes 5 2.6 I D = 22A 2.2 1.8 I D = 11A 1.4 1.0 0.6 4V 0 0.2 0 5.0 1 2 3 4 6 7 -50 -25 0 25 50 75 100 125 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 11A Value vs. Drain Current Fig. 6. Normalized Breakdown & Threshold Voltages vs. Junction Temperature 1.3 VGS = 10V 150 1.2 o TJ = 125 C 4.0 3.5 3.0 o 2.5 TJ = 25 C 2.0 1.5 BV DSS / VGS(th) - Normalized 4.5 R DS(on) - Normalized 5 BVDSS 1.1 1.0 0.9 0.8 VGS(th) 0.7 1.0 0.5 0.6 0 10 20 30 I D - Amperes © 2020 IXYS CORPORATION, All Rights Reserved 40 50 -60 -40 -20 0 20 40 60 80 TJ - Degrees Centigrade 100 120 140 160 IXFP22N65X2M Fig. 7. Input Admittance Fig. 8. Transconductance 24 o 20 TJ = - 40 C 20 g f s - Siemens I D - Amperes 16 o TJ = 125 C 12 o 25 C o - 40 C 8 4 o 25 C 16 o 125 C 12 8 4 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 0 2 4 6 8 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 12 14 16 18 20 22 Fig. 10. Gate Charge 70 10 VDS = 325V 60 I D = 11A 8 I G = 10mA V GS - Volts 50 I S - Amperes 10 I D - Amperes 40 30 o TJ = 125 C 20 6 4 o TJ = 25 C 2 10 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 0 5 10 15 V SD - Volts 20 25 30 35 40 QG - NanoCoulombs Fig. 12. Output Capacitance Stored Energy Fig. 11. Capacitance 20 100000 18 16 1000 EOSS - MicroJoules Capacitance - PicoFarads 10000 Ciss 100 Coss 10 14 12 10 8 6 4 1 f = 1 MHz Crss 2 0.1 0 1 10 100 1000 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0 100 200 300 VDS - Volts 400 500 600 IXFP22N65X2M Fig. 13. Forward-Bias Safe Operating Area Fig. 14. Maximum Transient Thermal Impedance 100 10 RDS(on) Limit 25µs I D - A m p ere s 100µs Z (th)JC - K / W 1 10 0.1 1 0.01 o TJ = 150 C o TC = 25 C Single Pulse 1ms 10ms 0.1 10 100 VDS - Volts © 2020 IXYS CORPORATION, All Rights Reserved 1,000 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width - Seconds IXYS REF: F_22N65X2(X4-S602) 3-24-17 IXFP22N65X2M Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.