IXFP30N25X3

IXFY30N25X3 IXFA30N25X3 IXFP30N25X3 X3-Class HiPERFETTM Power MOSFET VDSS ID25 RDS(on) = 250V = 30A  60m  N-Channel Enhancement Mode D TO-252 (IXFY) G G S S D (Tab) TO-263 (IXFA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 250 V VDGR TJ = 25C to 150C, RGS = 1M 250 V VGSS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C 30 A IDM TC = 25C, Pulse Width Limited by TJM 45 A IA TC = 25C 15 A EAS TC = 25C 300 mJ dv/dt IS  IDM, VDD  VDSS, TJ  150°C 50 V/ns PD TC = 25C 170 W -55 ... +150 C TJM 150 C Tstg -55 ... +150 C 300 260 °C °C 10..65 / 2.2..14.6 1.13 / 10 N/lb Nm/lb.in 0.35 2.50 3.00 g g g TJ TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s FC Md Mounting Force (TO-263) Mounting Torque (TO-220) Weight TO-252 TO-263 TO-220 G S D (Tab) TO-220 (IXFP) G D S G = Gate S = Source Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 250 VGS(th) VDS = VGS, ID = 500μA 2.5 IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V       4.5 V 5 A 250 A TJ = 125C © 2019 IXYS CORPORATION, All Rights Reserved. High Power Density Easy to Mount Space Savings V 100 nA VGS = 10V, ID = 0.5 • ID25, Note 1 International Standard Packages Low RDS(ON) and QG Avalanche Rated Low Package Inductance Advantages Applications     RDS(on) D = Drain Tab = Drain Features  Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) D (Tab) 48 60 m  Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters PFC Circuits AC and DC Motor Drives Robotics and Servo Controls DS100848E(11/19) IXFY30N25X3 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs VDS = 10V, ID = 0.5 • ID25, Note 1 RGi Gate Input Resistance Characteristic Values Min. Typ. Max 14 Ciss Coss IXFA30N25X3 IXFP30N25X3 23 S 1.8  1450 pF 266 pF 1 pF 115 410 pF pF 16 ns 24 ns 77 ns 20 ns 21 nC 6 nC 6 nC VGS = 0V, VDS = 25V, f = 1MHz Crss Effective Output Capacitance Co(er) Co(tr) Energy related td(on) Resistive Switching Times tr td(off) tf Time related VGS = 0V VDS = 0.8 • VDSS VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 30 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.73 C/W RthJC RthCS TO-220 C/W 0.50 Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS VGS = 0V ISM Characteristic Values Min. Typ. Max 30 A Repetitive, pulse Width Limited by TJM 120 A VSD IF = IS, VGS = 0V, Note 1 1.4 V trr QRM IRM IF = 15A, -di/dt = 100A/μs 82 290 7 ns nC A 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 VR = 100V Note 1. Pulse test, t  300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXFY30N25X3 o o Fig. 2. Extended Output Characteristics @ TJ = 25 C Fig. 1. Output Characteristics @ TJ = 25 C 30 70 VGS = 10V 8V VGS = 10V 60 25 50 I D - Amperes I D - Amperes 8V 7V 20 15 6V 10 7V 40 30 6V 20 5 10 5V 5V 0 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 0 5 10 15 VDS - Volts 20 25 30 VDS - Volts Fig. 4. RDS(on) Normalized to ID = 15A Value vs. Junction Temperature o Fig. 3. Output Characteristics @ TJ = 125 C 3.2 30 VGS = 10V 8V 25 VGS = 10V 2.8 RDS(on) - Normalized 7V 20 I D - Amperes IXFA30N25X3 IXFP30N25X3 6V 15 10 5V 5 2.4 I D = 30A 2.0 I D = 15V 1.6 1.2 0.8 4V 0.4 0 0 3.5 0.5 1 1.5 2 2.5 3 3.5 4 -50 4.5 -25 0 25 50 75 125 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 15A Value vs. Drain Current Fig. 6. Normalized Breakdown & Threshold Voltages vs. Junction Temperature 1.2 VGS = 10V 3.0 BVDSS / VGS(th) - Normalized 2.5 2.0 o TJ = 25 C 1.5 150 BVDSS 1.1 o TJ = 125 C RDS(on) - Normalized 100 VDS - Volts 1.0 0.9 0.8 VGS(th) 0.7 1.0 0.6 0.5 0 10 20 30 40 I D - Amperes © 2019 IXYS CORPORATION, All Rights Reserved. 50 60 70 -60 -40 -20 0 20 40 60 80 TJ - Degrees Centigrade 100 120 140 160 IXFY30N25X3 Fig. 7. Maximum Drain Current vs. Case Temperature Fig. 8. Input Admittance 40 35 VDS = 10V 35 30 30 I D - Amperes 25 I D - Amperes IXFA30N25X3 IXFP30N25X3 20 15 25 20 o TJ = 125 C 15 o 25 C 10 o 10 5 - 40 C 5 0 0 -50 -25 0 25 50 75 100 125 3.5 150 4.0 4.5 5.0 TC - Degrees Centigrade 5.5 6.0 6.5 7.0 VGS - Volts Fig. 9. Transconductance Fig. 10. Forward Voltage Drop of Intrinsic Diode 45 140 40 o TJ = - 40 C VDS = 10V 120 100 30 o 25 C I S - Amperes g f s - Siemens 35 25 o 20 125 C 15 80 60 o TJ = 125 C 40 10 o TJ = 25 C 20 5 0 0 0 5 10 15 20 25 30 35 40 0.2 0.4 0.6 0.8 I D - Amperes 1.2 1.4 1.6 Fig. 12. Capacitance Fig. 11. Gate Charge 10,000 10 9 VDS = 125V Capacitance - PicoFarads I D = 15A 8 I G = 10mA 7 VGS - Volts 1.0 VSD - Volts 6 5 4 3 2 Ciss 1,000 100 Coss 10 Crss 1 f = 1 MHz 1 0 0 0 2 4 6 8 10 12 14 16 18 20 22 QG - NanoCoulombs IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 100 VDS - Volts 1,000 IXFY30N25X3 Fig. 13. Output Capacitance Stored Energy IXFA30N25X3 IXFP30N25X3 Fig. 14. Forward-Bias Safe Operating Area 100 3.5 RDS(on) Limit 10 2.5 I D - Amperes EOSS - MicroJoules 3.0 2.0 1.5 1.0 100μs 1 1ms o 0.1 TJ = 150 C DC o TC = 25 C Single Pulse 0.5 10ms 0.01 0.0 0 50 100 150 200 250 1 10 100 1,000 VDS - Volts VDS - Volts Fig. 15. Maximum Transient Thermal Impedance 1 Z(th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width - Second © 2019 IXYS CORPORATION, All Rights Reserved. IXYS REF: F_30N25X3(22-S202) 6-28-17 IXFY30N25X3 TO-252 Outline E b3 4 A L3 TO-263 Outline E c2 C2 TO-220 Outline A E1 L1 A1 L4 1 2 A2 3 L1 e e1 e1 b2 L L2 c 0 5.55MIN OPTIONAL 1 1 - Gate 2,4 - Drain 3 - Source 2 L2 3 b2 A1 6.40 A1 H1 Q D2 D b L3 c e 0.43 [11.0] D1 e E1 0 2.85MIN 2.28 1.25MIN LAND PATTERN RECOMMENDATION IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.20 [5.0] 0.10 [2.5] A2 EJECTOR PIN 0.66 [16.6] A2 1 - Gate 2,4 - Drain 3 - Source 4 A oP 4 H 0.34 [8.7] 6.50MIN BOTTOM VIEW E D1 D H IXFA30N25X3 IXFP30N25X3 L1 L 0.12 [3.0] 0.06 [1.6] e c e1 3X b 3X b2 1 - Gate 2,4 - Drain 3 - Source IXFY30N25X3 IXFA30N25X3 IXFP30N25X3 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. © 2019 IXYS CORPORATION, All Rights Reserved.