IXFP26N50P3

IXFA26N50P3 IXFP26N50P3 IXFQ26N50P3 IXFH26N50P3 Polar3TM HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-263 (IXFA) VDSS ID25 = 500V = 26A   250m RDS(on) TO-3P (IXFQ) TO-220 (IXFP) G S G D S D (Tab) G D D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 500 V VDGR TJ = 25C to 150C, RGS = 1M 500 V VGSS VGSM Continuous Transient  30  40 V V ID25 TC = 25C 26 A IDM TC = 25C, Pulse Width Limited by TJM 78 A IA TC = 25C 13 A EAS TC = 25C 300 mJ dv/dt IS  IDM, VDD  VDSS, TJ  150°C 35 V/ns PD TC = 25C 500 W -55 ... +150  C 150  C Tstg -55 ... +150  C TL TSOLD Maximum Lead Temperature for Soldering Plastic Body for 10s 300 260 °C °C FC Md Mounting Force (TO-263) 10..65 / 2.2..14.6 Mounting Torque (TO-220, TO-3P & TO-247) 1.13 / 10 N/lb Nm/lb.in Weight TO-263 TO-220 TO-3P TO-247 G 2.5 3.0 5.5 6.0 g g g g Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 500    VGS(th) VDS = VGS, ID = 4mA 3.0 IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 © 2018 IXYS CORPORATION, All Rights Reserved 5.0 V           100 nA 25 A 750 A 250 m D (Tab) D = Drain Tab = Drain Fast Intrinsic Rectifier Avalanche Rated Low RDS(ON) and QG Low Package Inductance Advantages   V S Features  Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) D G = Gate S = Source  TJ = 125C D (Tab) TO-247 (IXFH) TJM TJ S High Power Density Easy to Mount Space Savings Applications      Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters Laser Drivers AC and DC Motor Drives Robotics and Servo Controls DS100457D(6/18) IXFA26N50P3 IXFP26N50P3 IXFQ26N50P3 IXFH26N50P3 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max gfs VDS = 20V, ID = 0.5 • ID25, Note 1 14 RGi Gate Input Resistance Ciss Coss 23 S 2.1  2220 pF VGS = 0V, VDS = 25V, f = 1MHz C rss 280 pF 8 pF 108 185 pF pF 21 ns Effective Output Capacitance Co(er) Co(tr) Energy related td(on) Resistive Switching Times tr td(off) tf Time related VGS = 0V VDS = 0.8 • VDSS VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 3(External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 7 ns 38 ns 5 ns 42 nC 11 nC 15 nC 0.25 C/W RthJC RthCS TO-220 TO-3P & TO-247 C/W C/W 0.50 0.25 Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS VGS = 0V ISM Characteristic Values Min. Typ. Max 26 A Repetitive, pulse Width Limited by TJM 104 A VSD IF = IS, VGS = 0V, Note 1 1.4 V t rr QRM IRM IF = 13A, -di/dt = 100A/μs Note 0.9 10.2 VR = 100V 250 ns nC A 1. Pulse test, t  300s, duty cycle, d  2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFA26N50P3 IXFP26N50P3 IXFQ26N50P3 IXFH26N50P3 o o Fig. 1. Output Characteristics @ TJ = 25 C Fig. 2. Extended Output Characteristics @ TJ = 25 C 28 VGS = 10V 8V 7V 24 7V 40 20 6V I D - Amperes I D - Amperes VGS = 10V 8V 50 16 12 30 6V 20 8 4 10 5V 5V 0 0 0 1 2 3 4 5 6 7 0 5 10 15 VDS - Volts 25 30 Fig. 4. RDS(on) Normalized to ID = 13A Value vs. Junction Temperature o Fig. 3. Output Characteristics @ TJ = 125 C 28 3.4 VGS = 10V 7V 20 3.0 RDS(on) - Normalized 24 I D - Amperes 20 VDS - Volts 6V 16 12 5V 8 VGS = 10V 2.6 I D = 26A 2.2 1.8 I D = 13A 1.4 1.0 4 0.6 4V 0 0.2 0 2 3.8 4 6 8 10 12 14 16 -50 -25 0 25 50 75 100 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 13A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 28 125 150 VGS = 10V 3.4 24 o TJ = 125 C 20 I D - Amperes RDS(on) - Normalized 3.0 2.6 2.2 o 1.8 TJ = 25 C 16 12 8 1.4 4 1.0 0 0.6 -50 0 5 10 15 20 25 30 35 I D - Amperes © 2018 IXYS CORPORATION, All Rights Reserved 40 45 50 55 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 IXFA26N50P3 IXFP26N50P3 IXFQ26N50P3 IXFH26N50P3 Fig. 8. Transconductance Fig. 7. Input Admittance 45 30 o TJ = - 40 C 40 25 35 o 15 g f s - Siemens I D - Amperes 20 o TJ = 125 C o 25 C o - 40 C 10 25 C 30 o 125 C 25 20 15 10 5 5 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0 6.5 5 10 15 VGS - Volts 20 25 30 I D - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 10 80 VDS = 250V 9 70 I D = 13A 8 I G = 10mA 60 VGS - Volts I S - Amperes 7 50 40 30 6 5 4 o TJ = 125 C 3 o TJ = 25 C 20 2 10 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0 5 10 15 VSD - Volts 25 30 35 40 45 Fig. 12. Output Capacitance Stored Energy Fig. 11. Capacitance 14 10,000 Ciss 12 1,000 E OSS - MicroJoules Capacitance - PicoFarads 20 QG - NanoCoulombs Coss 100 10 C rss 10 8 6 4 2 f = 1 MHz 0 1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0 50 100 150 200 250 300 VDS - Volts 350 400 450 500 IXFA26N50P3 IXFP26N50P3 IXFQ26N50P3 IXFH26N50P3 Fig. 14. Maximum Transient Thermal Impedance Fig. 13. Forward-Bias Safe Operating Area 1 100 RDS(on) Limit 25μs 100μs 0.1 Z (th )JC - K / W I D - A m p e re s 10 1 0.01 o TJ = 150 C o TC = 25 C Single Pulse 1ms 0.1 10 100 VDS - Volts © 2018 IXYS CORPORATION, All Rights Reserved 1,000 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS REF: F_26N50P3(W6) 5-19-17-B IXFA26N50P3 IXFP26N50P3 IXFQ26N50P3 IXFH26N50P3 TO-263 Outline TO-220 Outline 1 - Gate 2,4 - Drain 3 - Source 1 - Gate 2,4 - Drain 3 - Source TO-247 Outline 1 - Gate 2,4 - Drain 3 - Source TO-3P Outline 1 - Gate 2,4 - Drain 3 - Source IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. 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