IXFP36N20X3

IXFY36N20X3 IXFA36N20X3 IXFP36N20X3 X3-Class HiPERFETTM Power MOSFET VDSS ID25 RDS(on) = 200V = 36A  45m  N-Channel Enhancement Mode TO-252 (IXFY) G S D (Tab) TO-263 (IXFA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 200 V VDGR TJ = 25C to 150C, RGS = 1M 200 V VGSS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C 36 A IDM TC = 25C, Pulse Width Limited by TJM 50 A IA TC = 25C 18 A EAS TC = 25C 300 mJ dv/dt IS  IDM, VDD  VDSS, TJ  150°C 20 V/ns PD TC = 25C 170 W -55 ... +150 C TJM 150 C Tstg -55 ... +150 C 300 260 °C °C 10..65 / 2.2..14.6 1.13 / 10 N/lb Nm/lb.in 0.35 2.50 3.00 g g g TJ TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s FC Md Mounting Force (TO-263) Mounting Torque (TO-220) Weight TO-252 TO-263 TO-220 G S D (Tab) TO-220 (IXFP) G D S G = Gate S = Source Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 200 VGS(th) VDS = VGS, ID = 500μA 2.5 IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V       4.5 V 5 A 100 A TJ = 125C © 2018 IXYS CORPORATION, All Rights Reserved High Power Density Easy to Mount Space Savings V 100 nA VGS = 10V, ID = 0.5 • ID25, Note 1 International Standard Packages Low RDS(ON) and QG Avalanche Rated Low Package Inductance Advantages Applications     RDS(on) D = Drain Tab = Drain Features  Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) D (Tab) 38 45 m  Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters PFC Circuits AC and DC Motor Drives Robotics and Servo Controls DS100846D(6/18) IXFY36N20X3 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs VDS = 10V, ID = 0.5 • ID25, Note 1 RGi Gate Input Resistance Characteristic Values Min. Typ. Max 16 Ciss Coss IXFA36N20X3 IXFP36N20X3 26 S 1.6  1425 pF 280 pF 1.2 pF 130 400 pF pF 19 ns 30 ns 54 ns 20 ns 21 nC 8 nC 7 nC VGS = 0V, VDS = 25V, f = 1MHz Crss Effective Output Capacitance Co(er) Co(tr) td(on) tr td(off) tf Energy related Time related VGS = 0V VDS = 0.8 • VDSS Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 30 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.73 C/W RthJC RthCS TO-220 C/W 0.50 Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS VGS = 0V ISM Characteristic Values Min. Typ. Max 36 A Repetitive, pulse Width Limited by TJM 144 A VSD IF = IS, VGS = 0V, Note 1 1.4 V trr QRM IRM IF = 18A, -di/dt = 100A/μs 75 230 6 ns nC A 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 VR = 100V Note 1. Pulse test, t  300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXFY36N20X3 o o Fig. 2. Extended Output Characteristics @ TJ = 25 C Fig. 1. Output Characteristics @ TJ = 25 C 36 80 VGS = 10V 9V VGS = 10V 70 30 9V 8V 60 I D - Amperes 24 I D - Amperes IXFA36N20X3 IXFP36N20X3 7V 18 12 8V 50 40 7V 30 20 6V 6 6V 10 5V 0 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 0 5 10 15 VDS - Volts 3.2 36 VGS = 10V 9V 8V 30 RDS(on) - Normalized 7V 24 VGS = 10V 2.8 30 I D - Amperes 25 Fig. 4. RDS(on) Normalized to ID = 18A Value vs. Junction Temperature o Fig. 3. Output Characteristics @ TJ = 125 C 18 6V 12 6 2.4 I D = 36A 2.0 I D = 18A 1.6 1.2 0.8 5V 0.4 0 0 3.8 0.5 1 1.5 2 2.5 3 3.5 4 -50 4.5 -25 0 25 50 75 100 125 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 18A Value vs. Drain Current Fig. 6. Normalized Breakdown & Threshold Voltages vs. Junction Temperature 1.2 VGS = 10V 3.4 BVDSS / VGS(th) - Normalized o TJ = 125 C 2.6 2.2 1.8 o TJ = 25 C 1.4 150 BVDSS 1.1 3.0 RDS(on) - Normalized 20 VDS - Volts 1.0 0.9 0.8 VGS(th) 0.7 1.0 0.6 0.6 0 10 20 30 40 50 I D - Amperes © 2018 IXYS CORPORATION, All Rights Reserved 60 70 80 -60 -40 -20 0 20 40 60 80 TJ - Degrees Centigrade 100 120 140 160 IXFY36N20X3 Fig. 7. Maximum Drain Current vs. Case Temperature IXFA36N20X3 IXFP36N20X3 Fig. 8. Input Admittance 50 40 45 35 VDS = 10V 40 35 25 I D - Amperes I D - Amperes 30 20 15 30 25 20 o TJ = 125 C o 15 25 C 10 o - 40 C 10 5 5 0 0 -50 -25 0 25 50 75 100 125 3.5 150 4.0 4.5 5.0 TC - Degrees Centigrade 5.5 6.0 6.5 7.0 7.5 VGS - Volts Fig. 9. Transconductance Fig. 10. Forward Voltage Drop of Intrinsic Diode 45 140 o 40 TJ = - 40 C VDS = 10V 120 100 30 o 25 C I S - Amperes g f s - Siemens 35 25 o 125 C 20 15 80 60 o TJ = 125 C 40 o 10 TJ = 25 C 20 5 0 0 0 5 10 15 20 25 30 35 40 45 50 0.2 0.4 0.6 0.8 I D - Amperes 1.2 1.4 1.6 Fig. 12. Capacitance Fig. 11. Gate Charge 10,000 10 9 VDS = 100V Capacitance - PicoFarads I D = 18A 8 I G = 10mA 7 VGS - Volts 1.0 VSD - Volts 6 5 4 3 2 C iss 1,000 100 C oss 10 C rss f = 1 MHz 1 0 1 0 2 4 6 8 10 12 14 16 18 20 22 QG - NanoCoulombs IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 100 VDS - Volts 1,000 IXFY36N20X3 Fig. 13. Output Capacitance Stored Energy IXFA36N20X3 IXFP36N20X3 Fig. 14. Forward-Bias Safe Operating Area 100 2.5 RDS(on) Limit 10 I D - Amperes EOSS - MicroJoules 2.0 1.5 1.0 100μs 1 o TJ = 150 C 0.5 o TC = 25 C Single Pulse 0.0 0 20 40 60 80 100 120 140 160 180 200 DC 0.1 1 10 100 1ms 10ms 1,000 VDS - Volts VDS - Volts Fig. 15. Maximum Transient Thermal Impedance 1 Z(th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width - Second © 2018 IXYS CORPORATION, All Rights Reserved IXYS REF: F_36N20X3(22-S202) 6-28-17 IXFY36N20X3 TO-252 AA Outline A A E b3 4 L3 TO-263 Outline E c2 C2 TO-220 Outline A E1 L1 A1 L4 1 2 A2 3 L1 e e1 e1 b2 L L2 c 0 5.55MIN OPTIONAL 1 1 - Gate 2,4 - Drain 3 - Source 2 L2 3 b2 A1 6.40 A1 H1 Q D2 D b L3 c e 0.43 [11.0] D1 e E1 0 2.85MIN 2.28 1.25MIN LAND PATTERN RECOMMENDATION IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.20 [5.0] 0.10 [2.5] A2 EJECTOR PIN 0.66 [16.6] A2 1 - Gate 2,4 - Drain 3 - Source 4 A oP 4 H 0.34 [8.7] 6.50MIN BOTTOM VIEW E D1 D H IXFA36N20X3 IXFP36N20X3 L1 L 0.12 [3.0] 0.06 [1.6] e c e1 3X b 3X b2 1 - Gate 2,4 - Drain 3 - Source Disclaimer Notice - Information furnished is believed to be accurate and reliable. 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