IXFP30N25X3M

IXFP30N25X3M X3-Class HiPerFETTM Power MOSFET VDSS ID25 RDS(on) D = 250V = 30A  60m  (Electrically Isolated Tab) G N-Channel Enhancement Mode OVERMOLDED TO-220 S Symbol Test Conditions VDSS TJ = 25C to 150C Maximum Ratings 250 V VDGR TJ = 25C to 150C, RGS = 1M 250 V VGSS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C, Limited by TJM 30 A IDM TC = 25C, Pulse Width Limited by TJM 45 A IA TC = 25C 15 A EAS TC = 25C 300 mJ dv/dt IS  IDM, VDD  VDSS, TJ  150°C 50 V/ns PD TC = 25C 36 W -55 ... +150 C TJM 150 C Tstg -55 ... +150 C 300 260 °C °C 2500 V~ 1.13 / 10 Nm/lb.in 2.5 g TJ TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s VISOL 50/60 Hz, 1 Minute Md Mounting Torque Weight G G = Gate S = Source       BVDSS VGS = 0V, ID = 250μA 250 VGS(th) VDS = VGS, ID = 500μA 2.5 IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 15A, Note 1 4.5  V  V  5 A 250 A © 2019 IXYS CORPORATION, All Rights Reserved 48 International Standard Package Plastic Overmolded Tab Low RDS(ON) and QG Avalanche Rated 2500V~ Electrical Isolation Low Package Inductance High Power Density Easy to Mount Space Savings Applications 100 nA TJ = 125C D = Drain Advantages  Characteristic Values Min. Typ. Max. Isolated Tab Features  Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) DS    Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters PFC Circuits AC and DC Motor Drives Robotics and Servo Controls 60 m DS100849D(11/19) IXFP30N25X3M Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs VDS = 10V, ID = 15A, Note 1 RGi Gate Input Resistance Characteristic Values Min. Typ. Max 14 Ciss Coss 23 S 1.8  1450 pF 266 pF 1 pF 115 410 pF pF 16 ns 24 ns 77 ns 20 ns 21 nC 6 nC 6 nC VGS = 0V, VDS = 25V, f = 1MHz Crss OVERMOLDED TO-220 (IXFP...M) oP 1 2 3 Effective Output Capacitance Co(er) Co(tr) td(on) tr td(off) tf Energy related Time related VGS = 0V VDS = 0.8 • VDSS Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 15A RG = 30 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 15A Qgd Terminals: 1 - Gate 2 - Drain 3 - Source 3.5 C/W RthJC RthCS 0.50 C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS VGS = 0V ISM Characteristic Values Min. Typ. Max 30 A Repetitive, Pulse Width Limited by TJM 120 A VSD IF = IS, VGS = 0V, Note 1 1.4 V trr QRM IRM IF = 15A, -di/dt = 100A/μs 82 290 7 ns nC A 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 VR = 100V Note 1. Pulse test, t  300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXFP30N25X3M o o Fig. 2. Extended Output Characteristics @ TJ = 25 C Fig. 1. Output Characteristics @ TJ = 25 C 30 70 VGS = 10V 8V VGS = 10V 60 25 50 I D - Amperes 20 I D - Amperes 8V 7V 15 6V 10 7V 40 30 6V 20 5 10 5V 5V 0 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 0 5 10 15 VDS - Volts 25 30 Fig. 4. RDS(on) Normalized to ID = 15A Value vs. Junction Temperature o Fig. 3. Output Characteristics @ TJ = 125 C 3.2 30 VGS = 10V 8V 25 VGS = 10V 2.8 RDS(on) - Normalized 7V 20 I D - Amperes 20 VDS - Volts 6V 15 10 5V 5 2.4 I D = 30A 2.0 I D = 15V 1.6 1.2 0.8 4V 0.4 0 0 3.5 0.5 1 1.5 2 2.5 3 3.5 4 -50 4.5 -25 0 25 50 75 125 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 15A Value vs. Drain Current Fig. 6. Normalized Breakdown & Threshold Voltages vs. Junction Temperature 1.2 VGS = 10V 3.0 BVDSS / VGS(th) - Normalized 2.5 2.0 o TJ = 25 C 1.5 150 BVDSS 1.1 o TJ = 125 C RDS(on) - Normalized 100 VDS - Volts 1.0 0.9 0.8 VGS(th) 0.7 1.0 0.6 0.5 0 10 20 30 40 I D - Amperes © 2019 IXYS CORPORATION, All Rights Reserved 50 60 70 -60 -40 -20 0 20 40 60 80 TJ - Degrees Centigrade 100 120 140 160 IXFP30N25X3M Fig. 8. Transconductance Fig. 7. Input Admittance 45 40 VDS = 10V 35 40 35 g f s - Siemens 30 I D - Amperes o TJ = - 40 C VDS = 10V 25 20 o TJ = 125 C 15 o 25 C o 10 - 40 C 30 o 25 C 25 o 20 125 C 15 10 5 5 0 0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 0 7.0 5 10 15 30 35 40 10 9 120 VDS = 125V I D = 15A 8 100 I G = 10mA 7 VGS - Volts I S - Amperes 25 Fig. 10. Gate Charge Fig. 9. Forward Voltage Drop of Intrinsic Diode 140 80 60 o TJ = 125 C 6 5 4 3 40 o 2 TJ = 25 C 20 1 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 1.6 2 4 VSD - Volts 6 8 10 12 14 16 18 20 22 QG - NanoCoulombs Fig. 12. Output Capacitance Stored Energy Fig. 11. Capacitance 3.5 10,000 3.0 Ciss 1,000 EOSS - MicroJoules Capacitance - PicoFarads 20 I D - Amperes VGS - Volts 100 Coss 10 Crss 2.5 2.0 1.5 1.0 1 0.5 f = 1 MHz 0 0.0 1 10 100 1,000 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0 50 100 150 VDS - Volts 200 250 IXFP30N25X3M Fig. 14. Maximum Transient Thermal Impedance Fig. 13. Forward-Bias Safe Operating Area 10 100 RDS(on) Limit 1 Z (th)JC - K / W I D - Amperes 10 100μs 1 0.1 1ms o 0.1 TJ = 150 C DC o TC = 25 C Single Pulse 0.01 10ms 0.01 1 10 100 VDS - Volts © 2019 IXYS CORPORATION, All Rights Reserved 1,000 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width - Seconds IXYS REF: F_30N25X3(22-S202) 6-28-17 IXFP30N25X3M Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.