IXFP34N65X2

IXFA34N65X2 IXFP34N65X2 IXFH34N65X2 X2-Class HiPerFETTM Power MOSFET VDSS ID25 = 650V = 34A  100m  RDS(on) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-263 AA (IXFA) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 650 V VDGR TJ = 25C to 150C, RGS = 1M 650 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C 34 A IDM TC = 25C, Pulse Width Limited by TJM 68 A IA TC = 25C 10 A EAS TC = 25C 1 J dv/dt IS  IDM, VDD  VDSS, TJ  150°C 50 V/ns PD TC = 25C 540 W -55 ... +150 C TJ TJM 150 C Tstg -55 ... +150 C 300 260 °C °C 10.65 / 2.2..14.6 1.13 / 10 N/lb Nm/lb.in TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s FC Md Mounting Force (TO-263) Mounting Torque (TO-220 & TO-247) Weight TO-263 TO-220 TO-247 2.5 3.0 6.0 g g g TO-220AB (IXFP) G DS D (Tab) TO-247 (IXFH) G D S G = Gate S = Source D (Tab) D = Drain Tab = Drain Features     International Standard Packages Low RDS(ON) and QG Avalanche Rated Low Package Inductance Advantages Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 650 VGS(th) VDS = VGS, ID = 2.5mA 3.5 IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on)   V 5.0 V 100 nA TJ = 125C VGS = 10V, ID = 0.5 • ID25, Note 1  Applications 10 A 1.75 mA  100 m     © 2016 IXYS CORPORATION, All Rights Reserved High Power Density Easy to Mount Space Savings Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters PFC Circuits AC and DC Motor Drives Robotics and Servo Controls DS100683C(03/16) IXFA34N65X2 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max gfs VDS = 10V, ID = 0.5 • ID25, Note 1 12 RGi Gate Input Resistance Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz 20 S 0.8  3230 pF 2000 pF 2 pF 130 486 pF pF 37 ns 60 ns 64 ns 30 ns 56 nC 19 nC 18 nC Crss IXFP34N65X2 IXFH34N65X2 Effective Output Capacitance Co(er) Co(tr) td(on) tr td(off) tf Energy related Time related VGS = 0V VDS = 0.8 • VDSS Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 10 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.23 C/W RthJC RthCS TO-220 TO-247 C/W C/W 0.50 0.25 Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS VGS = 0V ISM Characteristic Values Min. Typ. Max 34 A Repetitive, pulse Width Limited by TJM 136 A VSD IF = IS, VGS = 0V, Note 1 1.4 V trr QRM IRM IF = 17A, -di/dt = 100A/μs 164 1.2 14.4 ns μC A 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 VR = 100V Note 1. Pulse test, t  300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXFA34N65X2 IXFP34N65X2 IXFH34N65X2 Fig. 2. Extended Output Characteristics @ TJ = 25ºC Fig. 1. Output Characteristics @ TJ = 25ºC 35 80 VGS = 10V VGS = 10V 9V 30 70 9V 60 25 I D - Amperes I D - Amperes 8V 20 7V 15 8V 50 40 30 7V 10 20 6V 5 6V 10 5V 0 5V 0 0 0.5 1 1.5 2 2.5 3 0 3.5 5 10 15 VDS - Volts 30 Fig. 4. RDS(on) Normalized to ID = 17A Value vs. Junction Temperature 3.8 35 VGS = 10V 9V VGS = 10V 3.4 8V 3.0 RDS(on) - Normalized 25 I D - Amperes 25 VDS - Volts Fig. 3. Output Characteristics @ TJ = 125ºC 30 20 7V 20 15 6V 10 2.6 I D = 34A 2.2 1.8 I D = 17A 1.4 1.0 5V 5 0.6 4V 0.2 0 0 1 2 3 4 5 6 7 8 -50 9 -25 0 25 50 75 100 125 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 17A Value vs. Drain Current Fig. 6. Normalized Breakdown & Threshold Voltages vs. Junction Temperature 4.6 150 1.3 VGS = 10V 4.2 1.2 BVDSS / VGS(th) - Normalized 3.8 R DS(on) - Normalized TJ = 125ºC 3.4 3.0 2.6 2.2 TJ = 25ºC 1.8 1.4 BVDSS 1.1 1.0 0.9 0.8 VGS(th) 0.7 1.0 0.6 0.6 0 10 20 30 40 50 I D - Amperes © 2016 IXYS CORPORATION, All Rights Reserved 60 70 80 -60 -40 -20 0 20 40 60 80 TJ - Degrees Centigrade 100 120 140 160 IXFA34N65X2 Fig. 8. Input Admittance 40 40 35 35 30 30 25 25 I D - Amperes I D - Amperes Fig. 7. Maximum Drain Current vs. Case Temperature IXFP34N65X2 IXFH34N65X2 20 15 20 15 10 10 5 5 0 TJ = 125ºC 25ºC - 40ºC 0 -50 -25 0 25 50 75 100 125 150 3.5 4.0 4.5 5.0 TC - Degrees Centigrade 5.5 6.0 6.5 7.0 7.5 8.0 VGS - Volts Fig. 9. Transconductance Fig. 10. Forward Voltage Drop of Intrinsic Diode 35 120 TJ = - 40ºC 30 100 25ºC 80 20 I S - Amperes g f s - Siemens 25 125ºC 15 60 40 10 TJ = 125ºC 20 5 0 TJ = 25ºC 0 0 5 10 15 20 25 30 35 40 45 0.3 0.4 0.5 0.6 I D - Amperes 0.8 0.9 1.0 1.1 1.2 1.3 VSD - Volts Fig. 12. Capacitance Fig. 11. Gate Charge 10 100,000 f = 1 MHz VDS = 325V Capacitance - PicoFarads I D = 17A 8 I G = 10mA VGS - Volts 0.7 6 4 2 10,000 Ciss 1,000 Coss 100 10 0 Crss 1 0 5 10 15 20 25 30 35 40 45 50 55 60 QG - NanoCoulombs IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 100 VDS - Volts 1000 IXFA34N65X2 IXFP34N65X2 IXFH34N65X2 Fig. 14. Forward-Bias Safe Operating Area Fig. 13. Output Capacitance Stored Energy 100 30 25µs 25 100µs 20 I D - Amperes E OSS - MicroJoules RDS(on) Limit 10 15 1 10 TJ = 150ºC TC = 25ºC Single Pulse 5 1ms 0.1 0 0 100 200 300 400 500 10 600 100 1,000 VDS - Volts VDS - Volts Fig. 15. Maximum Transient Thermal Impedance 1 Z (th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2016 IXYS CORPORATION, All Rights Reserved IXYS REF: F_34N65X2(X5-S602) 12-14-15 IXFA34N65X2 TO-263 Outline IXFP34N65X2 IXFH34N65X2 TO-247 Outline TO-220 Outline D A A2 A B E Q S R D2 D1 D P1 1 2 4 3 L1 C 1 = Gate 2 = Drain 3 = Source 4 = Drain E1 L A1 C b b2 b4 e Pins: 1 - Gate 3 - Source IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 2 - Drain 1 - Gate 2,4 - Drain 3 - Source