IXFP270N06T3

Advance Technical Information IXFA270N06T3 IXFP270N06T3 IXFH270N06T3 TrenchT3TM HiperFETTM Power MOSFET VDSS ID25 = 60V = 270A   3.1m RDS(on) N-Channel Enhancement Mode Avalanche Rated Fast Intrnsic Rectifier TO-263 AA (IXFA) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 175C 60 V VDGR TJ = 25C to 175C, RGS = 1M 60 V VGSM Transient  20 V ID25 ILRMS TC = 25C Lead Current Limit, RMS 270 160 A A IDM TC = 25C, Pulse Width Limited by TJM 675 A IA TC = 25C 135 A EAS TC = 25C 1.5 J PD TC = 25C 480 W TO-220AB (IXFP) -55 ... +175  C TJM 175  C Tstg -55 ... +175  C TJ TL TSOLD Maximum Lead Temperature for Soldering Plastic Body for 10s 300 260 °C °C FC Md Mounting Force (TO-263) Mounting Torque (TO-220 & TO-247) 10..65 / 2.2..14.6 1.13 / 10 N/lb m/lb.in Weight TO-263 TO-220 TO-247 2.5 3.0 6.0 g g g G G VGS(th) VDS = VGS, ID = 250A 2.0 IGSS VGS =  20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V V             200 nA 10 A TJ = 150C RDS(on) V 4.0 VGS = 10V, ID = 100A, Notes 1, 2 © 2016 IXYS CORPORATION, All Rights Reserved D (Tab) D = Drain Tab = Drain Features      60 S International Standard Packages 175°C Operating Temperature High Current Handling Capability Avalanche Rated Fast Intrinsic Rectifier Low RDS(on) Advantages Characteristic Values Min. Typ. Max. VGS = 0V, ID = 250A D G = Gate S = Source  BVDSS D (Tab) TO-247 (IXFH)  Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) DS 1.5 mA 3.1 m   Easy to Mount Space Savings High Power Density Applications    DC-DC Converters & Off-Line UPS Primary-Side Switch High Current Switching Applications DS100698A(01/16) IXFA270N06T3 IXFP270N06T3 IXFH270N06T3 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 10V, ID = 60A, Note 1 83 138 S 12.6 nF 1380 pF 62 pF 1.1  39 ns 36 ns 48 ns 20 ns 200 nC 68 nC 40 nC Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss RGi td(on) tr td(off) tf Gate Input Resistance Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 3 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.31 C/W RthJC RthCS TO-220 TO-247 C/W C/W 0.50 0.21 Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V ISM Repetitive, Pulse Width Limited by TJM VSD IF = 100A, VGS = 0V, Note 1 trr IF = 135A, VGS = 0V 47 ns IRM -di/dt = 100A/s VR = 40V 23 A 530 nC QRM 270 A 1080 A 1.4 V Notes: 1. Pulse test, t  300s, duty cycle, d  2%. 2. On through-hole packages, RDS(on) Kelvin test contact location must be 5mm or less from the package body. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFA270N06T3 IXFP270N06T3 IXFH270N06T3 Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Extended Output Characteristics @ TJ = 25ºC 350 280 VGS = 10V VGS = 15V 10V 9V 240 300 250 200 7V I D - Amperes I D - Amperes 7V 8V 160 120 6V 80 6.5V 200 150 6V 100 40 50 5V 5V 0 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0 2 3 4 5 6 7 8 9 VDS - Volts Fig. 3. Output Characteristics @ TJ = 150ºC Fig. 4. Normalized RDS(on) to ID = 135A Value vs. Junction Temperature 2.2 280 VGS = 15V 10V 9V 8V 240 1.8 RDS(on) - Normalized 7V 160 6V 120 10 VGS = 10V 2.0 200 I D - Amperes 1 VDS - Volts 80 ID = 270A 1.6 ID = 135A 1.4 1.2 1.0 5V 40 0.8 4V 0 0.6 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 -50 1.8 -25 0 Fig. 5. Normalized RDS(on) to ID = 135A vs. Drain Current 2.4 75 100 125 150 175 160 External Lead Current Limit 140 2.0 TJ = 175ºC 120 1.8 I D - Amperes RDS(on) - Normalized 50 Fig. 6. Drain Current vs. Case Temperature 180 VGS = 10V 15V 2.2 25 TJ - Degrees Centigrade VDS - Volts 1.6 1.4 1.2 100 80 60 40 TJ = 25ºC 1.0 20 0 0.8 0 40 80 120 160 I D - Amperes © 2016 IXYS CORPORATION, All Rights Reserved 200 240 280 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 175 IXFA270N06T3 IXFP270N06T3 IXFH270N06T3 Fig. 7. Input Admittance Fig. 8. Transconductance 280 160 VDS = 10V 140 120 TJ = - 40ºC 200 g f s - Siemens I D - Amperes VDS = 10V 240 100 80 TJ = 150ºC 60 25ºC 25ºC 160 150ºC 120 80 40 - 40ºC 40 20 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0 6.5 20 40 60 100 120 140 160 Fig. 10. Gate Charge Fig. 9. Forward Voltage Drop of Intrinsic Diode 10 300 VDS = 30V 9 250 I D = 135A 8 I G = 10mA 7 VGS - Volts 200 I S - Amperes 80 I D - Amperes VGS - Volts 150 TJ = 150ºC 100 6 5 4 3 TJ = 25ºC 2 50 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0 1.2 20 40 60 80 100 120 140 160 180 200 QG - NanoCoulombs VSD - Volts Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area 100000 1000 RDS(on) Limit f = 1 MHz 100 External Lead Limit I D - Amperes Capacitance - PicoFarads C iss 10000 1000 C oss 100µs 10 1ms 1 100 TJ = 175ºC 10ms TC = 25ºC Crss DC Single Pulse 0.1 10 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 VDS - Volts 100 IXFA270N06T3 IXFP270N06T3 IXFH270N06T3 Fig. 14. Resistive Turn-on Rise Time vs. Drain Current Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature 39 40 RG = 3Ω , VGS = 10V 39 RG = 3Ω , VGS = 10V 38 VDS = 30V TJ = 25ºC 38 37 t r - Nanoseconds t r - Nanoseconds VDS = 30V I D = 270A 37 36 35 34 I D = 135A 36 35 TJ = 150ºC 34 33 33 32 32 25 50 75 100 125 120 150 140 160 180 TJ - Degrees Centigrade Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 600 tr tf td(on) 125 22 200 50 100 25 0 t f - Nanoseconds t r - Nanoseconds 75 I D = 135A 23 6 8 10 12 14 16 55 I D = 135A 20 50 I D = 270A 45 18 25 50 75 100 40 150 125 Fig. 17. Resistive Turn-off Switching Times vs. Drain Current Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance 300 70 td(off) tf 250 50 TJ = 150ºC 20 19 160 180 200 200 200 150 150 I D = 270A 100 100 50 50 40 TJ = 25ºC 140 250 VDS = 30V t f - Nanoseconds 21 I D = 270A, 135A TJ = 150ºC, VGS = 10V 60 TJ = 25ºC td(off) 300 220 240 I D - Amperes © 2016 IXYS CORPORATION, All Rights Reserved 260 30 280 0 0 2 4 6 8 10 RG - Ohms 12 14 16 18 t d(off) - Nanoseconds VDS = 30V t d(off) - Nanoseconds t f - Nanoseconds 21 18 RG = 3Ω, VGS = 10V 120 60 VDS = 30V TJ - Degrees Centigrade tf 65 td(off) RG - Ohms 22 280 19 0 4 260 t d(off) - Nanoseconds 300 t d(on) - Nanoseconds 100 I D = 270A 2 240 RG = 3Ω, VGS = 10V VDS = 30V 400 220 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 23 150 TJ = 150ºC, VGS = 10V 500 200 I D - Amperes IXFA270N06T3 IXFP270N06T3 IXFH270N06T3 Fig. 19. Maximum Transient Thermal Impedance 1 Z (th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds E L2 D 1 2 3 A c2 1 = Gate 2,4 = Drain 3 = Source E E1 4 L b (D2) D 1 2 0P S E2 D T 4 4 3 1 2 3 (E1) c L1 A2 EJECTOR PIN R U H1 Q L3 A2 E2/2 Q D1 L1 A E A A1 0P D1 b2 e TO-247 Outline TO-220 Outline TO-263 Outline L1 L L A1 L4 0- 8 L1 e c e1 3X b 3X b2 1 = Gate 2,4 = Drain 3 = Source b2 b4 b e c A1 1 = Gate 2,4 = Drain 3 = Source W BOTTOM FLATNESS IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: F_270N06T3(U6-M05) 1-27-16 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. 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